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Class Information
Number: 257/E29.039
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Source or drain regions of field-effect devices (epo)
Description: This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08E.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.04 Of field-effect transistors with insulated gate (epo) 1,042
257/E29.041 Of field-effect transistors with schottky gate (epo) 125

Patents under this class:
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Patent Number Title Of Patent Date Issued
8569843 Semiconductor device Oct. 29, 2013
8558304 Methods and devices for forming nanostructure monolayers and devices including such monolayers Oct. 15, 2013
8546857 Semiconductor structure and method for forming the same Oct. 1, 2013
8441000 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 14, 2013
8344463 Bidirectional switch Jan. 1, 2013
8288805 Semiconductor device with gate-undercutting recessed region Oct. 16, 2012
8143680 Gated diode with non-planar source region Mar. 27, 2012
8049254 Semiconductor device with gate-undercutting recessed region Nov. 1, 2011
7947557 Heterojunction tunneling field effect transistors, and methods for fabricating the same May. 24, 2011
7936042 Field effect transistor containing a wide band gap semiconductor material in a drain May. 3, 2011
7875915 Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process Jan. 25, 2011
7872315 Electronic switching device Jan. 18, 2011
7795689 Semiconductor device including a germanium silicide film on a selective epitaxial layer Sep. 14, 2010
7754571 Method for forming a strained channel in a semiconductor device Jul. 13, 2010
7750403 Semiconductor device and manufacturing method thereof Jul. 6, 2010
7732877 Gated diode with non-planar source region Jun. 8, 2010
7531849 High performance FET devices May. 12, 2009
7528453 Field effect transistor with local source/drain insulation and associated method of production May. 5, 2009
7071499 Heterojunction field effect type semiconductor device having high gate turn-on voltage and low on-resistance and its manufacturing method Jul. 4, 2006
6734496 Semiconductor device May. 11, 2004
6724040 Semiconductor device Apr. 20, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6700157 Semiconductor device Mar. 2, 2004
6639274 Semiconductor device Oct. 28, 2003
6627948 Vertical layer type semiconductor device Sep. 30, 2003
6566709 Semiconductor device May. 20, 2003
6476428 Field effect transistor, control method for controlling such a field effect transistor and a frequency mixer means including such a field effect transistor Nov. 5, 2002
6294818 Parallel-stripe type semiconductor device Sep. 25, 2001
6150200 Semiconductor device and method of making Nov. 21, 2000
6097063 Semiconductor device having a plurality of parallel drift regions Aug. 1, 2000
5534714 Integrated field effect transistor and resonant tunneling diode Jul. 9, 1996
5471073 Field effect transistor and method for producing the field effect transistor Nov. 28, 1995
5416040 Method of making an integrated field effect transistor and resonant tunneling diode May. 16, 1995
5317176 Power transistor having multifinger contacts May. 31, 1994
5132760 Electron wave deflection in modulation doped and other doped semiconductor structures Jul. 21, 1992
5111254 Floating gate array transistors May. 5, 1992
5041896 Symmetrical blocking high voltage semiconductor device and method of fabrication Aug. 20, 1991
5036017 Method of making asymmetrical field effect transistor Jul. 30, 1991
5026655 Process of fabricating a heterojunction field effect transistor Jun. 25, 1991
4977434 Field-effect semiconductor device comprising an ancillary electrode Dec. 11, 1990
4975750 Semiconductor device Dec. 4, 1990
4952990 Gate turn-off power semiconductor component Aug. 28, 1990
4907045 Resonant-tunneling functional device using multiple negative differential resistances Mar. 6, 1990
4893155 Heterojunction field effect transistor device and process of fabrication thereof Jan. 9, 1990
4876580 Tunnel injection controlling type semiconductor device controlled by static induction effect Oct. 24, 1989
4870469 Tunnel injection type static transistor and its integrated circuit Sep. 26, 1989
4866488 Ballistic transport filter and device Sep. 12, 1989
4799090 Tunnel injection controlling type semiconductor device controlled by static induction effect Jan. 17, 1989
4792832 Superlattice semiconductor having high carrier density Dec. 20, 1988
4700461 Process for making junction field-effect transistors Oct. 20, 1987

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