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Class Information
Number: 257/E29.038
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Anode or cathode regions of thyristors or gated bipolar-mode devices (epo) > Cathode regions of thyristors (epo)
Description: This subclass is indented under subclass E29.036. This subclass is substantially the same in scope as ECLA classification H01L29/08D3.










Patents under this class:
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Patent Number Title Of Patent Date Issued
4414559 Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions Nov. 8, 1983
4302763 Semiconductor device Nov. 24, 1981
4298882 Multilayer semiconductor element Nov. 3, 1981
4281336 Thyristor element with short turn-off time and method for producing such element Jul. 28, 1981
4223332 Thyristor having an anode transverse field emitter Sep. 16, 1980
4219832 Thyristor having low on-state voltage with low areal doping emitter region Aug. 26, 1980
4210924 Semiconductor controlled rectifier with configured cathode to eliminate hot-spots Jul. 1, 1980
4163241 Multiple emitter and normal gate semiconductor switch Jul. 31, 1979
4150390 Thyristor with gate and emitter shunts distributed over the cathode surface Apr. 17, 1979
4092703 Gate controlled semiconductor device May. 30, 1978
4080620 Reverse switching rectifier and method for making same Mar. 21, 1978
4079406 Thyristor having a plurality of emitter shorts in defined spacial relationship Mar. 14, 1978
4072980 Thyristor Feb. 7, 1978
4063277 Semiconductor thyristor devices having breakover protection Dec. 13, 1977
4063278 Semiconductor switch having sensitive gate characteristics at high temperatures Dec. 13, 1977
4043837 Low forward voltage drop thyristor Aug. 23, 1977
4035825 Thyristor with branched base Jul. 12, 1977
4032957 Semiconductor device Jun. 28, 1977
4032956 Transistor circuit Jun. 28, 1977
4032958 Semiconductor device Jun. 28, 1977
4007474 Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion Feb. 8, 1977
3990091 Low forward voltage drop thyristor Nov. 2, 1976

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