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Class Information
Number: 257/E29.026
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (epo) > Surface layout of device (epo)
Description: This subclass is indented under subclass E29.024. This subclass is substantially the same in scope as ECLA classification H01L29/06D3.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7589361 |
Standard cells, LSI with the standard cells and layout design method for the standard cells |
Sep. 15, 2009 |
| 7473929 |
Semiconductor device and method for fabricating the same |
Jan. 6, 2009 |
| 7462917 |
Semiconductor device and method of fabricating the same |
Dec. 9, 2008 |
| 7385254 |
Structure for protection against radio disturbances |
Jun. 10, 2008 |
| 7163847 |
Method of making circuitized substrate |
Jan. 16, 2007 |
| 7091066 |
Method of making circuitized substrate |
Aug. 15, 2006 |
| 7087943 |
Direct alignment scheme between multiple lithography layers |
Aug. 8, 2006 |
| 7084014 |
Method of making circuitized substrate |
Aug. 1, 2006 |
| 7071527 |
Semiconductor element and manufacturing method thereof |
Jul. 4, 2006 |
| 7064408 |
Schottky barrier diode and method of making the same |
Jun. 20, 2006 |
| 7061067 |
Schottky barrier diode |
Jun. 13, 2006 |
| 7061059 |
Semiconductor device |
Jun. 13, 2006 |
| 7053404 |
Active semiconductor component with an optimized surface area |
May. 30, 2006 |
| 7045414 |
Method of fabricating high voltage transistor |
May. 16, 2006 |
| 7026668 |
High-breakdown-voltage semiconductor device |
Apr. 11, 2006 |
| 7026221 |
Method of forming semiconductor device with bipolar transistor having lateral structure |
Apr. 11, 2006 |
| 7019362 |
Power MOSFET with reduced dgate resistance |
Mar. 28, 2006 |
| 7015545 |
Split source RF MOSFET device |
Mar. 21, 2006 |
| 7012308 |
Diode |
Mar. 14, 2006 |
| 6989558 |
Field effect transistor |
Jan. 24, 2006 |
| 6984871 |
Semiconductor device with high structural reliability and low parasitic capacitance |
Jan. 10, 2006 |
| 6982473 |
Bipolar transistor |
Jan. 3, 2006 |
| 6979885 |
Devices with patterned wells and method for forming same |
Dec. 27, 2005 |
| 6977208 |
Schottky with thick trench bottom and termination oxide and process for manufacture |
Dec. 20, 2005 |
| 6974743 |
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates |
Dec. 13, 2005 |
| 6943387 |
Semiconductor device, manufacturing thereof and power amplifier module |
Sep. 13, 2005 |
| 6943383 |
Diode and producing method thereof |
Sep. 13, 2005 |
| 6940131 |
MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication |
Sep. 6, 2005 |
| 6940357 |
Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line |
Sep. 6, 2005 |
| 6906356 |
High voltage switch |
Jun. 14, 2005 |
| 6900504 |
Integrated structure effective to form a MOS component in a dielectrically insulated well |
May. 31, 2005 |
| 6900482 |
Semiconductor device having divided active regions with comb-teeth electrodes thereon |
May. 31, 2005 |
| 6900506 |
Method and structure for a high voltage junction field effect transistor |
May. 31, 2005 |
| 6891250 |
Semiconductor device with bipolar transistor |
May. 10, 2005 |
| 6888207 |
High voltage transistors with graded extension |
May. 3, 2005 |
| 6878999 |
Transistor with improved safe operating area |
Apr. 12, 2005 |
| 6867083 |
Method of forming a body contact of a transistor and structure therefor |
Mar. 15, 2005 |
| 6861723 |
Schottky diode having overcurrent protection and low reverse current |
Mar. 1, 2005 |
| 6861303 |
JFET structure for integrated circuit and fabrication method |
Mar. 1, 2005 |
| 6858884 |
Lateral semiconductor device |
Feb. 22, 2005 |
| 6855983 |
Semiconductor device having reduced on resistance |
Feb. 15, 2005 |
| 6855970 |
High-breakdown-voltage semiconductor device |
Feb. 15, 2005 |
| 6856004 |
Compact layout for a semiconductor device |
Feb. 15, 2005 |
| 6853048 |
Bipolar transistor having an isolation structure located under the base, emitter and collector and a method of manufacture thereof |
Feb. 8, 2005 |
| 6841810 |
Cell structure for bipolar integrated circuits and method |
Jan. 11, 2005 |
| 6841829 |
Self protecting bipolar SCR |
Jan. 11, 2005 |
| 6838348 |
Integrated process for high voltage and high performance silicon-on-insulator bipolar devices |
Jan. 4, 2005 |
| 6838709 |
Bipolar transistor |
Jan. 4, 2005 |
| 6838711 |
Power MOS arrays with non-uniform polygate length |
Jan. 4, 2005 |
| 6831337 |
Transistor circuit with varying resistance lightly doped diffused regions for electrostatic discharge ("ESD") protection |
Dec. 14, 2004 |
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