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Class Information
Number: 257/E29.047
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base regions of thyristors (epo) > Anode base regions of thyristors (epo)
Description: This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8558218 Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivites and structures formed thereby Oct. 15, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7875511 CMOS structure including differential channel stressing layer compositions Jan. 25, 2011
7705368 Insulated gate type thyristor Apr. 27, 2010
7220991 Thin film transistor array panel for liquid crystal display May. 22, 2007
6784465 Vertical power component manufacturing method Aug. 31, 2004
6723586 Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor Apr. 20, 2004
6660569 Method for producing a power semiconductor device with a stop zone Dec. 9, 2003
6579782 Vertical power component manufacturing method Jun. 17, 2003
6489187 Method for setting the breakover voltage of a thyristor Dec. 3, 2002
6472692 Semiconductor device Oct. 29, 2002
6441408 Power semiconductor component for high reverse voltages Aug. 27, 2002
6373079 Thyristor with breakdown region Apr. 16, 2002
6163040 Thyristor manufacturing method and thyristor Dec. 19, 2000
5665988 Conductivity-modulation semiconductor Sep. 9, 1997
5459338 Gate turn-off thyristor and power convertor using the same Oct. 17, 1995
5420045 Process for manufacturing thyristor with adjustable breakover voltage May. 30, 1995
5365086 Thyristors having a common cathode Nov. 15, 1994
5324966 MOS-controlled thyristor Jun. 28, 1994
5093705 Thyristor with reduced central zone thickness Mar. 3, 1992
5091336 Method of making a high breakdown active device structure with low series resistance Feb. 25, 1992
5017991 Light quenchable thyristor device May. 21, 1991
4982258 Metal oxide semiconductor gated turn-off thyristor including a low lifetime region Jan. 1, 1991
4980742 Turn-off thyristor Dec. 25, 1990
4975751 High breakdown active device structure with low series resistance Dec. 4, 1990
4967255 Controllable power semiconductor component Oct. 30, 1990
4831423 Semiconductor devices employing conductivity modulation May. 16, 1989
4786958 Lateral dual gate thyristor and method of fabricating same Nov. 22, 1988
4782379 Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device Nov. 1, 1988
4694313 Conductivity modulated semiconductor structure Sep. 15, 1987
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4636830 Insulated gate-controlled thyristor having shorted anode Jan. 13, 1987
4630092 Insulated gate-controlled thyristor Dec. 16, 1986
4611235 Thyristor with turn-off FET Sep. 9, 1986
4377816 Semiconductor element with zone guard rings Mar. 22, 1983
4314266 Thyristor with voltage breakover current control separated from main emitter by current limit region Feb. 2, 1982
4275408 Thyristor Jun. 23, 1981
4259683 High switching speed P-N junction devices with recombination means centrally located in high resistivity layer Mar. 31, 1981
4156248 Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion May. 22, 1979
4109274 Semiconductor switching device with breakdown diode formed in the bottom of a recess Aug. 22, 1978
3999217 Semiconductor device having parallel path for current flow Dec. 21, 1976

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