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Class Information
Number: 257/E29.063
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > With inactive supplementary region (e.g., for preventing punch-through, improving capacity effect or leakage current) (epo)
Description: This subclass is indented under subclass E29.062. This subclass is substantially the same in scope as ECLA classification H01L29/10F2B2.

Patents under this class:
1 2 3 4 5 6 7 8 9 10

Patent Number Title Of Patent Date Issued
8592923 Coupling well structure for improving HVMOS performance Nov. 26, 2013
8399953 Semiconductor device and method for manufacturing the same Mar. 19, 2013
8318570 Enhancing MOSFET performance by optimizing stress properties Nov. 27, 2012
8278719 Radiation hardened isolation structures and fabrication methods Oct. 2, 2012
8227871 Semiconductor device and method for manufacturing the same Jul. 24, 2012
8188523 Insulated gate field effect transistor and method of manufacturing same, and image pickup device and method of manufacturing same May. 29, 2012
8169028 Semiconductor device May. 1, 2012
8049295 Coupling well structure for improving HVMOS performance Nov. 1, 2011
7968400 Short channel LV, MV, and HV CMOS devices Jun. 28, 2011
7956419 Trench IGBT with depletion stop layer Jun. 7, 2011
7944017 Semiconductor device and manufacturing method of the same May. 17, 2011
7902606 Double gate depletion mode MOSFET Mar. 8, 2011
7880240 Semiconductor device Feb. 1, 2011
7851316 Fabrication method of semiconductor device Dec. 14, 2010
7829939 MOSFET including epitaxial halo region Nov. 9, 2010
7816734 Field-effect transistor including localized halo ion regions, and semiconductor memory, memory card, and system including the same Oct. 19, 2010
7718480 ESD clamps and NMOS arrays with increased electrical overstress robustness May. 18, 2010
7687354 Fabrication of a semiconductor device with stressor Mar. 30, 2010
7682888 Methods of forming NMOS/PMOS transistors with source/drains including strained materials Mar. 23, 2010
7683421 NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the same Mar. 23, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7615826 Electrostatic discharge protection semiconductor structure Nov. 10, 2009
7608515 Diffusion layer for stressed semiconductor devices Oct. 27, 2009
7602017 Short channel LV, MV, and HV CMOS devices Oct. 13, 2009
7598146 Self-aligned gate and method Oct. 6, 2009
7579658 Devices without current crowding effect at the finger's ends Aug. 25, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7521342 Semiconductor structure with high-voltage sustaining capability and fabrication method of the same Apr. 21, 2009
7432551 SOI semiconductor device including a guard ring region Oct. 7, 2008
7400016 Semiconductor device realizing characteristics like a SOI MOSFET Jul. 15, 2008
7279767 Semiconductor structure with high-voltage sustaining capability and fabrication method of the same Oct. 9, 2007
7071069 Shallow amorphizing implant for gettering of deep secondary end of range defects Jul. 4, 2006
7067406 Thermal conducting trench in a semiconductor structure and method for forming the same Jun. 27, 2006
7067878 Field effect transistor Jun. 27, 2006
7064039 Method to produce localized halo for MOS transistor Jun. 20, 2006
7064399 Advanced CMOS using super steep retrograde wells Jun. 20, 2006
7061059 Semiconductor device Jun. 13, 2006
7052965 Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patterns May. 30, 2006
7049669 LDMOS transistor May. 23, 2006
7042051 Semiconductor device including impurity layer having a plurality of impurity peaks formed beneath the channel region May. 9, 2006
7041549 Method for manufacturing semiconductor device May. 9, 2006
7038270 Nonvolatile memory device with a non-planar gate-insulating layer and method of fabricating the same May. 2, 2006
7009261 Semiconductor device and method of manufacturing the same Mar. 7, 2006
7009255 Semiconductor device having punch-through structure off-setting the edge of the gate electrodes Mar. 7, 2006
6998680 Semiconductor device Feb. 14, 2006
6989309 High voltage MOS transistor with up-retro well by providing dopant in an epitaxial layer Jan. 24, 2006
6972234 High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage Dec. 6, 2005
6972475 Semiconductor device Dec. 6, 2005
6946353 Low voltage high performance semiconductor devices and methods Sep. 20, 2005
6940137 Semiconductor device having an angled compensation implant and method of manufacture therefor Sep. 6, 2005

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