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Class Information
Number: 257/E29.045
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base region of bipolar transistors (epo) > Of lateral transistors (epo)
Description: This subclass is indented under subclass E29.044. This subclass is substantially the same in scope as ECLA classification H01L29/10B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8569866 Hybrid-integrated lateral bipolar transistor and CMOS transistor and method for manufacturing the same Oct. 29, 2013
8410572 Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production Apr. 2, 2013
7705426 Integration of a SiGe- or SiGeC-based HBT with a SiGe- or SiGeC-strapped semiconductor device Apr. 27, 2010
7038249 Horizontal current bipolar transistor and fabrication method May. 2, 2006
6982473 Bipolar transistor Jan. 3, 2006
6975924 Method and apparatus for controlling the strategy of compounding pharmaceutical admixtures Dec. 13, 2005
6894348 Semiconductor device May. 17, 2005
6822314 Base for a NPN bipolar transistor Nov. 23, 2004
6737722 Lateral transistor having graded base region, semiconductor integrated circuit and fabrication method thereof May. 18, 2004
6437421 Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types Aug. 20, 2002
6376897 Lateral bipolar transistor formed on an insulating layer Apr. 23, 2002
6100151 Highly integrated bipolar junction transistors having trench-based emitter and base regions and methods of forming same Aug. 8, 2000
5920111 CMOS OP-AMP circuit using BJT as input stage Jul. 6, 1999
5734183 Heterojunction bipolar transistor structure Mar. 31, 1998
5614424 Method for fabricating an accumulated-base bipolar junction transistor Mar. 25, 1997
5444004 CMOS process compatible self-alignment lateral bipolar junction transistor Aug. 22, 1995
5374568 Method for forming a base link in a bipolar transistor Dec. 20, 1994
5298786 SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same Mar. 29, 1994
5166764 Input protection device Nov. 24, 1992
5130262 Internal current limit and overvoltage protection method Jul. 14, 1992
5086005 Bipolar transistor and method for manufacturing the same Feb. 4, 1992
5045911 Lateral PNP transistor and method for forming same Sep. 3, 1991
5031014 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom Jul. 9, 1991
4998155 Radiation-hardened semiconductor device with surface layer Mar. 5, 1991
4996164 Method for forming lateral PNP transistor Feb. 26, 1991
4971921 Semiconductor device and method of manufacturing the same Nov. 20, 1990
4956305 Process for fabricating an integrated circuit Sep. 11, 1990
4903106 Semiconductor power device integrated with temperature protection means Feb. 20, 1990
4829356 Lateral transistor with buried semiconductor zone May. 9, 1989
4772932 Bipolar transistor and including gas layers between the emitter and base and the base and collector Sep. 20, 1988
4769687 Lateral bipolar transistor and method of producing the same Sep. 6, 1988
4695862 Semiconductor apparatus Sep. 22, 1987
4584762 Lateral transistor separated from substrate by intersecting slots filled with substrate oxide for minimal interference therefrom and method for producing same Apr. 29, 1986
4547793 Trench-defined semiconductor structure Oct. 15, 1985
4435899 Method of producing lateral transistor separated from substrate by intersecting slots filled with substrate oxide Mar. 13, 1984
4419150 Method of forming lateral bipolar transistors Dec. 6, 1983
4259680 High speed lateral bipolar transistor Mar. 31, 1981
4244001 Fabrication of an integrated injection logic device with narrow basewidth Jan. 6, 1981
4109272 Lateral bipolar transistor Aug. 22, 1978
4066473 Method of fabricating high-gain transistors Jan. 3, 1978











 
 
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