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Class Information
Number: 257/E29.047
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base regions of thyristors (epo) > Anode base regions of thyristors (epo)
Description: This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7220991 |
Thin film transistor array panel for liquid crystal display |
May. 22, 2007 |
| 6784465 |
Vertical power component manufacturing method |
Aug. 31, 2004 |
| 6723586 |
Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor |
Apr. 20, 2004 |
| 6660569 |
Method for producing a power semiconductor device with a stop zone |
Dec. 9, 2003 |
| 6579782 |
Vertical power component manufacturing method |
Jun. 17, 2003 |
| 6489187 |
Method for setting the breakover voltage of a thyristor |
Dec. 3, 2002 |
| 6472692 |
Semiconductor device |
Oct. 29, 2002 |
| 6441408 |
Power semiconductor component for high reverse voltages |
Aug. 27, 2002 |
| 6373079 |
Thyristor with breakdown region |
Apr. 16, 2002 |
| 6163040 |
Thyristor manufacturing method and thyristor |
Dec. 19, 2000 |
| 5665988 |
Conductivity-modulation semiconductor |
Sep. 9, 1997 |
| 5459338 |
Gate turn-off thyristor and power convertor using the same |
Oct. 17, 1995 |
| 5420045 |
Process for manufacturing thyristor with adjustable breakover voltage |
May. 30, 1995 |
| 5365086 |
Thyristors having a common cathode |
Nov. 15, 1994 |
| 5324966 |
MOS-controlled thyristor |
Jun. 28, 1994 |
| 5093705 |
Thyristor with reduced central zone thickness |
Mar. 3, 1992 |
| 5091336 |
Method of making a high breakdown active device structure with low series resistance |
Feb. 25, 1992 |
| 5017991 |
Light quenchable thyristor device |
May. 21, 1991 |
| 4982258 |
Metal oxide semiconductor gated turn-off thyristor including a low lifetime region |
Jan. 1, 1991 |
| 4980742 |
Turn-off thyristor |
Dec. 25, 1990 |
| 4975751 |
High breakdown active device structure with low series resistance |
Dec. 4, 1990 |
| 4967255 |
Controllable power semiconductor component |
Oct. 30, 1990 |
| 4831423 |
Semiconductor devices employing conductivity modulation |
May. 16, 1989 |
| 4786958 |
Lateral dual gate thyristor and method of fabricating same |
Nov. 22, 1988 |
| 4782379 |
Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device |
Nov. 1, 1988 |
| 4694313 |
Conductivity modulated semiconductor structure |
Sep. 15, 1987 |
| 4639276 |
Method of making thyristor with a high tolerable bias voltage |
Jan. 27, 1987 |
| 4636830 |
Insulated gate-controlled thyristor having shorted anode |
Jan. 13, 1987 |
| 4630092 |
Insulated gate-controlled thyristor |
Dec. 16, 1986 |
| 4611235 |
Thyristor with turn-off FET |
Sep. 9, 1986 |
| 4377816 |
Semiconductor element with zone guard rings |
Mar. 22, 1983 |
| 4314266 |
Thyristor with voltage breakover current control separated from main emitter by current limit region |
Feb. 2, 1982 |
| 4275408 |
Thyristor |
Jun. 23, 1981 |
| 4259683 |
High switching speed P-N junction devices with recombination means centrally located in high resistivity layer |
Mar. 31, 1981 |
| 4156248 |
Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion |
May. 22, 1979 |
| 4109274 |
Semiconductor switching device with breakdown diode formed in the bottom of a recess |
Aug. 22, 1978 |
| 3999217 |
Semiconductor device having parallel path for current flow |
Dec. 21, 1976 |
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