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Class Information
Number: 257/E29.058
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of charge coupled devices (epo)
Description: This subclass is indented under subclass E29.049. This subclass is substantially the same in scope as ECLA classification H01L29/10D3.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7663175 Semiconductor integrated circuit device Feb. 16, 2010
7557390 Solid image capturing element for power saving at output section and manufacturing method for the same Jul. 7, 2009
6207981 Charge-coupled device with potential barrier and charge storage regions Mar. 27, 2001
5900654 Radiation hardened charge coupled device May. 4, 1999
5793070 Reduction of trapping effects in charge transfer devices Aug. 11, 1998
5760431 Multidirectional transfer charge-coupled device Jun. 2, 1998
5563404 Full frame CCD image sensor with altered accumulation potential Oct. 8, 1996
5556801 Method of making a planar charge coupled device with edge aligned implants and interconnected electrodes Sep. 17, 1996
5521405 Charge transfer device with two-phase two-layered electrode structure and method for fabricating the same May. 28, 1996
5477069 Charge transfer device and driving method for the same Dec. 19, 1995
5466621 Method of manufacturing a semiconductor device having silicon islands Nov. 14, 1995
5466621 Method of manufacturing a semiconductor device having silicon islands Nov. 14, 1995
5463232 Solid-state imaging device with internal smear eliminator Oct. 31, 1995
5448089 Charge-coupled device having an improved charge-transfer efficiency over a broad temperature range Sep. 5, 1995
5365093 Solid-state imaging device with tapered channel regions Nov. 15, 1994
5359213 Charge transfer device and solid state image sensor using the same Oct. 25, 1994
5346834 Method for manufacturing a semiconductor device and a semiconductor memory device Sep. 13, 1994
5345099 Semiconductor device Sep. 6, 1994
5309005 Charge transfer device having a bent transfer channel May. 3, 1994
5302543 Method of making a charge coupled device Apr. 12, 1994
5292680 Method of forming a convex charge coupled device Mar. 8, 1994
5241199 Charge coupled device (CCD) having high transfer efficiency at low temperature operation Aug. 31, 1993
5189498 Charge coupled device Feb. 23, 1993
5115289 Semiconductor device and semiconductor memory device May. 19, 1992
5065203 Trench structured charge-coupled device Nov. 12, 1991
5024963 Method of fabricating a BCCD channel with stair-case doping by self-alignment Jun. 18, 1991
4967250 Charge-coupled device with focused ion beam fabrication Oct. 30, 1990
4965648 Tilted channel, serial-parallel-serial, charge-coupled device Oct. 23, 1990
4952523 Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface Aug. 28, 1990
4903097 CCD read only memory Feb. 20, 1990
4901125 Charge coupled device capable of efficiently transferring charge Feb. 13, 1990
4872043 Charge coupled device with reduced surface state at semiconductor-insulator interface Oct. 3, 1989
4857979 Platinum silicide imager Aug. 15, 1989
4812887 Charge-coupled device Mar. 14, 1989
4809048 Charge-coupled device having channel region with alternately changing potential in a direction perpendicular to charge transfer Feb. 28, 1989
4807005 Semiconductor device Feb. 21, 1989
4806498 Semiconductor charge-coupled device and process of fabrication thereof Feb. 21, 1989
4782374 Charge transfer device having a width changing channel Nov. 1, 1988
4742381 Semiconductor charge-coupled device with an increased surface state May. 3, 1988
4733407 Charge-coupled device Mar. 22, 1988
4728622 Charge transfer device having a width changing channel Mar. 1, 1988
4724470 Image sensor device having separate photosensor and charge storage Feb. 9, 1988
4721989 CCD with transfer channel at lower potential than supply channel Jan. 26, 1988
4672645 Charge transfer device having an improved read-out portion Jun. 9, 1987
4639940 Charge coupled device with meander channel and elongated, straight, parallel gate electrodes Jan. 27, 1987
4613895 Color responsive imaging device employing wavelength dependent semiconductor optical absorption Sep. 23, 1986
4601098 Method of manufacturing plural active regions followed by a chain step formation Jul. 22, 1986
4594604 Charge coupled device with structures for forward scuppering to reduce noise Jun. 10, 1986
4592130 Method of fabricating a CCD read only memory utilizing dual-level junction formation Jun. 3, 1986
4574295 Charge coupled device having meandering channels Mar. 4, 1986

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