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Class Information
Number: 257/E29.049
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Channel region of field-effect devices (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10D.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.058 Of charge coupled devices (epo) 116
257/E29.05 Of field-effect transistors (epo) 184


Patents under this class:

Patent Number Title Of Patent Date Issued
8618543 Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor Dec. 31, 2013
8569764 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same Oct. 29, 2013
8445320 Graphene channel-based devices and methods for fabrication thereof May. 21, 2013
8293591 Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor Oct. 23, 2012
8203172 Nitride semiconductor device Jun. 19, 2012
8148217 Semiconductor manufacturing method and semiconductor device Apr. 3, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8101474 Structure and method of forming buried-channel graphene field effect device Jan. 24, 2012
8043904 Semiconductor manufacturing method and semiconductor device Oct. 25, 2011
7994603 Semiconductor device and a method of manufacturing the same Aug. 9, 2011
7755113 Semiconductor device, semiconductor display device, and manufacturing method of semiconductor device Jul. 13, 2010
7692217 Matched analog CMOS transistors with extension wells Apr. 6, 2010
7662679 Semiconductor manufacturing method and semiconductor device Feb. 16, 2010
7632745 Hybrid high-k gate dielectric film Dec. 15, 2009
7491612 Field effect transistor with a heterostructure and associated production method Feb. 17, 2009
7423321 Double gate MOSFET device Sep. 9, 2008
7274051 Field effect transistor (FET) having wire channels and method of fabricating the same Sep. 25, 2007
6858502 High speed composite p-channel Si/SiGe heterostructure for field effect devices Feb. 22, 2005
6350993 High speed composite p-channel Si/SiGe heterostructure for field effect devices Feb. 26, 2002
5557141 Method of doping, semiconductor device, and method of fabricating semiconductor device Sep. 17, 1996
5350709 Method of doping a group III-V compound semiconductor Sep. 27, 1994
5161235 Field-effect compound semiconductive transistor with GaAs gate to increase barrier height and reduce turn-on threshold Nov. 3, 1992
5117268 Thermionic emission type static induction transistor and its integrated circuit May. 26, 1992
4984049 Static induction thyristor Jan. 8, 1991
4870469 Tunnel injection type static transistor and its integrated circuit Sep. 26, 1989
4835581 Electron gas hole gas tunneling transistor device May. 30, 1989
4712122 Heterojunction gate ballistic JFET with channel thinner than Debye length Dec. 8, 1987
4504847 Static induction type semiconductor device Mar. 12, 1985
4364072 Static induction type semiconductor device with multiple doped layers for potential modification Dec. 14, 1982
4343015 Vertical channel field effect transistor Aug. 3, 1982
4309714 Gate turn-off diodes and arrangements including such diodes Jan. 5, 1982
4129880 Channel depletion boundary modulation magnetic field sensor Dec. 12, 1978
4003072 Semiconductor device with high voltage breakdown resistance Jan. 11, 1977











 
 
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