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Class Information
Number: 257/E29.056
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > With variation of composition of channel (epo)
Description: This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B4.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8618543 Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor Dec. 31, 2013
8482043 Method for improving transistor performance through reducing the salicide interface resistance Jul. 9, 2013
8350269 Semiconductor-on-insulator (SOI) structure and method of forming the SOI structure using a bulk semiconductor starting wafer Jan. 8, 2013
8106424 Field effect transistor with a heterostructure Jan. 31, 2012
8026565 Thin film semiconductor device comprising nanocrystalline silicon powder Sep. 27, 2011
8026535 Thin film transistor and organic electroluminescence display using the same Sep. 27, 2011
8013424 Semiconductor device and method of fabricating the same Sep. 6, 2011
7872303 FinFET with longitudinal stress in a channel Jan. 18, 2011
7816664 Defect reduction by oxidation of silicon Oct. 19, 2010
7785993 Method of growing a strained layer Aug. 31, 2010
7781827 Semiconductor device with a vertical MOSFET including a superlattice and related methods Aug. 24, 2010
7652320 Non-volatile memory device having improved band-to-band tunneling induced hot electron injection efficiency and manufacturing method thereof Jan. 26, 2010
7612366 Semiconductor device including a strained superlattice layer above a stress layer Nov. 3, 2009
7586137 Non-volatile memory device and method of fabricating the same Sep. 8, 2009
7557002 Methods of forming transistor devices Jul. 7, 2009
7537985 Double gate isolation May. 26, 2009
7534685 Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor May. 19, 2009
7534689 Stress enhanced MOS transistor and methods for its fabrication May. 19, 2009
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same May. 12, 2009
7507988 Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer Mar. 24, 2009
7491612 Field effect transistor with a heterostructure and associated production method Feb. 17, 2009
7211869 Increasing carrier mobility in NFET and PFET transistors on a common wafer May. 1, 2007
7074655 Gate material for semiconductor device fabrication Jul. 11, 2006
7071065 Strained silicon PMOS having silicon germanium source/drain extensions and method for its fabrication Jul. 4, 2006
7071119 Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Jul. 4, 2006
7067855 Semiconductor structure having an abrupt doping profile Jun. 27, 2006
7060597 Manufacturing method for a silicon substrate having strained layer Jun. 13, 2006
7056789 Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor Jun. 6, 2006
7057216 High mobility heterojunction complementary field effect transistors and methods thereof Jun. 6, 2006
7053400 Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility May. 30, 2006
7049198 Semiconductor device and method for fabricating the same May. 23, 2006
7049898 Strained-silicon voltage controlled oscillator (VCO) May. 23, 2006
7045836 Semiconductor structure having a strained region and a method of fabricating same May. 16, 2006
7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction May. 16, 2006
7045377 Method for making a semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction May. 16, 2006
7045401 Strained silicon finFET device May. 16, 2006
7033437 Method for making semiconductor device including band-engineered superlattice Apr. 25, 2006
7034362 Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures Apr. 25, 2006
7034329 Semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure Apr. 25, 2006
7033913 Semiconductor device and method of manufacturing the same Apr. 25, 2006
7030465 Semiconductor device that can increase the carrier mobility and method for fabricating the same Apr. 18, 2006
7029964 Method of manufacturing a strained silicon on a SiGe on SOI substrate Apr. 18, 2006
7029988 Fabrication method and device structure of shallow trench insulation for silicon wafer containing silicon-germanium Apr. 18, 2006
7022593 SiGe rectification process Apr. 4, 2006
7022530 Semiconductor device and method for fabricating the same Apr. 4, 2006
7019326 Transistor with strain-inducing structure in channel Mar. 28, 2006
7018900 Method for making a semiconductor device comprising a superlattice channel vertically stepped above source and drain regions Mar. 28, 2006
7015517 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same Mar. 21, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006
7009200 Field effect transistor Mar. 7, 2006

1 2 3 4 5 6










 
 
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