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Class Information
Number: 257/E29.046
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base regions of thyristors (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10C.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.047 Anode base regions of thyristors (epo) 41
257/E29.048 Cathode base regions of thyristors (epo) 84


Patents under this class:

Patent Number Title Of Patent Date Issued
8569117 Systems and methods integrating trench-gated thyristor with trench-gated rectifier Oct. 29, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8324656 Reduction of electrostatic coupling for a thyristor-based memory cell Dec. 4, 2012
7705368 Insulated gate type thyristor Apr. 27, 2010
7205583 Thyristor and method of manufacture Apr. 17, 2007
6977398 C implants for improved SiGe bipolar yield Dec. 20, 2005
6897545 Lateral operation bipolar transistor and a corresponding fabrication process May. 24, 2005
6734496 Semiconductor device May. 11, 2004
6724040 Semiconductor device Apr. 20, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6720590 C implants for improved SiGe bipolar yield Apr. 13, 2004
6700157 Semiconductor device Mar. 2, 2004
6627948 Vertical layer type semiconductor device Sep. 30, 2003
6566709 Semiconductor device May. 20, 2003
6534371 C implants for improved SiGe bipolar yield Mar. 18, 2003
6294818 Parallel-stripe type semiconductor device Sep. 25, 2001
6097063 Semiconductor device having a plurality of parallel drift regions Aug. 1, 2000
5396097 Transistor with common base region Mar. 7, 1995
4806497 Method for producing large-area power semiconductor components Feb. 21, 1989
4569118 Planar gate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same Feb. 11, 1986
4441115 Thyristor having a center pn junction formed by plastic deformation of the crystal lattice Apr. 3, 1984
4377816 Semiconductor element with zone guard rings Mar. 22, 1983
4142201 Light-controlled thyristor with anode-base surface firing Feb. 27, 1979











 
 
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