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Class Information
Number: 257/E29.04
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Source or drain regions of field-effect devices (epo) > Of field-effect transistors with insulated gate (epo)
Description: This subclass is indented under subclass E29.039. This subclass is substantially the same in scope as ECLA classification H01L29/08E2.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608515 |
Diffusion layer for stressed semiconductor devices |
Oct. 27, 2009 |
| 7605427 |
Field plate trench transistor |
Oct. 20, 2009 |
| 7557394 |
High-voltage transistor fabrication with trench etching technique |
Jul. 7, 2009 |
| 7547949 |
Semiconductor structures and memory device constructions |
Jun. 16, 2009 |
| 7544558 |
Method for integrating DMOS into sub-micron CMOS process |
Jun. 9, 2009 |
| 7531878 |
Semiconductor MIS transistor formed on SOI semiconductor substrate |
May. 12, 2009 |
| 7446373 |
Semiconductor component and method for producing it |
Nov. 4, 2008 |
| 7439593 |
Semiconductor device having silicide formed with blocking insulation layer |
Oct. 21, 2008 |
| 7385237 |
Fin field effect transistors with low resistance contact structures |
Jun. 10, 2008 |
| 7358567 |
High-voltage MOS device and fabrication thereof |
Apr. 15, 2008 |
| 7355253 |
Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
Apr. 8, 2008 |
| 7307314 |
LDMOS transistor with improved gate shield |
Dec. 11, 2007 |
| 7304347 |
Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands |
Dec. 4, 2007 |
| 7253472 |
Method of fabricating semiconductor device employing selectivity poly deposition |
Aug. 7, 2007 |
| 7122831 |
Method of forming a reflective electrode and a liquid crystal display device |
Oct. 17, 2006 |
| 7071527 |
Semiconductor element and manufacturing method thereof |
Jul. 4, 2006 |
| 7067363 |
Vertical-conduction and planar-structure MOS device with a double thickness of gate oxide and method for realizing power vertical MOS transistors with improved static and dynamic performances |
Jun. 27, 2006 |
| 7067870 |
Power semiconductor switching element |
Jun. 27, 2006 |
| 7064384 |
Semiconductor device |
Jun. 20, 2006 |
| 7064385 |
DMOS-transistor with lateral dopant gradient in drift region and method of producing the same |
Jun. 20, 2006 |
| 7060545 |
Method of making truncated power enhanced drift lateral DMOS device with ground strap |
Jun. 13, 2006 |
| 7061047 |
Semiconductor device having trench gate structure and manufacturing method thereof |
Jun. 13, 2006 |
| 7061048 |
Power MOSFET device |
Jun. 13, 2006 |
| 7061066 |
Schottky diode using charge balance structure |
Jun. 13, 2006 |
| 7052963 |
Method of forming trench transistor with chained implanted body including a plurality of implantation with different energies |
May. 30, 2006 |
| 7045426 |
Vertical type power MOSFET having trenched gate structure |
May. 16, 2006 |
| 7041559 |
Methods of forming power semiconductor devices having laterally extending base shielding regions |
May. 9, 2006 |
| 7038274 |
Switching regulator with high-side p-type device |
May. 2, 2006 |
| 7038275 |
Buried-gate-type semiconductor device |
May. 2, 2006 |
| 7033876 |
Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same |
Apr. 25, 2006 |
| 7034346 |
Semiconductor device and method for manufacturing the same |
Apr. 25, 2006 |
| 7019358 |
High voltage semiconductor device having an increased breakdown voltage relative to its on-resistance |
Mar. 28, 2006 |
| 7012005 |
Self-aligned differential oxidation in trenches by ion implantation |
Mar. 14, 2006 |
| 7008865 |
Method of manufacturing a semiconductor device having a high breakdown voltage and low on-resistance |
Mar. 7, 2006 |
| 7009247 |
Trench MIS device with thick oxide layer in bottom of gate contact trench |
Mar. 7, 2006 |
| 7009261 |
Semiconductor device and method of manufacturing the same |
Mar. 7, 2006 |
| 6995426 |
Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type |
Feb. 7, 2006 |
| 6995432 |
Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions |
Feb. 7, 2006 |
| 6991977 |
Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
Jan. 31, 2006 |
| 6992362 |
Semiconductor with high-voltage components and low-voltage components on a shared die |
Jan. 31, 2006 |
| 6989567 |
LDMOS transistor |
Jan. 24, 2006 |
| 6989568 |
Lateral high-breakdown-voltage transistor having drain contact region |
Jan. 24, 2006 |
| 6979864 |
Semiconductor device and method for fabricating such device |
Dec. 27, 2005 |
| 6977414 |
Semiconductor device |
Dec. 20, 2005 |
| 6974997 |
High-voltage MOS transistor |
Dec. 13, 2005 |
| 6975004 |
Semiconductor component with optimized current density |
Dec. 13, 2005 |
| 6972231 |
Rad Hard MOSFET with graded body diode junction and reduced on resistance |
Dec. 6, 2005 |
| 6963094 |
Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regio |
Nov. 8, 2005 |
| 6958275 |
MOSFET power transistors and methods |
Oct. 25, 2005 |
| 6958515 |
N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects |
Oct. 25, 2005 |
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