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Class Information
Number: 257/E29.059
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Gate region of field-effect devices with pn junction gate (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10E.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8278691 Low power memory device with JFET device structures Oct. 2, 2012
8049223 Semiconductor device with large blocking voltage Nov. 1, 2011
7982249 Magnetic tunnel junction transistor Jul. 19, 2011
7943971 Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture May. 17, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7785973 Electronic device including a gate electrode having portions with different conductivity types and a process of forming the same Aug. 31, 2010
7776726 Semiconductor devices and methods of manufacture thereof Aug. 17, 2010
7491987 Junction field effect thin film transistor Feb. 17, 2009
7345326 Electric signal transmission line Mar. 18, 2008
7304335 Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performance a Dec. 4, 2007
7009229 Electrostatic discharge protection device for integrated circuits Mar. 7, 2006
6995052 Method and structure for double dose gate in a JFET Feb. 7, 2006
6917054 Semiconductor device Jul. 12, 2005
6878993 Self-aligned trench MOS junction field-effect transistor for high-frequency applications Apr. 12, 2005
6861303 JFET structure for integrated circuit and fabrication method Mar. 1, 2005
6777722 Method and structure for double dose gate in a JFET Aug. 17, 2004
6201269 Junction field effect transistor and method of producing the same Mar. 13, 2001
6034385 Current-limiting semiconductor configuration Mar. 7, 2000
6020607 Semiconductor device having junction field effect transistors Feb. 1, 2000
5907168 Low noise Ge-JFETs May. 25, 1999
5789771 Camel-gate field-effect transistor with multiple modulation-doped channels Aug. 4, 1998
5773891 Integrated circuit method for and structure with narrow line widths Jun. 30, 1998
5747842 Epitaxial overgrowth method and devices May. 5, 1998
5726469 Surface voltage sustaining structure for semiconductor devices Mar. 10, 1998
5661318 Junction type field-effect transistor Aug. 26, 1997
5639688 Method of making integrated circuit structure with narrow line widths Jun. 17, 1997
5610085 Method of making a vertical FET using epitaxial overgrowth Mar. 11, 1997
5585654 Field effect transistor having saturated drain current characteristic Dec. 17, 1996
5557119 Field effect transistor having unsaturated drain current characteristic Sep. 17, 1996
5554561 Epitaxial overgrowth method Sep. 10, 1996
5510632 Silicon carbide junction field effect transistor device for high temperature applications Apr. 23, 1996
5444281 Charge transfer device capable of suppressing reset noise Aug. 22, 1995
RE34821 High speed junction field effect transistor for use in bipolar integrated circuits Jan. 3, 1995
5378642 Method of making a silicon carbide junction field effect transistor device for high temperature applications Jan. 3, 1995
5359214 Field effect devices formed from porous semiconductor materials Oct. 25, 1994
5321283 High frequency JFET Jun. 14, 1994
5309007 Junction field effect transistor with lateral gate voltage swing (GVS-JFET) May. 3, 1994
5248626 Method for fabricating self-aligned gate diffused junction field effect transistor Sep. 28, 1993
5153695 Semiconductor gate-controlled high-power capability bipolar device Oct. 6, 1992
5036017 Method of making asymmetrical field effect transistor Jul. 30, 1991
5027180 Double gate static induction thyristor Jun. 25, 1991
5017991 Light quenchable thyristor device May. 21, 1991
5012305 High speed junction field effect transistor for use in bipolar integrated circuits Apr. 30, 1991
5011785 Insulator assisted self-aligned gate junction Apr. 30, 1991
5001535 Static induction type thyristor Mar. 19, 1991
4984049 Static induction thyristor Jan. 8, 1991
4975755 Optically controllable static induction thyristor device Dec. 4, 1990
4952990 Gate turn-off power semiconductor component Aug. 28, 1990
4935798 Static induction type thyristor Jun. 19, 1990
4903091 Heterojunction transistor having bipolar characteristics Feb. 20, 1990

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