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Class Information
Number: 257/E29.044
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base region of bipolar transistors (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10B.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.045 Of lateral transistors (epo) 40

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7838965 ESD protected integrated capacitor with large capacity Nov. 23, 2010
7772079 Vertical organic transistor Aug. 10, 2010
7692269 Vertical organic transistor Apr. 6, 2010
7667295 Semiconductor device Feb. 23, 2010
7656002 Integrated bipolar transistor and field effect transistor Feb. 2, 2010
7618871 Method for the production of a bipolar transistor comprising an improved base terminal Nov. 17, 2009
7541249 Process for producing a base connection of a bipolar transistor Jun. 2, 2009
7521772 Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods Apr. 21, 2009
7485538 High performance SiGe HBT with arsenic atomic layer doping Feb. 3, 2009
7442616 Method of manufacturing a bipolar transistor and bipolar transistor thereof Oct. 28, 2008
7358546 Heterobipolar transistor and method of fabricating the same Apr. 15, 2008
7256433 Bipolar transistor and a method of manufacturing the same Aug. 14, 2007
7091100 Polysilicon bipolar transistor and method of manufacturing it Aug. 15, 2006
7064361 NPN transistor having reduced extrinsic base resistance and improved manufacturability Jun. 20, 2006
7042293 DC/DC converter using bipolar transistor, method of manufacturing the same and DC power supply module using the same May. 9, 2006
7038250 Semiconductor device suited for a high frequency amplifier May. 2, 2006
7038298 High f.sub.T and f.sub.max bipolar transistor and method of making same May. 2, 2006
7037799 Breakdown voltage adjustment for bipolar transistors May. 2, 2006
7037798 Bipolar transistor structure with self-aligned raised extrinsic base and methods May. 2, 2006
7030462 Heterojunction bipolar transistor having specified lattice constants Apr. 18, 2006
7026666 Self-aligned NPN transistor with raised extrinsic base Apr. 11, 2006
7023072 Bipolar transistor Apr. 4, 2006
7009279 Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof Mar. 7, 2006
7002221 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Feb. 21, 2006
6989557 Bipolar junction transistor and fabricating method Jan. 24, 2006
6989581 Wide band gap bipolar transistor with reduced thermal runaway Jan. 24, 2006
6984872 Method for fabricating an NPN transistor in a BICMOS technology Jan. 10, 2006
6982442 Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base Jan. 3, 2006
6967144 Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base Nov. 22, 2005
6964907 Method of etching a lateral trench under an extrinsic base and improved bipolar transistor Nov. 15, 2005
6960820 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same Nov. 1, 2005
6939772 Bipolar transistor and fabrication method thereof Sep. 6, 2005
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6930011 Semiconductor device with a bipolar transistor, and method of manufacturing such a device Aug. 16, 2005
6927140 Method for fabricating a bipolar transistor base Aug. 9, 2005
6927476 Bipolar device having shallow junction raised extrinsic base and method for making the same Aug. 9, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005
6913981 Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer Jul. 5, 2005
6911681 Method of base formation in a BiCMOS process Jun. 28, 2005
6911368 Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement Jun. 28, 2005
6900519 Diffused extrinsic base and method for fabrication May. 31, 2005
6900105 Semiconductor device and method of manufacture May. 31, 2005
6897546 Semiconductor device including a functional element having a PN junction May. 24, 2005
6897547 Semiconductor device including bipolar junction transistor, and production method therefor May. 24, 2005
6894367 Vertical bipolar transistor May. 17, 2005
6888221 BICMOS technology on SIMOX wafers May. 3, 2005
6869854 Diffused extrinsic base and method for fabrication Mar. 22, 2005
6869852 Self-aligned raised extrinsic base bipolar transistor structure and method Mar. 22, 2005
6864517 Bipolar structure with two base-emitter junctions in the same circuit Mar. 8, 2005
6861323 Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance Mar. 1, 2005

1 2 3 4 5 6 7 8

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