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Class Information
Number: 257/E29.032
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Emitter regions of bipolar transistors (epo) > Noninterconnected multiemitter structures (epo)
Description: This subclass is indented under subclass E29.03. This subclass is substantially the same in scope as ECLA classification H01L29/08B5.










Patents under this class:

Patent Number Title Of Patent Date Issued
7897497 Overvoltage-protected light-emitting semiconductor device, and method of fabrication Mar. 1, 2011
7859082 Lateral bipolar transistor and method of production Dec. 28, 2010
6770953 Bipolar transistor Aug. 3, 2004
6700226 Multi-emitter bipolar transistor for bandgap reference circuits Mar. 2, 2004
6664609 High frequency differential amplification circuit with reduced parasitic capacitance Dec. 16, 2003
6503809 Method and system for emitter partitioning for SiGe RF power transistors Jan. 7, 2003
6236072 Method and system for emitter partitioning for SiGe RF power transistors May. 22, 2001
6043553 Multi-emitter bipolar transistor of a self-align type Mar. 28, 2000
5864152 Semiconductor memory and method of writing, reading, and sustaining data Jan. 26, 1999
5821148 Method of fabricating a segmented emitter low noise transistor Oct. 13, 1998
5723897 Segmented emitter low noise transistor Mar. 3, 1998
5608229 Quantum box semiconductor device Mar. 4, 1997
5594271 Load current detecting device including a multi-emitter bipolar transistor Jan. 14, 1997
5461245 Article comprising a bipolar transistor with floating base Oct. 24, 1995
5455449 Offset lattice bipolar transistor architecture Oct. 3, 1995
5455186 Method for manufacturing an offset lattice bipolar transistor Oct. 3, 1995
5374844 Bipolar transistor structure using ballast resistor Dec. 20, 1994
5296732 Bipolar transistor Mar. 22, 1994
5084751 Bipolar transistor Jan. 28, 1992
5032887 Bipolar power semiconductor device and process for its manufacture Jul. 16, 1991
5032886 High-frequency power transistor Jul. 16, 1991
5003370 High power frequency semiconductor device with improved thermal resistance Mar. 26, 1991
4864379 Bipolar transistor with field shields Sep. 5, 1989
4860078 High-frequency transistor with low internal capacitance and low thermal resistance Aug. 22, 1989
4835588 Transistor May. 30, 1989
4792839 Semiconductor power circuit breaker structure obviating secondary breakdown Dec. 20, 1988
4762804 Method of manufacturing a bipolar transistor having emitter series resistors Aug. 9, 1988
4680608 Semiconductor device Jul. 14, 1987
4626886 Power transistor Dec. 2, 1986
4618877 Power semiconductor device with mesa type structure Oct. 21, 1986
4613809 Quiescent current reduction in low dropout voltage regulators Sep. 23, 1986
4513306 Current ratioing device structure Apr. 23, 1985
4488349 Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization Dec. 18, 1984
4388755 Structure for and method of manufacturing a semiconductor device by the master slice method Jun. 21, 1983
4306246 Method for trimming active semiconductor devices Dec. 15, 1981
4296336 Switching circuit and method for avoiding secondary breakdown Oct. 20, 1981
4151542 Transistor Apr. 24, 1979
4136354 Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level Jan. 23, 1979
4054897 Semiconductor device with high frequency, high power output Oct. 18, 1977
3935587 High power, high frequency bipolar transistor with alloyed gold electrodes Jan. 27, 1976











 
 
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