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Class Information
Number: 257/E29.043
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo)
Description: This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/10.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.044 Base region of bipolar transistors (epo) 396
257/E29.046 Base regions of thyristors (epo) 23
257/E29.066 Body region structure of igfet's with channel containing layer (dmosfet or igbt) (epo) 550
257/E29.049 Channel region of field-effect devices (epo) 33
257/E29.059 Gate region of field-effect devices with pn junction gate (epo) 116
257/E29.06 Substrate region of field-effect devices (epo) 19

Patents under this class:

Patent Number Title Of Patent Date Issued
8389374 Method for producing a microfabricated in-plane radio frequency (RF) capacitor Mar. 5, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8378342 Oxide semiconductor and thin film transistor including the same Feb. 19, 2013
8203172 Nitride semiconductor device Jun. 19, 2012
8063494 Semiconductor device and power supply unit utilizing the same Nov. 22, 2011
7982219 Pixel array Jul. 19, 2011
7935964 Oxide semiconductors and thin film transistors comprising the same May. 3, 2011
7470929 Fuse/anti-fuse structure and methods of making and programming same Dec. 30, 2008
7423332 Vertical laminated electrical switch circuit Sep. 9, 2008
7422970 Method for modifying circuit within substrate Sep. 9, 2008
7211865 Silicided body contact SOI device May. 1, 2007
6946364 Integrated circuit having a device wafer with a diffused doped backside layer Sep. 20, 2005
6867495 Integrated circuit having a device wafer with a diffused doped backside layer Mar. 15, 2005
6362075 Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide Mar. 26, 2002
6255693 Ion implantation with programmable energy, angle, and beam current Jul. 3, 2001
6229148 Ion implantation with programmable energy, angle, and beam current May. 8, 2001
6225674 Semiconductor structure and method of manufacture May. 1, 2001
6111281 Solid-state image-pickup device and MOS transistor having a reduced incidental capacitance Aug. 29, 2000
5599389 Compound semiconductor and method of manufacturing the same Feb. 4, 1997
5196908 Micro MIS type FET and manufacturing process therefor Mar. 23, 1993
5155568 High-voltage semiconductor device Oct. 13, 1992
5034335 Method of manufacturing a silicon on insulator (SOI) semiconductor device Jul. 23, 1991
4937648 Resistant transistor Jun. 26, 1990
4936928 Semiconductor device Jun. 26, 1990
4902633 Process for making a bipolar integrated circuit Feb. 20, 1990
4903091 Heterojunction transistor having bipolar characteristics Feb. 20, 1990
4887144 Topside substrate contact in a trenched semiconductor structure and method of fabrication Dec. 12, 1989
4864377 Silicon on insulator (SOI) semiconductor device Sep. 5, 1989
H569 Charge storage depletion region discharge protection Jan. 3, 1989
4757027 Method for fabricating improved oxide defined transistors Jul. 12, 1988
4727403 Double heterojunction semiconductor device with injector Feb. 23, 1988
4633279 Semiconductor devices Dec. 30, 1986
4442445 Planar doped barrier gate field effect transistor Apr. 10, 1984

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