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Class Information
Number: 257/E29.044
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Base region of bipolar transistors (epo)
Description: This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10B.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7838965 |
ESD protected integrated capacitor with large capacity |
Nov. 23, 2010 |
| 7772079 |
Vertical organic transistor |
Aug. 10, 2010 |
| 7692269 |
Vertical organic transistor |
Apr. 6, 2010 |
| 7667295 |
Semiconductor device |
Feb. 23, 2010 |
| 7656002 |
Integrated bipolar transistor and field effect transistor |
Feb. 2, 2010 |
| 7618871 |
Method for the production of a bipolar transistor comprising an improved base terminal |
Nov. 17, 2009 |
| 7541249 |
Process for producing a base connection of a bipolar transistor |
Jun. 2, 2009 |
| 7521772 |
Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods |
Apr. 21, 2009 |
| 7485538 |
High performance SiGe HBT with arsenic atomic layer doping |
Feb. 3, 2009 |
| 7442616 |
Method of manufacturing a bipolar transistor and bipolar transistor thereof |
Oct. 28, 2008 |
| 7358546 |
Heterobipolar transistor and method of fabricating the same |
Apr. 15, 2008 |
| 7256433 |
Bipolar transistor and a method of manufacturing the same |
Aug. 14, 2007 |
| 7091100 |
Polysilicon bipolar transistor and method of manufacturing it |
Aug. 15, 2006 |
| 7064361 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
Jun. 20, 2006 |
| 7042293 |
DC/DC converter using bipolar transistor, method of manufacturing the same and DC power supply module using the same |
May. 9, 2006 |
| 7038250 |
Semiconductor device suited for a high frequency amplifier |
May. 2, 2006 |
| 7038298 |
High f.sub.T and f.sub.max bipolar transistor and method of making same |
May. 2, 2006 |
| 7037799 |
Breakdown voltage adjustment for bipolar transistors |
May. 2, 2006 |
| 7037798 |
Bipolar transistor structure with self-aligned raised extrinsic base and methods |
May. 2, 2006 |
| 7030462 |
Heterojunction bipolar transistor having specified lattice constants |
Apr. 18, 2006 |
| 7026666 |
Self-aligned NPN transistor with raised extrinsic base |
Apr. 11, 2006 |
| 7023072 |
Bipolar transistor |
Apr. 4, 2006 |
| 7009279 |
Semiconductor device configured for suppressed germanium diffusion from a germanium-doped regions and a method for fabrication thereof |
Mar. 7, 2006 |
| 7002221 |
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
Feb. 21, 2006 |
| 6989557 |
Bipolar junction transistor and fabricating method |
Jan. 24, 2006 |
| 6989581 |
Wide band gap bipolar transistor with reduced thermal runaway |
Jan. 24, 2006 |
| 6984872 |
Method for fabricating an NPN transistor in a BICMOS technology |
Jan. 10, 2006 |
| 6982442 |
Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base |
Jan. 3, 2006 |
| 6967144 |
Low doped base spacer for reduction of emitter-base capacitance in bipolar transistors with selectively grown epitaxial base |
Nov. 22, 2005 |
| 6964907 |
Method of etching a lateral trench under an extrinsic base and improved bipolar transistor |
Nov. 15, 2005 |
| 6960820 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 1, 2005 |
| 6939772 |
Bipolar transistor and fabrication method thereof |
Sep. 6, 2005 |
| 6940357 |
Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line |
Sep. 6, 2005 |
| 6930011 |
Semiconductor device with a bipolar transistor, and method of manufacturing such a device |
Aug. 16, 2005 |
| 6927140 |
Method for fabricating a bipolar transistor base |
Aug. 9, 2005 |
| 6927476 |
Bipolar device having shallow junction raised extrinsic base and method for making the same |
Aug. 9, 2005 |
| 6917061 |
AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor |
Jul. 12, 2005 |
| 6913981 |
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
Jul. 5, 2005 |
| 6911681 |
Method of base formation in a BiCMOS process |
Jun. 28, 2005 |
| 6911368 |
Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement |
Jun. 28, 2005 |
| 6900519 |
Diffused extrinsic base and method for fabrication |
May. 31, 2005 |
| 6900105 |
Semiconductor device and method of manufacture |
May. 31, 2005 |
| 6897546 |
Semiconductor device including a functional element having a PN junction |
May. 24, 2005 |
| 6897547 |
Semiconductor device including bipolar junction transistor, and production method therefor |
May. 24, 2005 |
| 6894367 |
Vertical bipolar transistor |
May. 17, 2005 |
| 6888221 |
BICMOS technology on SIMOX wafers |
May. 3, 2005 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Mar. 22, 2005 |
| 6869852 |
Self-aligned raised extrinsic base bipolar transistor structure and method |
Mar. 22, 2005 |
| 6864517 |
Bipolar structure with two base-emitter junctions in the same circuit |
Mar. 8, 2005 |
| 6861323 |
Method for forming a SiGe heterojunction bipolar transistor having reduced base resistance |
Mar. 1, 2005 |
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