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Class Information
Number: 257/E29.042
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Tunneling barrier (epo)
Description: This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08T.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7396777 |
Method of fabricating high-k dielectric layer having reduced impurity |
Jul. 8, 2008 |
| 7323709 |
Method for increasing efficiency of thermotunnel devices |
Jan. 29, 2008 |
| 7259437 |
High performance spin-valve transistor |
Aug. 21, 2007 |
| 7166881 |
Multi-sensing level MRAM structures |
Jan. 23, 2007 |
| 7023030 |
MISFET |
Apr. 4, 2006 |
| 7008852 |
Discontinuous dielectric interface for bipolar transistors |
Mar. 7, 2006 |
| 6995418 |
Integrated semiconductor storage with at least a storage cell and procedure |
Feb. 7, 2006 |
| 6939771 |
Discontinuous dielectric interface for bipolar transistors |
Sep. 6, 2005 |
| 6873009 |
Vertical semiconductor device with tunnel insulator in current path controlled by gate electrode |
Mar. 29, 2005 |
| 6833556 |
Insulated gate field effect transistor having passivated schottky barriers to the channel |
Dec. 21, 2004 |
| 6724088 |
Quantum conductive barrier for contact to shallow diffusion region |
Apr. 20, 2004 |
| 6703283 |
Discontinuous dielectric interface for bipolar transistors |
Mar. 9, 2004 |
| 6674130 |
High performance PD SOI tunneling-biased MOSFET |
Jan. 6, 2004 |
| 6674099 |
MISFET |
Jan. 6, 2004 |
| 6656812 |
Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process |
Dec. 2, 2003 |
| 6566680 |
Semiconductor-on-insulator (SOI) tunneling junction transistor |
May. 20, 2003 |
| 6518105 |
High performance PD SOI tunneling-biased MOSFET |
Feb. 11, 2003 |
| 6380010 |
Shielded channel transistor structure with embedded source/drain junctions |
Apr. 30, 2002 |
| 6320211 |
Semiconductor device and electronic device by use of the semiconductor |
Nov. 20, 2001 |
| 6284582 |
MOS-gate tunneling-injection bipolar transistor |
Sep. 4, 2001 |
| 6274913 |
Shielded channel transistor structure with embedded source/drain junctions |
Aug. 14, 2001 |
| 6228732 |
Tunnel nitride for improved polysilicon emitter |
May. 8, 2001 |
| 6211562 |
Homojunction semiconductor devices with low barrier tunnel oxide contacts |
Apr. 3, 2001 |
| 6118136 |
Superlatticed negative-differential-resistance functional transistor |
Sep. 12, 2000 |
| 5949103 |
MOSFET with tunneling insulation and fabrication method thereof |
Sep. 7, 1999 |
| 5734183 |
Heterojunction bipolar transistor structure |
Mar. 31, 1998 |
| 5712491 |
Lateral theta device |
Jan. 27, 1998 |
| 5646418 |
Quantum effect switching device |
Jul. 8, 1997 |
| 5610435 |
Semiconductor device having an electrode which controls a surface state of the base area for minimizing a change of the D.C. amplification ratio |
Mar. 11, 1997 |
| 5541422 |
Tunnel diode with several permanent switching states |
Jul. 30, 1996 |
| 5486704 |
Semiconductor device and electronic device by use of the semiconductor |
Jan. 23, 1996 |
| 5389804 |
Resonant-tunneling heterojunction bipolar transistor device |
Feb. 14, 1995 |
| 5323021 |
Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode |
Jun. 21, 1994 |
| 5272357 |
Semiconductor device and electronic device by use of the semiconductor |
Dec. 21, 1993 |
| 5206524 |
Heterostructure bipolar transistor |
Apr. 27, 1993 |
| 5151618 |
Resonant-tunneling heterojunction bipolar transistor device |
Sep. 29, 1992 |
| 5140299 |
Article comprising a high value resistor |
Aug. 18, 1992 |
| 5031005 |
Semiconductor device |
Jul. 9, 1991 |
| 5027179 |
Resonant-tunneling heterojunction bipolar transistor device |
Jun. 25, 1991 |
| 4999697 |
Sequential-quenching resonant-tunneling transistor |
Mar. 12, 1991 |
| 4958201 |
Resonant tunneling minority carrier transistor |
Sep. 18, 1990 |
| 4845541 |
Tunneling emitter bipolar transistor |
Jul. 4, 1989 |
| 4683642 |
Method for fabricating MOMS semiconductor device |
Aug. 4, 1987 |
| 4672413 |
Barrier emitter transistor |
Jun. 9, 1987 |
| 4631560 |
MOMS tunnel emission transistor |
Dec. 23, 1986 |
| 4380774 |
High-performance bipolar microwave transistor |
Apr. 19, 1983 |
| 4131902 |
Novel bipolar transistor with a dual-dielectric tunnel emitter |
Dec. 26, 1978 |
| 4015282 |
Solid state amplifier device and circuit therefor |
Mar. 29, 1977 |
| 3980505 |
Process of making a filament-type memory semiconductor device |
Sep. 14, 1976 |
| 3979613 |
Multi-terminal controlled-inversion semiconductor devices |
Sep. 7, 1976 |
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