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Class Information
Number: 257/E29.048
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base regions of thyristors (epo) > Cathode base regions of thyristors (epo)
Description: This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7385271 |
Chemical sensor using chemically induced electron-hole production at a schottky barrier |
Jun. 10, 2008 |
| 6373079 |
Thyristor with breakdown region |
Apr. 16, 2002 |
| 6093955 |
Power semiconductor device |
Jul. 25, 2000 |
| 6066864 |
Thyristor with integrated dU/dt protection |
May. 23, 2000 |
| 5939736 |
Insulated gate thyristor |
Aug. 17, 1999 |
| 5914502 |
Assembly of thyristors having a common cathode |
Jun. 22, 1999 |
| 5900651 |
High-withstand-voltage semiconductor device |
May. 4, 1999 |
| 5818074 |
Smooth switching thyristor |
Oct. 6, 1998 |
| 5793066 |
Base resistance controlled thyristor structure with high-density layout for increased current capacity |
Aug. 11, 1998 |
| 5767555 |
Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method |
Jun. 16, 1998 |
| 5710442 |
Semiconductor device and method of manufacturing same |
Jan. 20, 1998 |
| 5644150 |
Insulated gate thyristor |
Jul. 1, 1997 |
| 5637888 |
Insulated gate thyristor |
Jun. 10, 1997 |
| 5587595 |
Lateral field-effect-controlled semiconductor device on insulating substrate |
Dec. 24, 1996 |
| 5561077 |
Dielectric element isolated semiconductor device and a method of manufacturing the same |
Oct. 1, 1996 |
| 5550392 |
Semiconductor switching devices |
Aug. 27, 1996 |
| 5489789 |
Semiconductor device |
Feb. 6, 1996 |
| 5485030 |
Dielectric element isolated semiconductor device and a method of manufacturing the same |
Jan. 16, 1996 |
| 5455434 |
Thyristor with breakdown region |
Oct. 3, 1995 |
| 5324966 |
MOS-controlled thyristor |
Jun. 28, 1994 |
| 5319221 |
Semiconductor device with MISFET-controlled thyristor |
Jun. 7, 1994 |
| 5317172 |
PNPN semiconductor device capable of supporting a high rate of current change with time |
May. 31, 1994 |
| 5306930 |
Emitter switched thyristor with buried dielectric layer |
Apr. 26, 1994 |
| 5086242 |
Fast turn-off of thyristor structure |
Feb. 4, 1992 |
| 5081050 |
Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities |
Jan. 14, 1992 |
| 5021855 |
Gate turn-off thyristor |
Jun. 4, 1991 |
| 5017991 |
Light quenchable thyristor device |
May. 21, 1991 |
| 5003368 |
Turn-off thyristor |
Mar. 26, 1991 |
| 5003367 |
Sucking electrode for shortening the turn-off time in a semiconductor component |
Mar. 26, 1991 |
| 4994696 |
Turn-on/off driving technique for insulated gate thyristor |
Feb. 19, 1991 |
| 4982258 |
Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
Jan. 1, 1991 |
| 4959703 |
Turn-on/off driving technique for insulated gate thyristor |
Sep. 25, 1990 |
| 4951109 |
Turn-off power semiconductor component |
Aug. 21, 1990 |
| 4908687 |
Controlled turn-on thyristor |
Mar. 13, 1990 |
| 4901130 |
Protection thyristor with auxiliary gate |
Feb. 13, 1990 |
| 4866315 |
Turn-on/off driving technique for insulated gate thyristor |
Sep. 12, 1989 |
| 4841350 |
Static induction photothyristor having a non-homogeneously doped gate |
Jun. 20, 1989 |
| 4829348 |
Disconnectable power semiconductor component |
May. 9, 1989 |
| 4825270 |
Gate turn-off thyristor |
Apr. 25, 1989 |
| 4757025 |
Method of making gate turn off switch with anode short and buried base |
Jul. 12, 1988 |
| 4717940 |
MIS controlled gate turn-off thyristor |
Jan. 5, 1988 |
| 4695863 |
Gateless protection thyristor with a thick, heavily doped central N-layer |
Sep. 22, 1987 |
| 4682199 |
High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer |
Jul. 21, 1987 |
| 4667215 |
Semiconductor device |
May. 19, 1987 |
| 4651189 |
Semiconductor device provided with electrically floating control electrode |
Mar. 17, 1987 |
| 4651188 |
Semiconductor device with specifically oriented control layer |
Mar. 17, 1987 |
| 4609933 |
Gate turn-off thyristor having P.sup.+ gate and emitter |
Sep. 2, 1986 |
| 4605451 |
Process for making thyristor devices |
Aug. 12, 1986 |
| 4586070 |
Thyristor with abrupt anode emitter junction |
Apr. 29, 1986 |
| 4581543 |
Semiconductor switch having a disconnectible thyristor |
Apr. 8, 1986 |
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