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Class Information
Number: 257/E29.03
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo) > Emitter regions of bipolar transistors (epo)
Description: This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08B.


Sub-classes under this class:

Class Number Class Name Patents
257/E29.032 Noninterconnected multiemitter structures (epo) 38
257/E29.033 Of heterojunction bipolar transistors (epo) 70
257/E29.031 Of lateral transistors (epo) 17


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
7453117 Non-volatile semiconductor memory device Nov. 18, 2008
7439607 Beta control using a rapid thermal oxidation Oct. 21, 2008
7208387 Method for manufacturing compound semiconductor wafer and compound semiconductor device Apr. 24, 2007
7180157 Bipolar transistor with a very narrow emitter feature Feb. 20, 2007
7045876 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor May. 16, 2006
7041564 Method for fabricating a self-aligned bipolar transistor May. 9, 2006
7008852 Discontinuous dielectric interface for bipolar transistors Mar. 7, 2006
6989557 Bipolar junction transistor and fabricating method Jan. 24, 2006
6984872 Method for fabricating an NPN transistor in a BICMOS technology Jan. 10, 2006
6979626 Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure Dec. 27, 2005
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6972472 Quasi self-aligned single polysilicon bipolar active device with intentional emitter window undercut Dec. 6, 2005
6949437 Manufacturing method of semiconductor device including an anisotropic etching step Sep. 27, 2005
6939771 Discontinuous dielectric interface for bipolar transistors Sep. 6, 2005
6936519 Double polysilicon bipolar transistor and method of manufacture therefor Aug. 30, 2005
6917077 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode Jul. 12, 2005
6911368 Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement Jun. 28, 2005
6905935 Method for fabricating a vertical bipolar junction transistor Jun. 14, 2005
6900105 Semiconductor device and method of manufacture May. 31, 2005
6897546 Semiconductor device including a functional element having a PN junction May. 24, 2005
6894328 Self-aligned bipolar transistor having recessed spacers and method for fabricating same May. 17, 2005
6891250 Semiconductor device with bipolar transistor May. 10, 2005
6887765 Method for manufacturing a bipolar junction transistor May. 3, 2005
6867440 Self-aligned bipolar transistor without spacers and method for fabricating same Mar. 15, 2005
6858485 Method for creation of a very narrow emitter feature Feb. 22, 2005
6856000 Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies Feb. 15, 2005
6853017 Bipolar transistor structure with ultra small polysilicon emitter Feb. 8, 2005
6818492 Semiconductor device and manufacturing method thereof Nov. 16, 2004
6803642 Bipolar device having non-uniform depth base-emitter junction Oct. 12, 2004
6797580 Method for fabricating a bipolar transistor in a BiCMOS process and related structure Sep. 28, 2004
6797578 Method for fabrication of emitter of a transistor and related structure Sep. 28, 2004
6794730 High performance PNP bipolar device fully compatible with CMOS process Sep. 21, 2004
6784467 Method for fabricating a self-aligned bipolar transistor and related structure Aug. 31, 2004
6784065 Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor Aug. 31, 2004
6765243 HBT having a controlled emitter window opening Jul. 20, 2004
6764913 Method for controlling an emitter window opening in an HBT and related structure Jul. 20, 2004
6759731 Bipolar junction transistor and fabricating method Jul. 6, 2004
6740563 Amorphizing ion implant method for forming polysilicon emitter bipolar transistor May. 25, 2004
6734073 Method for manufacturing a bipolar junction transistor May. 11, 2004
6730981 Bipolar transistor with inclined epitaxial layer May. 4, 2004
6703283 Discontinuous dielectric interface for bipolar transistors Mar. 9, 2004
6686251 Method for fabricating a bipolar transistor having self-aligned emitter and base Feb. 3, 2004
6682992 Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures Jan. 27, 2004
6657281 Bipolar transistor with a low K material in emitter base spacer regions Dec. 2, 2003
6586307 Method for controlling an emitter window opening in an HBT and related structure Jul. 1, 2003
6541336 Method of fabricating a bipolar transistor having a realigned emitter Apr. 1, 2003
6475887 Method of manufacturing semiconductor device Nov. 5, 2002
6468871 Method of forming bipolar transistor salicided emitter using selective laser annealing Oct. 22, 2002
6451660 Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water Sep. 17, 2002
6448125 Electronic power device integrated on a semiconductor material and related manufacturing process Sep. 10, 2002

1 2 3 4 5


 
 
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