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Class Information
Number: 257/E29.038
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Anode or cathode regions of thyristors or gated bipolar-mode devices (epo) > Cathode regions of thyristors (epo)
Description: This subclass is indented under subclass E29.036. This subclass is substantially the same in scope as ECLA classification H01L29/08D3.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7705368 Insulated gate type thyristor Apr. 27, 2010
7242036 Semiconductor element Jul. 10, 2007
6930353 Field-effect-type semiconductor device Aug. 16, 2005
6919248 Angled implant for shorter trench emitter Jul. 19, 2005
6809349 Power semiconductor device Oct. 26, 2004
6774733 Frequency variable oscillation circuit Aug. 10, 2004
6608349 Narrow/short high performance MOSFET device design Aug. 19, 2003
6518101 Multi-layer diodes and method of producing same Feb. 11, 2003
6164781 High temperature transistor with reduced risk of electromigration and differently shaped electrodes Dec. 26, 2000
6107651 Gate turn-off thyristor with stop layer Aug. 22, 2000
6078065 Bilaterally controllable thyristor Jun. 20, 2000
5981982 Dual gated power electronic switching devices Nov. 9, 1999
5970324 Methods of making dual gated power electronic switching devices Oct. 19, 1999
5852381 Turbine engine ignition exciter circuit including low voltage lockout control Dec. 22, 1998
5731605 Turn-off power semiconductor component with a particular ballast resistor structure Mar. 24, 1998
5656966 Turbine engine ignition exciter circuit including low voltage lockout control Aug. 12, 1997
5616938 MOS-controlled power semiconductor component for high voltages Apr. 1, 1997
5592118 Ignition exciter circuit with thyristors having high di/dt and high voltage blockage Jan. 7, 1997
5491351 Gate turn-off thyristor Feb. 13, 1996
5471075 Dual-channel emitter switched thyristor with trench gate Nov. 28, 1995
5387805 Field controlled thyristor Feb. 7, 1995
5345095 Self arc-extinguishing thyristor and method of manufacturing the same Sep. 6, 1994
5243201 MOS-controlled thyristor MCT Sep. 7, 1993
5210432 Insulated gate GTO thyristor May. 11, 1993
5144400 Power semiconductor device with switch-off facility Sep. 1, 1992
5142347 Power semiconductor component with emitter shorts Aug. 25, 1992
5065211 Thyristor having cathode shorts Nov. 12, 1991
5057440 Manufacturing gate turn-off thyristor having the cathode produced in two diffusion steps Oct. 15, 1991
4910573 Gate turn-off thyristor and method of producing same Mar. 20, 1990
4903105 Thyristor or triac with emitter shorting stripes Feb. 20, 1990
4862239 Power semiconductor component Aug. 29, 1989
4811072 Semiconductor device Mar. 7, 1989
4803538 Thyristor with adjustable base-to-emitter resistance Feb. 7, 1989
4792839 Semiconductor power circuit breaker structure obviating secondary breakdown Dec. 20, 1988
4760438 Thyristor emitter short configuration Jul. 26, 1988
4758871 Thyristor with multiple groups of insulated control electrodes Jul. 19, 1988
4757025 Method of making gate turn off switch with anode short and buried base Jul. 12, 1988
4743950 Thyristor with switchable emitter short circuit May. 10, 1988
4717940 MIS controlled gate turn-off thyristor Jan. 5, 1988
4651189 Semiconductor device provided with electrically floating control electrode Mar. 17, 1987
4623910 Semiconductor device Nov. 18, 1986
4614962 Controlled electronic switching device for the suppression of transients Sep. 30, 1986
4607273 Power semiconductor device Aug. 19, 1986
4581626 Thyristor cathode and transistor emitter structures with insulator islands Apr. 8, 1986
4500902 FET Controlled thyristor Feb. 19, 1985
4500903 Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length Feb. 19, 1985
4486768 Amplified gate turn-off thyristor Dec. 4, 1984
4445133 Semiconductor device Apr. 24, 1984
4419683 Thyristor having a controllable emitter short circuit Dec. 6, 1983

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