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Class Information
Number: 257/E29.054
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > With nonuniform doping structure in channel region surface (epo) > Doping structure being parallel to channel length (epo)
Description: This subclass is indented under subclass E29.053. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B2B.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8704332 Metal oxide semiconductor field effect transistor (MOSFET) gate termination Apr. 22, 2014
8629028 Metal oxide semiconductor field effect transistor (MOSFET) gate termination Jan. 14, 2014
8569764 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same Oct. 29, 2013
7952149 Anti-halo compensation May. 31, 2011
7892927 Transistor with a channel comprising germanium Feb. 22, 2011
7880202 Modulated-Vt transistor Feb. 1, 2011
7732286 Buried biasing wells in FETs (Field Effect Transistors) Jun. 8, 2010
7727838 Method to improve transistor Tox using high-angle implants with no additional masks Jun. 1, 2010
7682888 Methods of forming NMOS/PMOS transistors with source/drains including strained materials Mar. 23, 2010
7671358 Plasma implantated impurities in junction region recesses Mar. 2, 2010
7074681 Semiconductor component and method of manufacturing Jul. 11, 2006
7067876 Semiconductor device Jun. 27, 2006
7064399 Advanced CMOS using super steep retrograde wells Jun. 20, 2006
7060572 MOSFET with short channel structure and formation method thereof Jun. 13, 2006
7053450 Semiconductor device and method for fabricating the same May. 30, 2006
7049188 Lateral doped channel May. 23, 2006
7045412 Field-effect type semiconductor device for power amplifier May. 16, 2006
7019361 Semiconductor device and method of fabricating the same Mar. 28, 2006
7009255 Semiconductor device having punch-through structure off-setting the edge of the gate electrodes Mar. 7, 2006
6958514 Semiconductor device and method of fabricating the same Oct. 25, 2005
6943400 Semiconductor device and its manufacturing method Sep. 13, 2005
6940135 Mask-ROM process and device to prevent punch through using a halo implant process Sep. 6, 2005
6911701 Metal oxide semiconductor transistor Jun. 28, 2005
6908859 Low leakage power transistor and method of forming Jun. 21, 2005
6891235 FET with T-shaped gate May. 10, 2005
6876208 Semiconductor device and method of checking semiconductor storage device Apr. 5, 2005
6861689 One transistor DRAM cell structure and method for forming Mar. 1, 2005
6855984 Process to reduce gate edge drain leakage in semiconductor devices Feb. 15, 2005
6853040 MOS transistor and fabrication method thereof Feb. 8, 2005
6833307 Method for manufacturing a semiconductor component having an early halo implant Dec. 21, 2004
6828605 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component Dec. 7, 2004
6815284 Manufacturing method of semiconductor device Nov. 9, 2004
6815707 Field-effect type semiconductor device for power amplifier Nov. 9, 2004
6797576 Fabrication of p-channel field-effect transistor for reducing junction capacitance Sep. 28, 2004
6794722 Field effect transistor with reverse dopant grandient region Sep. 21, 2004
6784493 Line self protecting multiple output power IC architecture Aug. 31, 2004
6770935 Array of transistors with low voltage collector protection Aug. 3, 2004
6756276 Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication Jun. 29, 2004
6753575 Tank-isolated-drain-extended power device Jun. 22, 2004
6746926 MOS transistor with highly localized super halo implant Jun. 8, 2004
6727127 Laterally diffused MOS transistor (LDMOS) and method of making same Apr. 27, 2004
6727149 Method of making a hybrid SOI device that suppresses floating body effects Apr. 27, 2004
6710427 Distributed power device with dual function minority carrier reduction Mar. 23, 2004
6709900 Method of fabricating integrated system on a chip protection circuit Mar. 23, 2004
6690060 Field effect transistor and method of fabricating the same by controlling distribution condition of impurity region with implantation of additional ion Feb. 10, 2004
6673663 Methods of forming field effect transistors and related field effect transistor constructions Jan. 6, 2004
6653686 Structure and method of controlling short-channel effect of very short channel MOSFET Nov. 25, 2003
6642599 Semiconductor device and method of manufacturing the same Nov. 4, 2003
6638801 Semiconductor device and its manufacturing method Oct. 28, 2003
6624455 Semiconductor device and method of manufacturing the same including drain pinned along channel width Sep. 23, 2003

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