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Class Information
Number: 257/E29.06
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10F.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6906400 |
SiGe strain relaxed buffer for high mobility devices and a method of fabricating it |
Jun. 14, 2005 |
| 6072199 |
Insulated gate bipolar transistor |
Jun. 6, 2000 |
| 5912493 |
Enhanced oxidation for spacer formation integrated with LDD implantation |
Jun. 15, 1999 |
| 5306928 |
Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer |
Apr. 26, 1994 |
| 5241214 |
Oxides and nitrides of metastabale group IV alloys and nitrides of Group IV elements and semiconductor devices formed thereof |
Aug. 31, 1993 |
| 5144380 |
Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate |
Sep. 1, 1992 |
| 5110750 |
Semiconductor device and method of making the same |
May. 5, 1992 |
| 5077594 |
Integrated high voltage transistors having minimum transistor to transistor crosstalk |
Dec. 31, 1991 |
| 4895811 |
Method of manufacturing semiconductor device |
Jan. 23, 1990 |
| 4490182 |
Semiconductor processing technique for oxygen doping of silicon |
Dec. 25, 1984 |
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