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Class Information
Number: 257/E29.057
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With pn junction gate
Description: This subclass is indented under subclass E29.05. This subclass is substantially the same in scope as ECLA classification H01L29/10D2C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8278691 Low power memory device with JFET device structures Oct. 2, 2012
7943971 Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture May. 17, 2011
7785973 Electronic device including a gate electrode having portions with different conductivity types and a process of forming the same Aug. 31, 2010
7705367 Pinned photodiode sensor with gate-controlled silicon-controlled rectifier transfer switch and method of formation Apr. 27, 2010
7525138 JFET device with improved off-state leakage current and method of fabrication Apr. 28, 2009
7491987 Junction field effect thin film transistor Feb. 17, 2009
6909125 Implant-controlled-channel vertical JFET Jun. 21, 2005
6404015 Semiconductor device Jun. 11, 2002
5945699 Reduce width, differentially doped vertical JFET device Aug. 31, 1999
5824575 Semiconductor device and method of manufacturing the same Oct. 20, 1998
5789771 Camel-gate field-effect transistor with multiple modulation-doped channels Aug. 4, 1998
5714777 Si/SiGe vertical junction field effect transistor Feb. 3, 1998
5639688 Method of making integrated circuit structure with narrow line widths Jun. 17, 1997
5536953 Wide bandgap semiconductor device including lightly doped active region Jul. 16, 1996
5432377 Dielectrically isolated semiconductor device and a method for its manufacture Jul. 11, 1995
5428234 Semiconductor device Jun. 27, 1995
5393998 Semiconductor memory device containing junction field effect transistor Feb. 28, 1995
5309007 Junction field effect transistor with lateral gate voltage swing (GVS-JFET) May. 3, 1994
4959697 Short channel junction field effect transistor Sep. 25, 1990
H368 Field-effect transistor Nov. 3, 1987
4698653 Semiconductor devices controlled by depletion regions Oct. 6, 1987
4670764 Multi-channel power JFET with buried field shaping regions Jun. 2, 1987
4635084 Split row power JFET Jan. 6, 1987
4633281 Dual stack power JFET with buried field shaping depletion regions Dec. 30, 1986
4596068 Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface Jun. 24, 1986
4477963 Method of fabrication of a low capacitance self-aligned semiconductor electrode structure Oct. 23, 1984
4449284 Method of manufacturing an integrated circuit device having vertical field effect transistors May. 22, 1984
4393575 Process for manufacturing a JFET with an ion implanted stabilization layer Jul. 19, 1983
4306246 Method for trimming active semiconductor devices Dec. 15, 1981
4262296 Vertical field effect transistor with improved gate and channel structure Apr. 14, 1981
4242692 Charge transfer device which has a pair of straight portions joined by a direction changing portion Dec. 30, 1980
4216490 Static induction transistor Aug. 5, 1980
4209795 Jsit-type field effect transistor with deep level channel doping Jun. 24, 1980
4152714 Semiconductor apparatus May. 1, 1979
4148047 Semiconductor apparatus Apr. 3, 1979
4143386 Junction type field effect transistor Mar. 6, 1979
4049476 Method of manufacturing a semiconductor integrated circuit device which includes at least one V-groove jfet and one bipolar transistor Sep. 20, 1977











 
 
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