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Class Information
Number: 257/E29.052
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > Nonplanar channel (epo)
Description: This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B1.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7388258 |
Sectional field effect devices |
Jun. 17, 2008 |
| 7041575 |
Localized strained semiconductor on insulator |
May. 9, 2006 |
| 7023051 |
Localized strained semiconductor on insulator |
Apr. 4, 2006 |
| 7009200 |
Field effect transistor |
Mar. 7, 2006 |
| 7005334 |
Zero threshold voltage pFET and method of making same |
Feb. 28, 2006 |
| 6884677 |
Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same |
Apr. 26, 2005 |
| 6864520 |
Germanium field effect transistor and method of fabricating the same |
Mar. 8, 2005 |
| 6853031 |
Structure of a trapezoid-triple-gate FET |
Feb. 8, 2005 |
| 6825530 |
Zero Threshold Voltage pFET and method of making same |
Nov. 30, 2004 |
| 6798019 |
IGBT with channel resistors |
Sep. 28, 2004 |
| 6797569 |
Method for low topography semiconductor device formation |
Sep. 28, 2004 |
| 6784515 |
Semiconductor integrated circuit device |
Aug. 31, 2004 |
| 6686245 |
Vertical MOSFET with asymmetric gate structure |
Feb. 3, 2004 |
| 6656845 |
Method for forming semiconductor substrate with convex shaped active region |
Dec. 2, 2003 |
| 6624486 |
Method for low topography semiconductor device formation |
Sep. 23, 2003 |
| 6593174 |
Field effect transistor having dielectrically isolated sources and drains and method for making same |
Jul. 15, 2003 |
| 6589831 |
Transistor structure using epitaxial layers and manufacturing method thereof |
Jul. 8, 2003 |
| 6570239 |
Semiconductor device having resistive element |
May. 27, 2003 |
| 6570200 |
Transistor structure using epitaxial layers and manufacturing method thereof |
May. 27, 2003 |
| 6559518 |
MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device |
May. 6, 2003 |
| 6420764 |
Field effect transitor having dielectrically isolated sources and drains and methods for making same |
Jul. 16, 2002 |
| 6404015 |
Semiconductor device |
Jun. 11, 2002 |
| 6291353 |
Lateral patterning |
Sep. 18, 2001 |
| 6274431 |
Method for manufacturing an integrated circuit arrangement having at least one MOS transistor |
Aug. 14, 2001 |
| 6229188 |
MOS field effect transistor and its manufacturing method |
May. 8, 2001 |
| 6150693 |
Short channel non-self aligned VMOS field effect transistor |
Nov. 21, 2000 |
| 6127230 |
Vertical semiconductor device and method of manufacturing the same |
Oct. 3, 2000 |
| 6066876 |
Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout |
May. 23, 2000 |
| 6060362 |
Methods of fabricating field effect transistors including side branch grooves |
May. 9, 2000 |
| 6057558 |
Silicon carbide semiconductor device and manufacturing method thereof |
May. 2, 2000 |
| 5969393 |
Semiconductor device and method of manufacture of the same |
Oct. 19, 1999 |
| 5923985 |
MOS field effect transistor and its manufacturing method |
Jul. 13, 1999 |
| 5886389 |
Field-effect transistor and method for producing the same |
Mar. 23, 1999 |
| 5883411 |
Vertical insulated gate FET |
Mar. 16, 1999 |
| 5872374 |
Vertical semiconductor device |
Feb. 16, 1999 |
| 5850093 |
Uni-directional flash device |
Dec. 15, 1998 |
| 5843826 |
Deep submicron MOSFET device |
Dec. 1, 1998 |
| 5804863 |
Field effect transistors including side branch grooves and fabrication methods therefor |
Sep. 8, 1998 |
| 5773328 |
Method of making a fully-dielectric-isolated fet |
Jun. 30, 1998 |
| 5733810 |
Method of manufacturing MOS type semiconductor device of vertical structure |
Mar. 31, 1998 |
| 5668025 |
Method of making a FET with dielectrically isolated sources and drains |
Sep. 16, 1997 |
| 5665990 |
Metal oxide semiconductor device with self-aligned groove channel and method for manufacturing the same |
Sep. 9, 1997 |
| 5593928 |
Method of making a semiconductor device having floating source and drain regions |
Jan. 14, 1997 |
| 5578508 |
Vertical power MOSFET and process of fabricating the same |
Nov. 26, 1996 |
| 5545586 |
Method of making a transistor having easily controllable impurity profile |
Aug. 13, 1996 |
| 5512517 |
Self-aligned gate sidewall spacer in a corrugated FET and method of making same |
Apr. 30, 1996 |
| 5502322 |
Transistor having a nonuniform doping channel |
Mar. 26, 1996 |
| 5404038 |
Semiconductor device and manufacturing method thereof |
Apr. 4, 1995 |
| 5382814 |
Semiconductor device with low thermally generated leakage current |
Jan. 17, 1995 |
| 5376570 |
Transistor having a nonuniform doping channel and method for fabricating the same |
Dec. 27, 1994 |
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