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Class Information
Number: 257/E29.026
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (epo) > Surface layout of device (epo)
Description: This subclass is indented under subclass E29.024. This subclass is substantially the same in scope as ECLA classification H01L29/06D3.

Sub-classes under this class:

Class Number Class Name Patents
257/E29.027 Surface layout of mos gated device (e.g., dmosfet or igbt) (epo) 528

Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
8680649 Multi-layer film capacitor with tapered film sidewalls Mar. 25, 2014
8664727 Semiconductor integrated circuit device Mar. 4, 2014
8637912 Vertical gate device with reduced word line resistivity Jan. 28, 2014
8629533 Pillars for vertical transistors Jan. 14, 2014
8618608 Lateral silicon controlled rectifier structure Dec. 31, 2013
8471320 Memory layout structure Jun. 25, 2013
8330246 Intermediate structures for forming circuits Dec. 11, 2012
8110462 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection Feb. 7, 2012
8026579 Silicon pillars for vertical transistors Sep. 27, 2011
7968972 High-frequency bipolar transistor and method for the production thereof Jun. 28, 2011
7863682 SIC semiconductor having junction barrier Schottky diode Jan. 4, 2011
7855419 ESD device layout for effectively reducing internal circuit area and avoiding ESD and breakdown damage and effectively protecting high voltage IC Dec. 21, 2010
7838931 High voltage semiconductor devices with Schottky diodes Nov. 23, 2010
7804135 Integrated semiconductor diode arrangement and integrated semiconductor component Sep. 28, 2010
7719088 High-frequency bipolar transistor May. 18, 2010
7700935 Non-volatile memory device and method of fabricating the same Apr. 20, 2010
7692268 Integrated circuit with bipolar transistor Apr. 6, 2010
7679166 Localized temperature control during rapid thermal anneal Mar. 16, 2010
7589361 Standard cells, LSI with the standard cells and layout design method for the standard cells Sep. 15, 2009
7473929 Semiconductor device and method for fabricating the same Jan. 6, 2009
7462917 Semiconductor device and method of fabricating the same Dec. 9, 2008
7385254 Structure for protection against radio disturbances Jun. 10, 2008
7163847 Method of making circuitized substrate Jan. 16, 2007
7091066 Method of making circuitized substrate Aug. 15, 2006
7087943 Direct alignment scheme between multiple lithography layers Aug. 8, 2006
7084014 Method of making circuitized substrate Aug. 1, 2006
7071527 Semiconductor element and manufacturing method thereof Jul. 4, 2006
7064408 Schottky barrier diode and method of making the same Jun. 20, 2006
7061059 Semiconductor device Jun. 13, 2006
7061067 Schottky barrier diode Jun. 13, 2006
7053404 Active semiconductor component with an optimized surface area May. 30, 2006
7045414 Method of fabricating high voltage transistor May. 16, 2006
7026668 High-breakdown-voltage semiconductor device Apr. 11, 2006
7026221 Method of forming semiconductor device with bipolar transistor having lateral structure Apr. 11, 2006
7019362 Power MOSFET with reduced dgate resistance Mar. 28, 2006
7015545 Split source RF MOSFET device Mar. 21, 2006
7012308 Diode Mar. 14, 2006
6989558 Field effect transistor Jan. 24, 2006
6984871 Semiconductor device with high structural reliability and low parasitic capacitance Jan. 10, 2006
6982473 Bipolar transistor Jan. 3, 2006
6979885 Devices with patterned wells and method for forming same Dec. 27, 2005
6977208 Schottky with thick trench bottom and termination oxide and process for manufacture Dec. 20, 2005
6974743 Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates Dec. 13, 2005
6943383 Diode and producing method thereof Sep. 13, 2005
6943387 Semiconductor device, manufacturing thereof and power amplifier module Sep. 13, 2005
6940131 MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication Sep. 6, 2005
6940357 Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line Sep. 6, 2005
6906356 High voltage switch Jun. 14, 2005
6900506 Method and structure for a high voltage junction field effect transistor May. 31, 2005
6900504 Integrated structure effective to form a MOS component in a dielectrically insulated well May. 31, 2005

1 2 3 4 5 6

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