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Class Information
Number: 257/E29.062
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo)
Description: This subclass is indented under subclass E29.061. This subclass is substantially the same in scope as ECLA classification H01L29/10F2B.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.064 Characterized by contact structure of substrate region (epo) 216
257/E29.063 With inactive supplementary region (e.g., for preventing punch-through, improving capacity effect or leakage current) (epo) 493

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8575687 Semiconductor switch device Nov. 5, 2013
8344453 Method of manufacturing localized semiconductor-on-insulator (SOI) structures in a bulk semiconductor wafer Jan. 1, 2013
8299562 Isolation structure and device structure including the same Oct. 30, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8102001 Initial-on SCR device for on-chip ESD protection Jan. 24, 2012
8093664 Non-volatile semiconductor memory device and depletion-type MOS transistor Jan. 10, 2012
7906810 LDMOS device for ESD protection circuit Mar. 15, 2011
7838937 Circuits providing ESD protection to high voltage laterally diffused metal oxide semiconductor (LDMOS) transistors Nov. 23, 2010
7649223 Semiconductor device having superjunction structure and method for manufacturing the same Jan. 19, 2010
7459734 Method for manufacturing and structure for transistors with reduced gate to contact spacing Dec. 2, 2008
7061060 Offset-gate-type semiconductor device Jun. 13, 2006
7026214 Offset-gate-type semiconductor device Apr. 11, 2006
6979885 Devices with patterned wells and method for forming same Dec. 27, 2005
6946364 Integrated circuit having a device wafer with a diffused doped backside layer Sep. 20, 2005
6882009 Electrostatic discharge protection device and method of manufacturing the same Apr. 19, 2005
6867495 Integrated circuit having a device wafer with a diffused doped backside layer Mar. 15, 2005
6864535 Controllable semiconductor switching element that blocks in both directions Mar. 8, 2005
6853034 Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Feb. 8, 2005
6852585 Semiconductor circuit arrangement and a method for producing same Feb. 8, 2005
6806147 Method and apparatus for suppressing the channeling effect in high energy deep well implantation Oct. 19, 2004
6764909 Structure and method of MOS transistor having increased substrate resistance Jul. 20, 2004
6727558 Channel isolation using dielectric isolation structures Apr. 27, 2004
6627955 Structure and method of MOS transistor having increased substrate resistance Sep. 30, 2003
6624451 High frequency field effect transistor with carrier extraction to reduce intrinsic conduction Sep. 23, 2003
6555877 NMOSFET with negative voltage capability formed in P-type substrate and method of making the same Apr. 29, 2003
6555894 Device with patterned wells and method for forming same Apr. 29, 2003
6552389 Offset-gate-type semiconductor device Apr. 22, 2003
6507058 Low threshold compact MOS device with channel region formed by outdiffusion of two regions and method of making same Jan. 14, 2003
6486510 Reduction of reverse short channel effects by implantation of neutral dopants Nov. 26, 2002
6476412 Light emitting semiconductor device with partial reflection quantum-wave interference layers Nov. 5, 2002
6459141 Method and apparatus for suppressing the channeling effect in high energy deep well implantation Oct. 1, 2002
6459101 Semiconductor device Oct. 1, 2002
6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide Mar. 26, 2002
6358815 Semiconductor device and method of manufacturing the same Mar. 19, 2002
6352912 Reduction of reverse short channel effects by deep implantation of neutral dopants Mar. 5, 2002
6346463 Method for forming a semiconductor device with a tailored well profile Feb. 12, 2002
6335233 Method for fabricating MOS transistor Jan. 1, 2002
6316813 Semiconductor device with insulated gate transistor Nov. 13, 2001
6291859 Integrated circuits Sep. 18, 2001
6285072 Semiconductor device containing a porous structure and method of manufacturing the same Sep. 4, 2001
6285057 Semiconductor device combining a MOSFET structure and a vertical-channel trench-substrate field effect device Sep. 4, 2001
6271551 Si-Ge CMOS semiconductor device Aug. 7, 2001
6262457 Method of producing a transistor structure Jul. 17, 2001
6242783 Semiconductor device with insulated gate transistor Jun. 5, 2001
6213869 MOSFET-type device with higher driver current and lower steady state power dissipation Apr. 10, 2001
6204153 Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Mar. 20, 2001
6194776 Semiconductor circuit device having triple-well structure in semiconductor substrate, method of fabricating the same, and mask device for fabrication of the same Feb. 27, 2001
6188106 MOSFET having a highly doped channel liner and a dopant seal to provide enhanced device properties Feb. 13, 2001
6175123 Semiconductor devices with quantum-wave interference layers Jan. 16, 2001
6153920 Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby Nov. 28, 2000

1 2 3

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