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Class Information
Number: 257/E29.037
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Anode or cathode regions of thyristors or gated bipolar-mode devices (epo) > Anode regions of thyristors or gated bipolar-mode devices (epo)
Description: This subclass is indented under subclass E29.036. This subclass is substantially the same in scope as ECLA classification H01L29/08D2.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8598621 Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access tra Dec. 3, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7902634 Semiconductor device Mar. 8, 2011
7745906 Semiconductor device having spaced unit regions and heavily doped semiconductor layer Jun. 29, 2010
7705368 Insulated gate type thyristor Apr. 27, 2010
7385254 Structure for protection against radio disturbances Jun. 10, 2008
7339203 Thyristor and method of manufacture Mar. 4, 2008
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent Oct. 2, 2007
7112868 IGBT with monolithic integrated antiparallel diode Sep. 26, 2006
7064384 Semiconductor device Jun. 20, 2006
7052954 Method of fabricating a MOS structure with two conductive layers on the gate electrode May. 30, 2006
6967356 Vertical component with high-voltage strength Nov. 22, 2005
6921941 High withstand voltage field effect semiconductor device with a field dispersion region Jul. 26, 2005
6917060 Lateral semiconductor device and vertical semiconductor device Jul. 12, 2005
6914298 Double diffusion MOSFET with N+ and P+ type regions at an equal potential Jul. 5, 2005
6828176 Thyristor having a first emitter with relatively lightly doped portion to the base Dec. 7, 2004
6784465 Vertical power component manufacturing method Aug. 31, 2004
6777747 Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability Aug. 17, 2004
6734497 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device May. 11, 2004
6730963 Minimum sized cellular MOS-gated device geometry May. 4, 2004
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6703646 Thyristor with lightly-doped emitter Mar. 9, 2004
6683331 Trench IGBT Jan. 27, 2004
6661054 Semiconductor device and method of fabricating the same Dec. 9, 2003
6650001 Lateral semiconductor device and vertical semiconductor device Nov. 18, 2003
6617641 High voltage semiconductor device capable of increasing a switching speed Sep. 9, 2003
6579782 Vertical power component manufacturing method Jun. 17, 2003
6524894 Semiconductor device for use in power-switching device and method of manufacturing the same Feb. 25, 2003
6509610 Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area Jan. 21, 2003
6501099 Modified-anode gate turn-off thyristor Dec. 31, 2002
6492663 Universal source geometry for MOS-gated power devices Dec. 10, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6417542 Field effect-controlled, vertical semiconductor component Jul. 9, 2002
6414370 Semiconductor circuit preventing electromagnetic noise Jul. 2, 2002
6259123 High voltage power MOS device Jul. 10, 2001
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6204717 Semiconductor circuit and semiconductor device for use in equipment such as a power converting apparatus Mar. 20, 2001
6146947 Insulated gate type field effect transistor and method of manufacturing the same Nov. 14, 2000
6133591 Silicon-on-insulator (SOI) hybrid transistor device structure Oct. 17, 2000
6107651 Gate turn-off thyristor with stop layer Aug. 22, 2000
6104062 Semiconductor device having reduced effective substrate resistivity and associated methods Aug. 15, 2000
6051850 Insulated gate bipolar junction transistors having built-in freewheeling diodes therein Apr. 18, 2000
6040598 High-breakdown-voltage semiconductor apparatus Mar. 21, 2000
5981981 Semiconductor device including a bipolar structure Nov. 9, 1999
5969400 High withstand voltage semiconductor device Oct. 19, 1999
5923055 Controllable semiconductor component Jul. 13, 1999
5869358 Method for the production of a gate turn-off thyristor having an anode-side stop layer and a transparent anode emitter Feb. 9, 1999
5851857 High voltage power MOS device Dec. 22, 1998
5828101 Three-terminal semiconductor device and related semiconductor devices Oct. 27, 1998

1 2 3 4

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