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Class Information
Number: 257/E29.023
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape of semiconductor body (epo) > Adapted for altering junction breakdown voltage by shape of semiconductor body (epo)
Description: This subclass is indented under subclass E29.022. This subclass is substantially the same in scope as ECLA classification H01L29/06C4.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5710442 Semiconductor device and method of manufacturing same Jan. 20, 1998
5686753 Schottky barrier diode having a mesa structure Nov. 11, 1997
5656966 Turbine engine ignition exciter circuit including low voltage lockout control Aug. 12, 1997
5592118 Ignition exciter circuit with thyristors having high di/dt and high voltage blockage Jan. 7, 1997
5399901 Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics Mar. 21, 1995
5346849 Method of making a groove structure for isolation between elements comprising a GTO thyristor Sep. 13, 1994
5313092 Semiconductor power device having walls of an inverted mesa shape to improve power handling capability May. 17, 1994
5281847 Groove structure for isolating elements comprising a GTO structure Jan. 25, 1994
5213994 Method of making high voltage semiconductor device May. 25, 1993
5164218 Semiconductor device and a method for producing the same Nov. 17, 1992
5132769 Semiconductor device with high withstand voltage Jul. 21, 1992
5110764 Method of making a beveled semiconductor silicon wafer May. 5, 1992
5100809 Method of manufacturing semiconductor device Mar. 31, 1992
5082793 Method for making solid state device utilizing ion implantation techniques Jan. 21, 1992
5081050 Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities Jan. 14, 1992
5049971 Monolithic high-frequency-signal switch and power limiter device Sep. 17, 1991
5045505 Method of processing substrate for a beveled semiconductor device Sep. 3, 1991
5021862 Beveled semiconductor silicon wafer and manufacturing method thereof Jun. 4, 1991
5010023 Method for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristics Apr. 23, 1991
5003368 Turn-off thyristor Mar. 26, 1991
4977107 Method for manufacturing semiconductor rectifier Dec. 11, 1990
4974050 High voltage semiconductor device and method Nov. 27, 1990
4946800 Method for making solid-state device utilizing isolation grooves Aug. 7, 1990
4916513 Dielectrically isolated integrated circuit structure Apr. 10, 1990
4891685 Rectifying P-N junction having improved breakdown voltage characteristics and method for fabricating same Jan. 2, 1990
4829348 Disconnectable power semiconductor component May. 9, 1989
4822757 Semiconductor device and method of manufacturing the same Apr. 18, 1989
4805004 Semiconductor device with a planar junction and self-passivating termination Feb. 14, 1989
4740477 Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics Apr. 26, 1988
4682198 Gate turn-off thyristor with integral capacitive anode Jul. 21, 1987
4680615 Silicon semiconductor component with an edge contour made by an etching technique, and method for manufacturing this component Jul. 14, 1987
4642669 Semiconductor device having a blocking capability in only one direction Feb. 10, 1987
4586070 Thyristor with abrupt anode emitter junction Apr. 29, 1986
4484214 pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth Nov. 20, 1984
4467343 Thyristor with a multi-layer semiconductor body with a pnpn layer sequence and a method for its manufacture with a {111} lateral edge bevelling Aug. 21, 1984
4450469 Mesa type semiconductor device with guard ring May. 22, 1984
4388635 High breakdown voltage semiconductor device Jun. 14, 1983
4374389 High breakdown voltage semiconductor device Feb. 15, 1983
4371406 Solid-state device Feb. 1, 1983
4298881 Semiconductor device with double moat and double channel stoppers Nov. 3, 1981
4255757 High reverse voltage semiconductor device with fast recovery time with central depression Mar. 10, 1981
4249195 Mesa-type transistor and method of producing same Feb. 3, 1981
4242690 High breakdown voltage semiconductor device Dec. 30, 1980
4238761 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode Dec. 9, 1980
4236169 Thyristor device Nov. 25, 1980
4228581 Method for producing semiconductor bodies having a defined edge profile which has been obtained by etching and is covered with a glass Oct. 21, 1980
4215358 Mesa type semiconductor device Jul. 29, 1980
4113516 Method of forming a curved implanted region in a semiconductor body Sep. 12, 1978
4110780 Semiconductor power component Aug. 29, 1978
4100564 Power transistor device Jul. 11, 1978

1 2 3

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