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Class Information
Number: 257/E29.04
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Source or drain regions of field-effect devices (epo) > Of field-effect transistors with insulated gate (epo)
Description: This subclass is indented under subclass E29.039. This subclass is substantially the same in scope as ECLA classification H01L29/08E2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8674449 Semiconductor device and method for manufacturing the same Mar. 18, 2014
8659059 Strained transistor structure Feb. 25, 2014
8648445 Metal-oxide-semiconductor device having trenched diffusion region and method of forming same Feb. 11, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8525147 Semiconductor devices including a transistor with elastic channel Sep. 3, 2013
8445893 High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes May. 21, 2013
8362530 Semiconductor device including MISFET and its manufacture method Jan. 29, 2013
8324690 Semiconductor device with multi-functional dielectric layer Dec. 4, 2012
8304307 Method of fabricating different gate oxides for different transistors in an integrated circuit Nov. 6, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8288830 Semiconductor device and method of manufacturing the same Oct. 16, 2012
8242556 Vertical and trench type insulated gate MOS semiconductor device Aug. 14, 2012
8237233 Field effect transistor having a gate structure with a first section above a center portion of the channel region and having a first effective work function and second sections above edges of Aug. 7, 2012
8212329 Short channel lateral MOSFET and method Jul. 3, 2012
8187943 MOS device resistant to ionizing radiation May. 29, 2012
8133789 Short-channel silicon carbide power mosfet Mar. 13, 2012
8120073 Trigate transistor having extended metal gate electrode Feb. 21, 2012
8102006 Different gate oxides thicknesses for different transistors in an integrated circuit Jan. 24, 2012
8080839 Electro-mechanical transistor Dec. 20, 2011
8049279 Semiconductor device and method for fabricating the same Nov. 1, 2011
7923788 Semiconductor device Apr. 12, 2011
7915685 Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates Mar. 29, 2011
7915682 Semiconductor FinFET structures with encapsulated gate electrodes and methods for forming such semiconductor FinFET structures Mar. 29, 2011
7910950 High voltage ESD LDMOS-SCR with gate reference voltage Mar. 22, 2011
7902635 High-power-gain, bipolar transistor amplifier Mar. 8, 2011
7872315 Electronic switching device Jan. 18, 2011
7851889 MOSFET device including a source with alternating P-type and N-type regions Dec. 14, 2010
7851329 Semiconductor device having EDMOS transistor and method for manufacturing the same Dec. 14, 2010
7851314 Short channel lateral MOSFET and method Dec. 14, 2010
7843032 Radio frequency identification device electrostatic discharge management Nov. 30, 2010
7791147 MOS device resistant to ionizing radiation Sep. 7, 2010
7786535 Design structures for high-voltage integrated circuits Aug. 31, 2010
7781842 Semiconductor device and method for producing it Aug. 24, 2010
7772651 Semiconductor-on-insulator high-voltage device structures, methods of fabricating such device structures, and design structures for high-voltage circuits Aug. 10, 2010
7768035 Semiconductor device and method of manufacturing the same Aug. 3, 2010
7737490 Vertical and trench type insulated gate MOS semiconductor device Jun. 15, 2010
7727838 Method to improve transistor Tox using high-angle implants with no additional masks Jun. 1, 2010
7718480 ESD clamps and NMOS arrays with increased electrical overstress robustness May. 18, 2010
7608515 Diffusion layer for stressed semiconductor devices Oct. 27, 2009
7605427 Field plate trench transistor Oct. 20, 2009
7557394 High-voltage transistor fabrication with trench etching technique Jul. 7, 2009
7547949 Semiconductor structures and memory device constructions Jun. 16, 2009
7544558 Method for integrating DMOS into sub-micron CMOS process Jun. 9, 2009
7531878 Semiconductor MIS transistor formed on SOI semiconductor substrate May. 12, 2009
7446373 Semiconductor component and method for producing it Nov. 4, 2008
7439593 Semiconductor device having silicide formed with blocking insulation layer Oct. 21, 2008
7385237 Fin field effect transistors with low resistance contact structures Jun. 10, 2008
7358567 High-voltage MOS device and fabrication thereof Apr. 15, 2008
7355253 Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates Apr. 8, 2008
7307314 LDMOS transistor with improved gate shield Dec. 11, 2007

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