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Class Information
Number: 257/E29.041
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Source or drain regions of field-effect devices (epo) > Of field-effect transistors with schottky gate (epo)
Description: This subclass is indented under subclass E29.039. This subclass is substantially the same in scope as ECLA classification H01L29/08E3.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8610213 Semiconductor device and semiconductor package Dec. 17, 2013
8592878 Semiconductor devices with low leakage Schottky contacts Nov. 26, 2013
8569843 Semiconductor device Oct. 29, 2013
8344463 Bidirectional switch Jan. 1, 2013
8227867 Body contacted hybrid surface semiconductor-on-insulator devices Jul. 24, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
7939865 Metal semiconductor field effect transistor (MESFET) silicon-on-insulator structure having partial trench spacers May. 10, 2011
7935620 Method for forming semiconductor devices with low leakage Schottky contacts May. 3, 2011
7928480 Semiconductor device Apr. 19, 2011
7759760 Semiconductor switching element and semiconductor circuit apparatus Jul. 20, 2010
7709864 High-efficiency Schottky rectifier and method of manufacturing same May. 4, 2010
7705377 Field effect transistor comprising compound semiconductor Apr. 27, 2010
7700423 Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer Apr. 20, 2010
7696531 Semiconductor device and manufacturing method thereof Apr. 13, 2010
7692222 Atomic layer deposition in the formation of gate structures for III-V semiconductor Apr. 6, 2010
7655546 Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same Feb. 2, 2010
7651905 Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts Jan. 26, 2010
7633135 Bottom anode Schottky diode structure and method Dec. 15, 2009
7538362 Lateral semiconductor diode and method for fabricating it May. 26, 2009
7504328 Schottky barrier source/drain n-mosfet using ytterbium silicide Mar. 17, 2009
6967360 Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof Nov. 22, 2005
6943386 Pseudomorphic high electron mobility field effect transistor with high device linearity Sep. 13, 2005
6833571 Transistor device including buried source Dec. 21, 2004
6787821 Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance Sep. 7, 2004
6624440 Field effect transistor Sep. 23, 2003
6498360 Coupled-well structure for transport channel in field effect transistors Dec. 24, 2002
6429471 Compound semiconductor field effect transistor and method for the fabrication thereof Aug. 6, 2002
6329230 High-speed compound semiconductor device having an improved gate structure Dec. 11, 2001
6147370 Field effect transistor with first and second drain electrodes Nov. 14, 2000
6134424 High-frequency power amplifier and mobile communication device using same Oct. 17, 2000
6121153 Semiconductor device having a regrowth crystal region Sep. 19, 2000
6078071 High-speed compound semiconductor device having an improved gate structure Jun. 20, 2000
6037200 Compound semiconductor device and fabrication method Mar. 14, 2000
5982036 Multi-layered structure for ohmic electrode fabrication Nov. 9, 1999
5925903 Field-effect transistors and method of manufacturing the same Jul. 20, 1999
5907177 Semiconductor device having a tapered gate electrode May. 25, 1999
5891757 Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer Apr. 6, 1999
5888859 Method of fabricating semiconductor device Mar. 30, 1999
5880483 Semiconductor devices Mar. 9, 1999
5874753 Field effect transistor Feb. 23, 1999
5837570 Heterostructure semiconductor device and method of fabricating same Nov. 17, 1998
5818078 Semiconductor device having a regrowth crystal region Oct. 6, 1998
5808332 Field-effect semiconductor device Sep. 15, 1998
5767007 Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode Jun. 16, 1998
5728611 Method of fabricating semiconductor device Mar. 17, 1998
5698868 High-speed heterojunction transistor Dec. 16, 1997
5693969 MESFET having a termination layer in the channel layer Dec. 2, 1997
5688703 Method of manufacturing a gate structure for a metal semiconductor field effect transistor Nov. 18, 1997
5672890 Field effect transistor with lightly doped drain regions Sep. 30, 1997
5652451 Recessed gate field effect transistor Jul. 29, 1997

1 2 3

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