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Class Information
Number: 257/E29.056
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > With variation of composition of channel (epo)
Description: This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B4.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
6743680 Process for manufacturing transistors having silicon/germanium channel regions Jun. 1, 2004
6744083 Submicron MOSFET having asymmetric channel profile Jun. 1, 2004
6734072 Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure May. 11, 2004
6730576 Method of forming a thick strained silicon layer and semiconductor structures incorporating a thick strained silicon layer May. 4, 2004
6727136 Formation of ultra-shallow depth source/drain extensions for MOS transistors Apr. 27, 2004
6727550 Integrated circuit device Apr. 27, 2004
6723661 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6724660 Integrated semiconductor memory device having quantum well buried in a substrate Apr. 20, 2004
6723621 Abrupt delta-like doping in Si and SiGe films by UHV-CVD Apr. 20, 2004
6724008 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Apr. 20, 2004
6713779 Semiconductor device and method of manufacturing the same Mar. 30, 2004
6709935 Method of locally forming a silicon/geranium channel layer Mar. 23, 2004
6707062 Transistor in a semiconductor device with an elevated channel and a source drain Mar. 16, 2004
6703688 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Mar. 9, 2004
6703648 Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication Mar. 9, 2004
6703271 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer Mar. 9, 2004
6699764 Method for amorphization re-crystallization of Si1-xGex films on silicon substrates Mar. 2, 2004
6690043 Semiconductor device and method of manufacturing the same Feb. 10, 2004
6677192 Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits Jan. 13, 2004
6657223 Strained silicon MOSFET having silicon source/drain regions and method for its fabrication Dec. 2, 2003
6645836 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon Nov. 11, 2003
6646322 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Nov. 11, 2003
6642106 Method for increasing core gain in flash memory device using strained silicon Nov. 4, 2003
6635909 Strained fin FETs structure and method Oct. 21, 2003
6633066 CMOS integrated circuit devices and substrates having unstrained silicon active layers Oct. 14, 2003
6630710 Elevated channel MOSFET Oct. 7, 2003
6627515 Method of fabricating a non-floating body device with enhanced performance Sep. 30, 2003
6627522 Method for enhancing the solubility of dopants in silicon Sep. 30, 2003
6621131 Semiconductor transistor having a stressed channel Sep. 16, 2003
6617228 Semiconductor material and method for enhancing solubility of a dopant therein Sep. 9, 2003
6605498 Semiconductor transistor having a backfilled channel material Aug. 12, 2003
6597016 Semiconductor device and method for fabricating the same Jul. 22, 2003
6593191 Buried channel strained silicon FET using a supply layer created through ion implantation Jul. 15, 2003
6593641 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Jul. 15, 2003
6583015 Gate technology for strained surface channel and strained buried channel MOSFET devices Jun. 24, 2003
6566734 Semiconductor device May. 20, 2003
6562703 Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content May. 13, 2003
6563152 Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel May. 13, 2003
6555839 Buried channel strained silicon FET using a supply layer created through ion implantation Apr. 29, 2003
6544854 Silicon germanium CMOS channel Apr. 8, 2003
6525338 Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor Feb. 25, 2003
6518134 Method for fabricating a semiconductor device with an air tunnel formed in the lower part of a transistor channel Feb. 11, 2003
6507091 Transistor with indium-implanted SiGe alloy and processes for fabricating the same Jan. 14, 2003
6503833 Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby Jan. 7, 2003
6498078 Method for enhancing the solubility of boron and indium in silicon Dec. 24, 2002
6492216 Method of forming a transistor with a strained channel Dec. 10, 2002
6486510 Reduction of reverse short channel effects by implantation of neutral dopants Nov. 26, 2002
6486520 Structure and method for a large-permittivity gate using a germanium layer Nov. 26, 2002
6476412 Light emitting semiconductor device with partial reflection quantum-wave interference layers Nov. 5, 2002
6472685 Semiconductor device Oct. 29, 2002

1 2 3 4 5 6










 
 
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