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Class Information
Number: 257/E29.048
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base regions of thyristors (epo) > Cathode base regions of thyristors (epo)
Description: This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C3.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7705368 Insulated gate type thyristor Apr. 27, 2010
7385271 Chemical sensor using chemically induced electron-hole production at a schottky barrier Jun. 10, 2008
6373079 Thyristor with breakdown region Apr. 16, 2002
6093955 Power semiconductor device Jul. 25, 2000
6066864 Thyristor with integrated dU/dt protection May. 23, 2000
5939736 Insulated gate thyristor Aug. 17, 1999
5914502 Assembly of thyristors having a common cathode Jun. 22, 1999
5900651 High-withstand-voltage semiconductor device May. 4, 1999
5818074 Smooth switching thyristor Oct. 6, 1998
5793066 Base resistance controlled thyristor structure with high-density layout for increased current capacity Aug. 11, 1998
5767555 Compound semiconductor device controlled by MIS gate, driving method therefor and electric power conversion device using the compound semiconductor device and the driving method Jun. 16, 1998
5710442 Semiconductor device and method of manufacturing same Jan. 20, 1998
5644150 Insulated gate thyristor Jul. 1, 1997
5637888 Insulated gate thyristor Jun. 10, 1997
5587595 Lateral field-effect-controlled semiconductor device on insulating substrate Dec. 24, 1996
5561077 Dielectric element isolated semiconductor device and a method of manufacturing the same Oct. 1, 1996
5550392 Semiconductor switching devices Aug. 27, 1996
5489789 Semiconductor device Feb. 6, 1996
5485030 Dielectric element isolated semiconductor device and a method of manufacturing the same Jan. 16, 1996
5455434 Thyristor with breakdown region Oct. 3, 1995
5324966 MOS-controlled thyristor Jun. 28, 1994
5319221 Semiconductor device with MISFET-controlled thyristor Jun. 7, 1994
5317172 PNPN semiconductor device capable of supporting a high rate of current change with time May. 31, 1994
5306930 Emitter switched thyristor with buried dielectric layer Apr. 26, 1994
5086242 Fast turn-off of thyristor structure Feb. 4, 1992
5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities Jan. 14, 1992
5021855 Gate turn-off thyristor Jun. 4, 1991
5017991 Light quenchable thyristor device May. 21, 1991
5003368 Turn-off thyristor Mar. 26, 1991
5003367 Sucking electrode for shortening the turn-off time in a semiconductor component Mar. 26, 1991
4994696 Turn-on/off driving technique for insulated gate thyristor Feb. 19, 1991
4982258 Metal oxide semiconductor gated turn-off thyristor including a low lifetime region Jan. 1, 1991
4959703 Turn-on/off driving technique for insulated gate thyristor Sep. 25, 1990
4951109 Turn-off power semiconductor component Aug. 21, 1990
4908687 Controlled turn-on thyristor Mar. 13, 1990
4901130 Protection thyristor with auxiliary gate Feb. 13, 1990
4866315 Turn-on/off driving technique for insulated gate thyristor Sep. 12, 1989
4841350 Static induction photothyristor having a non-homogeneously doped gate Jun. 20, 1989
4829348 Disconnectable power semiconductor component May. 9, 1989
4825270 Gate turn-off thyristor Apr. 25, 1989
4757025 Method of making gate turn off switch with anode short and buried base Jul. 12, 1988
4717940 MIS controlled gate turn-off thyristor Jan. 5, 1988
4695863 Gateless protection thyristor with a thick, heavily doped central N-layer Sep. 22, 1987
4682199 High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer Jul. 21, 1987
4667215 Semiconductor device May. 19, 1987
4651189 Semiconductor device provided with electrically floating control electrode Mar. 17, 1987
4651188 Semiconductor device with specifically oriented control layer Mar. 17, 1987
4609933 Gate turn-off thyristor having P.sup.+ gate and emitter Sep. 2, 1986
4605451 Process for making thyristor devices Aug. 12, 1986

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