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Browse by Category: Main > Physics
Class Information
Number: 257/E29.042
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Tunneling barrier (epo)
Description: This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08T.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8659069 Gate structures Feb. 25, 2014
8648406 Single poly EEPROM having a tunnel oxide layer Feb. 11, 2014
8637851 Graphene device having physical gap Jan. 28, 2014
8637921 Nitridation oxidation of tunneling layer for improved SONOS speed and retention Jan. 28, 2014
8614124 SONOS ONO stack scaling Dec. 24, 2013
8575674 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same Nov. 5, 2013
8519488 III-V metal-oxide-semiconductor device Aug. 27, 2013
8487450 Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems Jul. 16, 2013
8441000 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 14, 2013
8405121 Semiconductor devices Mar. 26, 2013
8399918 Electronic device including a tunnel structure Mar. 19, 2013
7981735 Method of manufacturing a Schottky barrier tunnel transistor Jul. 19, 2011
7947557 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 24, 2011
7897412 Method of manufacturing magnetic random access memory including middle oxide layer Mar. 1, 2011
7875958 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jan. 25, 2011
7843033 Shielded integrated circuit pad structure Nov. 30, 2010
7768035 Semiconductor device and method of manufacturing the same Aug. 3, 2010
7683364 Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants Mar. 23, 2010
7602009 Erasable non-volatile memory device using hole trapping in high-K dielectrics Oct. 13, 2009
7595500 High speed electron tunneling devices Sep. 29, 2009
7592268 Method for fabricating semiconductor device Sep. 22, 2009
7534710 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same May. 19, 2009
7476927 Scalable multi-functional and multi-level nano-crystal non-volatile memory device Jan. 13, 2009
7396777 Method of fabricating high-k dielectric layer having reduced impurity Jul. 8, 2008
7323709 Method for increasing efficiency of thermotunnel devices Jan. 29, 2008
7259437 High performance spin-valve transistor Aug. 21, 2007
7166881 Multi-sensing level MRAM structures Jan. 23, 2007
7023030 MISFET Apr. 4, 2006
7008852 Discontinuous dielectric interface for bipolar transistors Mar. 7, 2006
6995418 Integrated semiconductor storage with at least a storage cell and procedure Feb. 7, 2006
6939771 Discontinuous dielectric interface for bipolar transistors Sep. 6, 2005
6873009 Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode Mar. 29, 2005
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6724088 Quantum conductive barrier for contact to shallow diffusion region Apr. 20, 2004
6703283 Discontinuous dielectric interface for bipolar transistors Mar. 9, 2004
6674099 MISFET Jan. 6, 2004
6674130 High performance PD SOI tunneling-biased MOSFET Jan. 6, 2004
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process Dec. 2, 2003
6566680 Semiconductor-on-insulator (SOI) tunneling junction transistor May. 20, 2003
6518105 High performance PD SOI tunneling-biased MOSFET Feb. 11, 2003
6380010 Shielded channel transistor structure with embedded source/drain junctions Apr. 30, 2002
6320211 Semiconductor device and electronic device by use of the semiconductor Nov. 20, 2001
6284582 MOS-gate tunneling-injection bipolar transistor Sep. 4, 2001
6274913 Shielded channel transistor structure with embedded source/drain junctions Aug. 14, 2001
6228732 Tunnel nitride for improved polysilicon emitter May. 8, 2001
6211562 Homojunction semiconductor devices with low barrier tunnel oxide contacts Apr. 3, 2001
6118136 Superlatticed negative-differential-resistance functional transistor Sep. 12, 2000
5949103 MOSFET with tunneling insulation and fabrication method thereof Sep. 7, 1999
5734183 Heterojunction bipolar transistor structure Mar. 31, 1998
5712491 Lateral theta device Jan. 27, 1998

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