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Class Information
Number: 257/E29.065
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo) > Of charge coupled devices (epo)
Description: This subclass is indented under subclass E29.06. This subclass is substantially the same in scope as ECLA classification H01L29/10F3.










Patents under this class:

Patent Number Title Of Patent Date Issued
8574941 Method for manufacturing solid-state imaging device Nov. 5, 2013
8293561 Image pickup device and image pickup system Oct. 23, 2012
8173476 Image pickup device and image pickup system May. 8, 2012
8119436 Image sensor having optical waveguide structure and method for manufacturing the same Feb. 21, 2012
7897969 Solid-state image pickup device, driving method for solid-state image pickup device, and image pickup apparatus Mar. 1, 2011
7663175 Semiconductor integrated circuit device Feb. 16, 2010
7638823 Solid-state imaging device and method of manufacturing said solid-state imaging device Dec. 29, 2009
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
5270558 Integrated electronic shutter for charge-coupled devices Dec. 14, 1993
5168330 Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer Dec. 1, 1992
5103278 Charge transfer device achieving a high charge transfer efficiency by forming a potential well gradient under an output-gate area Apr. 7, 1992
4906584 Fast channel single phase buried channel CCD Mar. 6, 1990
4878102 Charge-coupled device Oct. 31, 1989
4809051 Vertical punch-through cell Feb. 28, 1989
4725872 Fast channel single phase buried channel CCD Feb. 16, 1988
4649408 Charge storage type semiconductor device and method for producing same Mar. 10, 1987
4277792 Piggyback readout stratified channel CCD Jul. 7, 1981
4271419 Serial readout stratified channel CCD Jun. 2, 1981
4208668 Charge coupled device with buried zones in a semiconductor substrate for use especially as a light sensor Jun. 17, 1980
4131810 Opto-electronic sensor Dec. 26, 1978
4110777 Charge-coupled device Aug. 29, 1978
4012759 Bulk channel charge transfer device Mar. 15, 1977











 
 
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