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Class Information
Number: 257/E29.06
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Substrate region of field-effect devices (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10F.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.065 Of charge coupled devices (epo) 22
257/E29.061 Of field-effect transistors (epo) 97


Patents under this class:

Patent Number Title Of Patent Date Issued
RE44657 Semiconductor device Dec. 24, 2013
8598632 Integrated circuit having pitch reduced patterns relative to photoithography features Dec. 3, 2013
8482074 Semiconductor device manufacturing method and semiconductor device Jul. 9, 2013
8378422 Electrostatic discharge protection device comprising a plurality of highly doped areas within a well Feb. 19, 2013
8278715 Electrostatic discharge protection device Oct. 2, 2012
8203172 Nitride semiconductor device Jun. 19, 2012
8053859 Semiconductor device and the method of manufacturing the same Nov. 8, 2011
7767500 Superjunction device with improved ruggedness Aug. 3, 2010
7557010 Method to improve writer leakage in a SiGe bipolar device Jul. 7, 2009
6906400 SiGe strain relaxed buffer for high mobility devices and a method of fabricating it Jun. 14, 2005
6072199 Insulated gate bipolar transistor Jun. 6, 2000
5912493 Enhanced oxidation for spacer formation integrated with LDD implantation Jun. 15, 1999
5306928 Diamond semiconductor device having a non-doped diamond layer formed between a BN substrate and an active diamond layer Apr. 26, 1994
5241214 Oxides and nitrides of metastabale group IV alloys and nitrides of Group IV elements and semiconductor devices formed thereof Aug. 31, 1993
5144380 Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate Sep. 1, 1992
5110750 Semiconductor device and method of making the same May. 5, 1992
5077594 Integrated high voltage transistors having minimum transistor to transistor crosstalk Dec. 31, 1991
4895811 Method of manufacturing semiconductor device Jan. 23, 1990
4490182 Semiconductor processing technique for oxygen doping of silicon Dec. 25, 1984











 
 
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