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Class Information
Number: 257/E29.035
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Collector regions of bipolar transistors (epo) > Pedestal collectors (epo)
Description: This subclass is indented under subclass E29.034. This subclass is substantially the same in scope as ECLA classification H01L29/08C2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
7932156 Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layer Apr. 26, 2011
7250628 Memory devices and electronic systems comprising thyristors Jul. 31, 2007
6723610 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process Apr. 20, 2004
6436781 High speed and low parasitic capacitance semiconductor device and method for fabricating the same Aug. 20, 2002
6316818 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process Nov. 13, 2001
6265275 Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base Jul. 24, 2001
6177717 Low-noise vertical bipolar transistor and corresponding fabrication process Jan. 23, 2001
5880516 Semiconductor device utilizing a pedestal collector region and method of manufacturing the same Mar. 9, 1999
5508552 Transistors with multiple emitters, and transistors with substantially square base emitter junctions Apr. 16, 1996
5399509 Method of manufacturing a bipolar transistor Mar. 21, 1995
5387813 Transistors with emitters having at least three sides Feb. 7, 1995
5336909 Bipolar transistor with an improved collector structure Aug. 9, 1994
5336926 Bipolar junction exhibiting suppressed kirk effect Aug. 9, 1994
5321301 Semiconductor device Jun. 14, 1994
5319239 Polysilicon-collector-on-insulator polysilicon-emitter bipolar Jun. 7, 1994
5256896 Polysilicon-collector-on-insulator polysilicon-emitter bipolar transistor Oct. 26, 1993
5208169 Method of forming high voltage bipolar transistor for a BICMOS integrated circuit May. 4, 1993
5177582 CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same Jan. 5, 1993
5124775 Semiconductor device with oxide sidewall Jun. 23, 1992
5098638 Method of manufacturing a semiconductor device Mar. 24, 1992
5010026 Process for making bipolar transistor Apr. 23, 1991
4996581 Bipolar transistor Feb. 26, 1991
4994881 Bipolar transistor Feb. 19, 1991
4979008 Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components Dec. 18, 1990
4853342 Method of manufacturing semiconductor integrated circuit device having transistor Aug. 1, 1989
4811071 Vertical transistor structure Mar. 7, 1989
4510676 Method of fabricating a lateral PNP transistor Apr. 16, 1985
4380774 High-performance bipolar microwave transistor Apr. 19, 1983
4252581 Selective epitaxy method for making filamentary pedestal transistor Feb. 24, 1981











 
 
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