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Class Information
Number: 257/E29.052
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo) > Nonplanar channel (epo)
Description: This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B1.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8648445 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same Feb. 11, 2014
8643087 Reduced leakage memory cells Feb. 4, 2014
8471344 Integrated circuit device with series-connected fin-type field effect transistors and integrated voltage equalization and method of forming the device Jun. 25, 2013
8263446 Asymmetric FinFET devices Sep. 11, 2012
8153492 Self-aligned V-channel MOSFET Apr. 10, 2012
8154082 Semiconductor device and manufacturing method thereof Apr. 10, 2012
8115259 Three-dimensional memory device Feb. 14, 2012
8058692 Multiple-gate transistors with reverse T-shaped fins Nov. 15, 2011
8039889 Non-volatile memory devices including stepped source regions and methods of fabricating the same Oct. 18, 2011
7875951 Semiconductor with active component and method for manufacture Jan. 25, 2011
7804130 Self-aligned V-channel MOSFET Sep. 28, 2010
7804127 Semiconductor non-volatile memory having semiconductor non-volatile memory cell with electric charge accumulation layer, and method of producing the same Sep. 28, 2010
7772622 Field effect transistor and manufacturing method thereof Aug. 10, 2010
7709850 Pixel structure and fabrication method thereof May. 4, 2010
7705401 Semiconductor device including a fin-channel recess-gate MISFET Apr. 27, 2010
7649228 Forming floating body RAM using bulk silicon substrate Jan. 19, 2010
7632745 Hybrid high-k gate dielectric film Dec. 15, 2009
7388258 Sectional field effect devices Jun. 17, 2008
7041575 Localized strained semiconductor on insulator May. 9, 2006
7023051 Localized strained semiconductor on insulator Apr. 4, 2006
7009200 Field effect transistor Mar. 7, 2006
7005334 Zero threshold voltage pFET and method of making same Feb. 28, 2006
6884677 Recessed gate electrode MOS transistors having a substantially uniform channel length across a width of the recessed gate electrode and methods of forming same Apr. 26, 2005
6864520 Germanium field effect transistor and method of fabricating the same Mar. 8, 2005
6853031 Structure of a trapezoid-triple-gate FET Feb. 8, 2005
6825530 Zero Threshold Voltage pFET and method of making same Nov. 30, 2004
6797569 Method for low topography semiconductor device formation Sep. 28, 2004
6798019 IGBT with channel resistors Sep. 28, 2004
6784515 Semiconductor integrated circuit device Aug. 31, 2004
6686245 Vertical MOSFET with asymmetric gate structure Feb. 3, 2004
6656845 Method for forming semiconductor substrate with convex shaped active region Dec. 2, 2003
6624486 Method for low topography semiconductor device formation Sep. 23, 2003
6593174 Field effect transistor having dielectrically isolated sources and drains and method for making same Jul. 15, 2003
6589831 Transistor structure using epitaxial layers and manufacturing method thereof Jul. 8, 2003
6570239 Semiconductor device having resistive element May. 27, 2003
6570200 Transistor structure using epitaxial layers and manufacturing method thereof May. 27, 2003
6559518 MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device May. 6, 2003
6420764 Field effect transitor having dielectrically isolated sources and drains and methods for making same Jul. 16, 2002
6404015 Semiconductor device Jun. 11, 2002
6291353 Lateral patterning Sep. 18, 2001
6274431 Method for manufacturing an integrated circuit arrangement having at least one MOS transistor Aug. 14, 2001
6229188 MOS field effect transistor and its manufacturing method May. 8, 2001
6150693 Short channel non-self aligned VMOS field effect transistor Nov. 21, 2000
6127230 Vertical semiconductor device and method of manufacturing the same Oct. 3, 2000
6066876 Integrated circuit arrangement having at least one MOS transistor manufactured by use of a planar transistor layout May. 23, 2000
6060362 Methods of fabricating field effect transistors including side branch grooves May. 9, 2000
6057558 Silicon carbide semiconductor device and manufacturing method thereof May. 2, 2000
5969393 Semiconductor device and method of manufacture of the same Oct. 19, 1999
5923985 MOS field effect transistor and its manufacturing method Jul. 13, 1999
5886389 Field-effect transistor and method for producing the same Mar. 23, 1999

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