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Class Information
Number: 257/E29.025
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (epo) > Characterized by particular shape of junction between semiconductor regions (epo)
Description: This subclass is indented under subclass E29.024. This subclass is substantially the same in scope as ECLA classification H01L29/06D2.

Patents under this class:

Patent Number Title Of Patent Date Issued
8637955 Semiconductor structure with reduced junction leakage and method of fabrication thereof Jan. 28, 2014
8530943 Semiconductor device Sep. 10, 2013
8362575 Controlling the shape of source/drain regions in FinFETs Jan. 29, 2013
8330192 Method for modification of built in potential of diodes Dec. 11, 2012
8076724 Transistor structure having an active region and a dielectric platform region Dec. 13, 2011
8049279 Semiconductor device and method for fabricating the same Nov. 1, 2011
7880201 Optical modulator using a serpentine dielectric layer between silicon layers Feb. 1, 2011
7875511 CMOS structure including differential channel stressing layer compositions Jan. 25, 2011
7838962 Semiconductor device having capacitor, transistor and diffusion resistor and manufacturing method thereof Nov. 23, 2010
7825433 MIS-type semiconductor device Nov. 2, 2010
7541636 Memory cell comprising one MOS transistor with an isolated body having a reinforced memory effect Jun. 2, 2009
7029977 Fabrication method of semiconductor wafer Apr. 18, 2006
6693340 Lateral semiconductor device Feb. 17, 2004
5726481 Power semiconductor device having a temperature sensor Mar. 10, 1998
5408117 Semiconductor device and method of fabricating the same Apr. 18, 1995
5278095 Method for making passivated mesa semiconductor Jan. 11, 1994
5166769 Passitvated mesa semiconductor and method for making same Nov. 24, 1992
5136349 Closed cell transistor with built-in voltage clamp Aug. 4, 1992
5008720 Semiconductor device with stepped well Apr. 16, 1991
4980315 Method of making a passivated P-N junction in mesa semiconductor structure Dec. 25, 1990
4943835 Semiconductor device including protecting MOS transistor Jul. 24, 1990
4927772 Method of making high breakdown voltage semiconductor device May. 22, 1990
4821236 Semiconductor nonvolatile memory Apr. 11, 1989
4713679 Reverse blocking type semiconductor device Dec. 15, 1987
4672738 Method for the manufacture of a pn junction with high breakdown voltage Jun. 16, 1987
4648174 Method of making high breakdown voltage semiconductor device Mar. 10, 1987
4589002 Diode structure May. 13, 1986
4466171 Method of manufacturing a semiconductor device utilizing outdiffusion to convert an epitaxial layer Aug. 21, 1984
4262295 Semiconductor device Apr. 14, 1981
4258380 Bipolar transistor having an integrated resistive emitter zone Mar. 24, 1981
4225874 Semiconductor device having integrated diode Sep. 30, 1980
4204894 Process for fabrication of semiconductors utilizing selectively etchable diffusion sources in combination with melt-flow techniques May. 27, 1980
4158206 Semiconductor device Jun. 12, 1979
4157562 Gate controlled bidirectional semiconductor switching device having two base regions each having a different depth from an adjacent surface Jun. 5, 1979
4139935 Over voltage protective device and circuits for insulated gate transistors Feb. 20, 1979
4113516 Method of forming a curved implanted region in a semiconductor body Sep. 12, 1978
4089021 Semiconductor device capable of withstanding high voltage and method of manufacturing same May. 9, 1978
4079403 Thyristor device with self-protection against breakover turn-on failure Mar. 14, 1978
4066483 Gate-controlled bidirectional switching device Jan. 3, 1978
4035825 Thyristor with branched base Jul. 12, 1977
4032955 Deep diode transistor Jun. 28, 1977
3977910 Deep finger diodes Aug. 31, 1976

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