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Class Information
Number: 257/E29.061
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo) > Of field-effect transistors (epo)
Description: This subclass is indented under subclass E29.06. This subclass is substantially the same in scope as ECLA classification H01L29/10F2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.062 With insulated gate (epo) 112


Patents under this class:
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Patent Number Title Of Patent Date Issued
RE44657 Semiconductor device Dec. 24, 2013
8288236 Field effect transistor having nanostructure channel Oct. 16, 2012
8203172 Nitride semiconductor device Jun. 19, 2012
7982249 Magnetic tunnel junction transistor Jul. 19, 2011
7709875 Memory cell comprising one MOS transistor with an isolated body having an improved read sensitivity May. 4, 2010
7176075 Field effect transistor and method of fabrication Feb. 13, 2007
6706574 Field effect transistor and method for making the same Mar. 16, 2004
6555915 Integrated circuit having interconnect to a substrate and method therefor Apr. 29, 2003
6476431 Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same Nov. 5, 2002
6458675 Semiconductor device having a plasma-processed layer and method of manufacturing the same Oct. 1, 2002
6414340 Field effect transistor and method for making the same Jul. 2, 2002
6355951 Field effect semiconductor device Mar. 12, 2002
6270573 Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate Aug. 7, 2001
6150680 Field effect semiconductor device having dipole barrier Nov. 21, 2000
6043518 Multiple-function GaAs transistors with very strong negative differential resistance phenomena Mar. 28, 2000
5942773 Field effect transistor with reduced delay variation Aug. 24, 1999
5905277 Field-effect transistor and method of manufacturing the same May. 18, 1999
5891757 Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer Apr. 6, 1999
5874772 Semiconductor device Feb. 23, 1999
5866925 Gallium nitride junction field-effect transistor Feb. 2, 1999
5833749 Compound semiconductor substrate and process of producing same Nov. 10, 1998
5804849 Compound semiconductor device and method of manufacture Sep. 8, 1998
5789286 Method of making a CMOS structure with FETS having isolated wells with merged depletions Aug. 4, 1998
5777353 Multiple-function gaas transistors with very strong negative differential resistance phenomena Jul. 7, 1998
5773853 Compound semiconductor device Jun. 30, 1998
5770868 GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets Jun. 23, 1998
5770513 Method for producing semiconductor device with heat dissipation structure Jun. 23, 1998
5747842 Epitaxial overgrowth method and devices May. 5, 1998
5742082 Stable FET with shielding region in the substrate Apr. 21, 1998
5739559 Compound semiconductor integrated circuit with a particular high resistance layer Apr. 14, 1998
5731619 CMOS structure with FETS having isolated wells with merged depletions and methods of making same Mar. 24, 1998
5689124 Semiconductor device Nov. 18, 1997
5672890 Field effect transistor with lightly doped drain regions Sep. 30, 1997
5639677 Method of making a gaAs power semiconductor device operating at a low voltage Jun. 17, 1997
5622891 Method of manufacturing semiconductor device with reduced side gate effect Apr. 22, 1997
5610085 Method of making a vertical FET using epitaxial overgrowth Mar. 11, 1997
5608253 Advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits Mar. 4, 1997
5594262 Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer Jan. 14, 1997
5559343 Semiconductor device with metallic precipitate and its manufacture Sep. 24, 1996
5554561 Epitaxial overgrowth method Sep. 10, 1996
5532507 MES field effect transistor possessing lightly doped drain Jul. 2, 1996
5473174 III-V compound semiconductor device formed on silicon substrate Dec. 5, 1995
5438212 Semiconductor device with heat dissipation structure Aug. 1, 1995
5430310 Field effect transistor Jul. 4, 1995
5428232 Field effect transistor apparatus Jun. 27, 1995
5413947 Method for manufacturing a semiconductor device with an epitaxial void May. 9, 1995
5411902 Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer May. 2, 1995
5411914 III-V based integrated circuits having low temperature growth buffer or passivation layers May. 2, 1995
5410167 Semiconductor device with reduced side gate effect Apr. 25, 1995
5332918 Ultra-high-speed photoconductive devices using semi-insulating layers Jul. 26, 1994

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