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Class Information
Number: 257/E29.055
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > With vertical doping variation (epo)
Description: This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B3.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8476718 Semiconductor device including a gate insulating film having a metal oxide layer having trap levels Jul. 2, 2013
8207579 Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same Jun. 26, 2012
8169039 Semiconductor device May. 1, 2012
7999309 Semiconductor device Aug. 16, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7671384 Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a Mar. 2, 2010
7598146 Self-aligned gate and method Oct. 6, 2009
7064399 Advanced CMOS using super steep retrograde wells Jun. 20, 2006
7018885 Method of manufacturing semiconductor devices Mar. 28, 2006
7009255 Semiconductor device having punch-through structure off-setting the edge of the gate electrodes Mar. 7, 2006
6995397 Semiconductor device Feb. 7, 2006
6949787 Transistor having high dielectric constant gate insulating layer and source and drain forming Schottky contact with substrate Sep. 27, 2005
6946337 Method of manufacturing semiconductor devices Sep. 20, 2005
6884686 Method of manufacturing and structure of semiconductor device with floating ring structure Apr. 26, 2005
6869848 Method of manufacturing flash memory device Mar. 22, 2005
6864507 MISFET Mar. 8, 2005
6855984 Process to reduce gate edge drain leakage in semiconductor devices Feb. 15, 2005
6815284 Manufacturing method of semiconductor device Nov. 9, 2004
6800529 Method for fabricating semiconductor transistor device Oct. 5, 2004
6797576 Fabrication of p-channel field-effect transistor for reducing junction capacitance Sep. 28, 2004
6784492 Semiconductor device including a gate-insulated transistor Aug. 31, 2004
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Aug. 31, 2004
6770944 Semiconductor device having counter and channel impurity regions Aug. 3, 2004
6753230 Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping Jun. 22, 2004
6747319 Semiconductor device and method of fabricating the same Jun. 8, 2004
6713812 Non-volatile memory device having an anti-punch through (APT) region Mar. 30, 2004
6673663 Methods of forming field effect transistors and related field effect transistor constructions Jan. 6, 2004
6670685 Method of manufacturing and structure of semiconductor device with floating ring structure Dec. 30, 2003
6667522 Silicon wafers for CMOS and other integrated circuits Dec. 23, 2003
6667200 Method for forming transistor of semiconductor device Dec. 23, 2003
6656800 Method of manufacturing semiconductor device including process for implanting impurities into substrate via MOS transistor gate electrode and gate insulation film Dec. 2, 2003
6639273 Silicon carbide n channel MOS semiconductor device and method for manufacturing the same Oct. 28, 2003
6624451 High frequency field effect transistor with carrier extraction to reduce intrinsic conduction Sep. 23, 2003
6617653 MISFET Sep. 9, 2003
6599804 Fabrication of field-effect transistor for alleviating short-channel effects Jul. 29, 2003
6566696 Self-aligned VT implant May. 20, 2003
6548842 Field-effect transistor for alleviating short-channel effects Apr. 15, 2003
6541829 Semiconductor device and method of manufacturing the same Apr. 1, 2003
6506640 Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through Jan. 14, 2003
6503805 Channel implant through gate polysilicon Jan. 7, 2003
6498077 Semiconductor device and method of manufacturing same Dec. 24, 2002
6495891 Transistor having impurity concentration distribution capable of improving short channel effect Dec. 17, 2002
6486510 Reduction of reverse short channel effects by implantation of neutral dopants Nov. 26, 2002
6482691 Seismic imaging using omni-azimuth seismic energy sources and directional sensing Nov. 19, 2002
6475852 Method of forming field effect transistors and related field effect transistor constructions Nov. 5, 2002
6472260 Methods of forming field effect transistors and related field effect transistor constructions Oct. 29, 2002
6461920 Semiconductor device and method of manufacturing the same Oct. 8, 2002
6444550 Laser tailoring retrograde channel profile in surfaces Sep. 3, 2002
6423615 Silicon wafers for CMOS and other integrated circuits Jul. 23, 2002

1 2 3

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