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Class Information
Number: 257/E29.041
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Source or drain regions of field-effect devices (epo) > Of field-effect transistors with schottky gate (epo)
Description: This subclass is indented under subclass E29.039. This subclass is substantially the same in scope as ECLA classification H01L29/08E3.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6967360 |
Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereof |
Nov. 22, 2005 |
| 6943386 |
Pseudomorphic high electron mobility field effect transistor with high device linearity |
Sep. 13, 2005 |
| 6833571 |
Transistor device including buried source |
Dec. 21, 2004 |
| 6787821 |
Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance |
Sep. 7, 2004 |
| 6624440 |
Field effect transistor |
Sep. 23, 2003 |
| 6498360 |
Coupled-well structure for transport channel in field effect transistors |
Dec. 24, 2002 |
| 6429471 |
Compound semiconductor field effect transistor and method for the fabrication thereof |
Aug. 6, 2002 |
| 6329230 |
High-speed compound semiconductor device having an improved gate structure |
Dec. 11, 2001 |
| 6147370 |
Field effect transistor with first and second drain electrodes |
Nov. 14, 2000 |
| 6134424 |
High-frequency power amplifier and mobile communication device using same |
Oct. 17, 2000 |
| 6121153 |
Semiconductor device having a regrowth crystal region |
Sep. 19, 2000 |
| 6078071 |
High-speed compound semiconductor device having an improved gate structure |
Jun. 20, 2000 |
| 6037200 |
Compound semiconductor device and fabrication method |
Mar. 14, 2000 |
| 5982036 |
Multi-layered structure for ohmic electrode fabrication |
Nov. 9, 1999 |
| 5925903 |
Field-effect transistors and method of manufacturing the same |
Jul. 20, 1999 |
| 5907177 |
Semiconductor device having a tapered gate electrode |
May. 25, 1999 |
| 5891757 |
Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer |
Apr. 6, 1999 |
| 5888859 |
Method of fabricating semiconductor device |
Mar. 30, 1999 |
| 5880483 |
Semiconductor devices |
Mar. 9, 1999 |
| 5874753 |
Field effect transistor |
Feb. 23, 1999 |
| 5837570 |
Heterostructure semiconductor device and method of fabricating same |
Nov. 17, 1998 |
| 5818078 |
Semiconductor device having a regrowth crystal region |
Oct. 6, 1998 |
| 5808332 |
Field-effect semiconductor device |
Sep. 15, 1998 |
| 5767007 |
Method for fabricating ohmic electrode and multi-layered structure for ohmic fabricating electrode |
Jun. 16, 1998 |
| 5728611 |
Method of fabricating semiconductor device |
Mar. 17, 1998 |
| 5698868 |
High-speed heterojunction transistor |
Dec. 16, 1997 |
| 5693969 |
MESFET having a termination layer in the channel layer |
Dec. 2, 1997 |
| 5688703 |
Method of manufacturing a gate structure for a metal semiconductor field effect transistor |
Nov. 18, 1997 |
| 5672890 |
Field effect transistor with lightly doped drain regions |
Sep. 30, 1997 |
| 5652451 |
Recessed gate field effect transistor |
Jul. 29, 1997 |
| 5648668 |
High breakdown voltage field effect transistor |
Jul. 15, 1997 |
| 5640029 |
Field-effect transistor and method of producing same |
Jun. 17, 1997 |
| 5631175 |
Method for fabricating an elevated-gate field effect transistor |
May. 20, 1997 |
| 5621228 |
Heterojunction field effect transistor with non-alloy ohmic contact electrodes |
Apr. 15, 1997 |
| 5606184 |
Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making |
Feb. 25, 1997 |
| 5591994 |
Compound semiconductor field effect transistor having a controlled diffusion profile of impurity elements |
Jan. 7, 1997 |
| 5585289 |
Method of producing metal semiconductor field effect transistor |
Dec. 17, 1996 |
| 5580803 |
Production method for ion-implanted MESFET having self-aligned lightly doped drain structure and T-type gate |
Dec. 3, 1996 |
| 5565696 |
Planar ion-implanted GaAs MESFETS with improved open-channel burnout characteristics |
Oct. 15, 1996 |
| 5557141 |
Method of doping, semiconductor device, and method of fabricating semiconductor device |
Sep. 17, 1996 |
| 5536666 |
Method for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristics |
Jul. 16, 1996 |
| 5532507 |
MES field effect transistor possessing lightly doped drain |
Jul. 2, 1996 |
| 5523593 |
Compound semiconductor integrated circuit and optical regenerative repeater using the same |
Jun. 4, 1996 |
| 5512499 |
Method of making symmetrical and asymmetrical MESFETS |
Apr. 30, 1996 |
| 5510280 |
Method of making an asymmetrical MESFET having a single sidewall spacer |
Apr. 23, 1996 |
| 5508539 |
Elevated-gate field effect transistor structure and fabrication method |
Apr. 16, 1996 |
| 5504352 |
Semiconductor MESFET device with edge portion |
Apr. 2, 1996 |
| 5489549 |
Method of fabricating n-type antimony-based strained layer superlattice |
Feb. 6, 1996 |
| 5486710 |
Field effect transistor |
Jan. 23, 1996 |
| 5482875 |
Method for forming a linear heterojunction field effect transistor |
Jan. 9, 1996 |
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