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Class Information
Number: 257/E29.051
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo) > With insulated gate (epo)
Description: This subclass is indented under subclass E29.05. This subclass is substantially the same in scope as ECLA classification H01L29//10D2B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.052 Nonplanar channel (epo) 74
257/E29.053 With nonuniform doping structure in channel region surface (epo) 68
257/E29.056 With variation of composition of channel (epo) 251
257/E29.055 With vertical doping variation (epo) 134


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8680624 Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devices Mar. 25, 2014
8642430 Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers Feb. 4, 2014
8304307 Method of fabricating different gate oxides for different transistors in an integrated circuit Nov. 6, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8102006 Different gate oxides thicknesses for different transistors in an integrated circuit Jan. 24, 2012
7989856 Fin transistor Aug. 2, 2011
7948033 Semiconductor device having trench edge termination structure May. 24, 2011
7851316 Fabrication method of semiconductor device Dec. 14, 2010
7838933 Printing method for high performance electronic devices Nov. 23, 2010
7804139 Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench Sep. 28, 2010
7682888 Methods of forming NMOS/PMOS transistors with source/drains including strained materials Mar. 23, 2010
7190032 Insulated gate transistor Mar. 13, 2007
7057242 Transistor structures having access gates with narrowed central portions Jun. 6, 2006
7009263 Field-effect transistor Mar. 7, 2006
7005335 Array of nanoscopic mosfet transistors and fabrication methods Feb. 28, 2006
6989558 Field effect transistor Jan. 24, 2006
6960499 Dual-counterdoped channel field effect transistor and method Nov. 1, 2005
6929989 Semiconductor device and manufacturing method thereof Aug. 16, 2005
6887798 STI stress modification by nitrogen plasma treatment for improving performance in small width devices May. 3, 2005
6888207 High voltage transistors with graded extension May. 3, 2005
6881987 pMOS device having ultra shallow super-steep-retrograde epi-channel with dual channel doping and method for fabricating the same Apr. 19, 2005
6878995 Cmos-compatible lateral dmos transistor and method for producing such a transistor Apr. 12, 2005
6867085 Insulated gate semiconductor device and method of manufacturing the same Mar. 15, 2005
6864535 Controllable semiconductor switching element that blocks in both directions Mar. 8, 2005
6841440 Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same Jan. 11, 2005
6797555 Direct implantation of fluorine into the channel region of a PMOS device Sep. 28, 2004
6798019 IGBT with channel resistors Sep. 28, 2004
6784492 Semiconductor device including a gate-insulated transistor Aug. 31, 2004
6784059 Semiconductor device and method of manufacturing thereof Aug. 31, 2004
6780730 Reduction of negative bias temperature instability in narrow width PMOS using F2 implantation Aug. 24, 2004
6776841 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer Aug. 17, 2004
6770550 Semiconductor device manufacturing method Aug. 3, 2004
6767808 Method for fabricating semiconductor device Jul. 27, 2004
6756638 MOSFET structure with reduced junction capacitance Jun. 29, 2004
6750518 Semiconductor device Jun. 15, 2004
6740954 Semiconductor device reducing junction leakage current and narrow width effect May. 25, 2004
6724053 PMOSFET device with localized nitrogen sidewall implantation Apr. 20, 2004
6720633 High withstand voltage insulated gate N-channel field effect transistor Apr. 13, 2004
6707113 Semiconductor device with crenellated channel Mar. 16, 2004
6707119 Polygonal structure semiconductor device Mar. 16, 2004
6707099 Semiconductor device and manufacturing method thereof Mar. 16, 2004
6686300 Sub-critical-dimension integrated circuit features Feb. 3, 2004
6677210 High voltage transistors with graded extension Jan. 13, 2004
6624451 High frequency field effect transistor with carrier extraction to reduce intrinsic conduction Sep. 23, 2003
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6608349 Narrow/short high performance MOSFET device design Aug. 19, 2003
6603143 Semiconductor device and method for fabricating same Aug. 5, 2003
6602745 Field effect transistor and method of fabrication Aug. 5, 2003
6597026 Semiconductor device comprising plural isolated channels in a shallow trench isolation region Jul. 22, 2003
6593174 Field effect transistor having dielectrically isolated sources and drains and method for making same Jul. 15, 2003

1 2 3 4 5










 
 
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