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Class Information
Number: 257/E29.027
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (epo) > Surface layout of device (epo) > Surface layout of mos gated device (e.g., dmosfet or igbt) (epo)
Description: This subclass is indented under subclass E29.026. This subclass is substantially the same in scope as ECLA classification H01L29/06D3B.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.028 With a nonplanar gate structure (epo) 216


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11

Patent Number Title Of Patent Date Issued
8710542 Semiconductor device Apr. 29, 2014
8704298 MOS diode with termination structure and method for manufacturing the same Apr. 22, 2014
8704328 High-voltage integrated circuit device Apr. 22, 2014
8692350 Semiconductor device and method of manufacturing the same Apr. 8, 2014
8664727 Semiconductor integrated circuit device Mar. 4, 2014
8659079 Transistor device and method for manufacturing the same Feb. 25, 2014
8643136 High voltage device and manufacturing method thereof Feb. 4, 2014
8637928 Semiconductor device Jan. 28, 2014
8637955 Semiconductor structure with reduced junction leakage and method of fabrication thereof Jan. 28, 2014
8614490 Semiconductor device Dec. 24, 2013
8592904 Semiconductor device including Schottky barrier diode Nov. 26, 2013
8587057 Metal oxide semiconductor field transistor Nov. 19, 2013
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8558287 Apparatus and method for introducing a controllable delay to an input signal Oct. 15, 2013
8546878 Semiconductor device incorporating charge balancing Oct. 1, 2013
8507988 High voltage devices, systems, and methods for forming the high voltage devices Aug. 13, 2013
8501561 Method for producing a semiconductor component arrangement comprising a trench transistor Aug. 6, 2013
8487375 Semiconductor device and method of manufacturing semiconductor device Jul. 16, 2013
8471320 Memory layout structure Jun. 25, 2013
8471329 Tunnel FET and methods for forming the same Jun. 25, 2013
8450793 Semiconductor module May. 28, 2013
8421157 Semiconductor device Apr. 16, 2013
8377755 Method for fabricating SOI high voltage power chip with trenches Feb. 19, 2013
8378428 Metal gate structure of a semiconductor device Feb. 19, 2013
8367532 Semiconductor device and fabrication method Feb. 5, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8343862 Semiconductor device with a field stop zone and process of producing the same Jan. 1, 2013
8324669 Process for manufacturing a MOS device with intercell ion implant confined to the gate electrode region Dec. 4, 2012
8310006 Devices, structures, and methods using self-aligned resistive source extensions Nov. 13, 2012
8304842 Interconnection structure for N/P metal gates Nov. 6, 2012
8299539 Semiconductor device having IGBT and FWD on same substrate Oct. 30, 2012
8294203 Contacting and filling deep-trench-isolation with tungsten Oct. 23, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8274095 Semiconductor device Sep. 25, 2012
8258583 Conductive channel pseudo block process and circuit to inhibit reverse engineering Sep. 4, 2012
8222693 Trench-gate transistors and their manufacture Jul. 17, 2012
8222681 Bipolar semiconductor device and manufacturing method Jul. 17, 2012
8198162 Semiconductor device and a method of manufacturing the same Jun. 12, 2012
8193563 High power device isolation and integration Jun. 5, 2012
8178947 Semiconductor device May. 15, 2012
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same May. 15, 2012
8169029 High voltage device with constant current source and manufacturing method thereof May. 1, 2012
8168480 Fabricating method for forming integrated structure of IGBT and diode May. 1, 2012
8159022 Robust semiconductor device with an emitter zone and a field stop zone Apr. 17, 2012
8129785 Semiconductor device Mar. 6, 2012
8120074 Bipolar semiconductor device and manufacturing method Feb. 21, 2012
8120098 Semiconductor device and power converter using the same Feb. 21, 2012
8110462 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection Feb. 7, 2012
8084865 Anchoring structure and intermeshing structure Dec. 27, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011

1 2 3 4 5 6 7 8 9 10 11










 
 
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