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Class Information
Number: 257/E29.033
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Emitter regions of bipolar transistors (epo) > Of heterojunction bipolar transistors (epo)
Description: This subclass is indented under subclass E29.03. This subclass is substantially the same in scope as ECLA classification H01L29/08B7.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8530933 Photo transistor Sep. 10, 2013
8519443 Method for making a heterojunction bipolar transistor Aug. 27, 2013
8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor May. 14, 2013
8390030 Nitride semiconductor device Mar. 5, 2013
8378457 Silicon-germanium heterojunction bipolar transistor Feb. 19, 2013
8350295 Device structure including high-thermal-conductivity substrate Jan. 8, 2013
8178946 Modulation doped super-lattice base for heterojunction bipolar transistors May. 15, 2012
7994541 Semiconductor device and metal line fabrication method of the same Aug. 9, 2011
7973358 Coupler structure Jul. 5, 2011
7923752 Thin-film crystal wafer having pn junction and method for fabricating the wafer Apr. 12, 2011
7872326 Array of vertical bipolar junction transistors, in particular selectors in a phase change memory device Jan. 18, 2011
7851319 Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing Dec. 14, 2010
7829917 Layout for self-aligned emitter-base processing Nov. 9, 2010
7737530 Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures Jun. 15, 2010
7714361 Bipolar junction transistor having a high germanium concentration in a silicon-germanium layer and a method for forming the bipolar junction transistor May. 11, 2010
7656002 Integrated bipolar transistor and field effect transistor Feb. 2, 2010
7638856 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process Dec. 29, 2009
7635879 InAlAsSb/InGaSb and InAlPSb/InGaSb heterojunction bipolar transistors Dec. 22, 2009
7618858 Method of fabricating a heterojunction bipolar transistor Nov. 17, 2009
7618872 Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures Nov. 17, 2009
7598148 Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor Oct. 6, 2009
7598539 Heterojunction bipolar transistor and method for making same Oct. 6, 2009
7576352 Method for producing compound semiconductor wafer and compound semiconductor device Aug. 18, 2009
7573080 Transient suppression semiconductor device Aug. 11, 2009
7569872 Bipolar transistors with low parasitic losses Aug. 4, 2009
7538364 Compound semiconductor FET May. 26, 2009
7485946 Transistor epitaxial wafer and transistor produced by using same Feb. 3, 2009
7396731 Method for preparing a non-self-aligned heterojunction bipolar transistor with a small emitter-to-base spacing Jul. 8, 2008
7388237 Local collector implant structure for heterojunction bipolar transistors Jun. 17, 2008
7368764 Heterojunction bipolar transistor and method to make a heterojunction bipolar transistor May. 6, 2008
7358545 Bipolar junction transistor Apr. 15, 2008
7285457 Heterojunction bipolar transistor and manufacturing method thereof Oct. 23, 2007
7271429 Nitride semiconductor device Sep. 18, 2007
7265394 Spin tunnel transistor Sep. 4, 2007
7224005 Heterojunction bipolar transistor structure May. 29, 2007
7214593 Passivation for improved bipolar yield May. 8, 2007
7190047 Transistors and methods for making the same Mar. 13, 2007
7067898 Semiconductor device having a self-aligned base contact and narrow emitter Jun. 27, 2006
7038250 Semiconductor device suited for a high frequency amplifier May. 2, 2006
7030462 Heterojunction bipolar transistor having specified lattice constants Apr. 18, 2006
7005723 Bipolar transistor and method of producing same Feb. 28, 2006
6924202 Heterojunction bipolar transistor with self-aligned emitter and sidewall base contact Aug. 2, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005
6914274 Thin-film semiconductor epitaxial substrate having boron containing interface layer between a collector layer and a sub-collector layer Jul. 5, 2005
6908804 Bipolar transistor, semiconductor device and method of manufacturing same Jun. 21, 2005
6858887 BJT device configuration and fabrication method with reduced emitter width Feb. 22, 2005
6822274 Heterojunction semiconductor device having an intermediate layer for providing an improved junction Nov. 23, 2004
6781165 Hetero-junction bipolar transistor with gold out-diffusion barrier made from InP or InGaP Aug. 24, 2004

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