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Class Information
Number:
257/E29.029
Name:
Active solid-state devices (e.g., transistors, solid-state diodes)
>
Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo)
>
Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo)
>
Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo)
> With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (epo)
Description:
This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/08.
Sub-classes under this class:
Class Number
Class Name
Patents
257/E29.036
Anode or cathode regions of thyristors or gated bipolar-mode devices (epo)
8
257/E29.034
Collector regions of bipolar transistors (epo)
248
257/E29.03
Emitter regions of bipolar transistors (epo)
216
257/E29.039
Source or drain regions of field-effect devices (epo)
48
257/E29.042
Tunneling barrier (epo)
50
Patents under this class:
Patent Number
Title Of Patent
Date Issued
7417302
Semiconductor device and method of manufacturing the same
Aug. 26, 2008
7355258
Method and apparatus for bending electrostatic switch
Apr. 8, 2008
7332811
Integrated circuit interconnect
Feb. 19, 2008
5426326
Semiconductor device including arrangement for reducing junction degradation
Jun. 20, 1995
4728844
Piezoelectric transducer and components therefor
Mar. 1, 1988
4103245
Transistor amplifier for low level signal
Jul. 25, 1978
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