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Class Information
Number: 257/E29.05
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo) > Of field-effect transistors (epo)
Description: This subclass is indented under subclass E29.049. This subclass is substantially the same in scope as ECLA classification H01L29/10D2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.051 With insulated gate (epo) 206
257/E29.057 With pn junction gate 37


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8502277 Field-effect transistor, single-electron transistor and sensor using the same Aug. 6, 2013
8203172 Nitride semiconductor device Jun. 19, 2012
8013320 Nitride semiconductor device and method for fabricating the same Sep. 6, 2011
6992319 Ultra-linear multi-channel field effect transistor Jan. 31, 2006
6953955 InGaAs/GaAs high electron mobility transistor Oct. 11, 2005
6872625 Field-effect transistor based on embedded cluster structures and process for its production Mar. 29, 2005
6867439 Field-effect transistor using a group III-V compound semiconductor Mar. 15, 2005
6787821 Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance Sep. 7, 2004
6770902 Charge carrier extracting transistor Aug. 3, 2004
6674100 SiGeC-based CMOSFET with separate heterojunctions Jan. 6, 2004
6531379 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Mar. 11, 2003
6528370 Semiconductor device and method of manufacturing the same Mar. 4, 2003
6501105 Compound semiconductor device Dec. 31, 2002
6498359 Field-effect transistor based on embedded cluster structures and process for its production Dec. 24, 2002
6469315 Semiconductor device and method of manufacturing the same Oct. 22, 2002
6458640 GaAs MESFET having LDD and non-uniform P-well doping profiles Oct. 1, 2002
6399970 FET having a Si/SiGeC heterojunction channel Jun. 4, 2002
6373082 Compound semiconductor field effect transistor Apr. 16, 2002
6333523 Field-effect transistor Dec. 25, 2001
6251755 High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe Jun. 26, 2001
6200838 Compound semiconductor device and method of manufacturing the same Mar. 13, 2001
6190975 Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer Feb. 20, 2001
6184546 High barrier gate and tri-step doped channel field-effect transistor Feb. 6, 2001
6159861 Method of manufacturing semiconductor device Dec. 12, 2000
6150680 Field effect semiconductor device having dipole barrier Nov. 21, 2000
6133593 Channel design to reduce impact ionization in heterostructure field-effect transistors Oct. 17, 2000
6043518 Multiple-function GaAs transistors with very strong negative differential resistance phenomena Mar. 28, 2000
6033942 Method of forming a metal-semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages Mar. 7, 2000
6028328 HEMT double hetero structure Feb. 22, 2000
6015981 Heterostructure field-effect transistors (HFETs') with high modulation effectivity Jan. 18, 2000
5959317 High frequency hetero junction type field effect transistor using multilayer electron feed layer Sep. 28, 1999
5942772 Semiconductor device and method of manufacturing the same Aug. 24, 1999
5903015 Field effect transistor using diamond May. 11, 1999
5888860 Method of making field effect transistor Mar. 30, 1999
5869856 Field effect transistor Feb. 9, 1999
5856681 Semiconductor device Jan. 5, 1999
5838030 GaInP/GaInAs/GaAs modulation-compositioned channel field-effect transistor Nov. 17, 1998
5834802 Metal semiconductor field effect transistors having improved intermodulation distortion using different pinch-off voltages Nov. 10, 1998
5824575 Semiconductor device and method of manufacturing the same Oct. 20, 1998
5821577 Graded channel field effect transistor Oct. 13, 1998
5808332 Field-effect semiconductor device Sep. 15, 1998
5801405 Field effect transistor Sep. 1, 1998
5777364 Graded channel field effect transistor Jul. 7, 1998
5777353 Multiple-function gaas transistors with very strong negative differential resistance phenomena Jul. 7, 1998
5760418 GaAs power semiconductor device operating at a low voltage and method for fabricating the same Jun. 2, 1998
5751030 Field effect transistor May. 12, 1998
5751027 Field effect semiconductor device with a low-noise drift layer and a high-power drift layer May. 12, 1998
5742077 Semiconductor device Apr. 21, 1998
5726467 Multiple narrow-line-channel fet having improved noise characteristics Mar. 10, 1998
5701016 Semiconductor device and method for its manufacture Dec. 23, 1997

1 2 3 4










 
 
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