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Class Information
Number: 257/E29.023
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape of semiconductor body (epo) > Adapted for altering junction breakdown voltage by shape of semiconductor body (epo)
Description: This subclass is indented under subclass E29.022. This subclass is substantially the same in scope as ECLA classification H01L29/06C4.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7279768 |
Semiconductor device for overvoltage protection |
Oct. 9, 2007 |
| 7115946 |
MOS transistor having an offset region |
Oct. 3, 2006 |
| 7026668 |
High-breakdown-voltage semiconductor device |
Apr. 11, 2006 |
| 7009239 |
Vertical semiconductor device and manufacturing method thereof |
Mar. 7, 2006 |
| 6998315 |
Termination structure for trench DMOS device and method of making the same |
Feb. 14, 2006 |
| 6992363 |
Dielectric separation type semiconductor device and method of manufacturing the same |
Jan. 31, 2006 |
| 6927102 |
Semiconductor device and method of forming a semiconductor device |
Aug. 9, 2005 |
| 6921945 |
Semiconductor device with structure for improving breakdown voltage |
Jul. 26, 2005 |
| 6900523 |
Termination structure for MOSgated power devices |
May. 31, 2005 |
| 6900518 |
Semiconductor device |
May. 31, 2005 |
| 6855986 |
Termination structure for trench DMOS device and method of making the same |
Feb. 15, 2005 |
| 6855970 |
High-breakdown-voltage semiconductor device |
Feb. 15, 2005 |
| 6849918 |
Miniaturized dielectrically isolated solid state device |
Feb. 1, 2005 |
| 6825510 |
Termination structure incorporating insulator in a trench |
Nov. 30, 2004 |
| 6797992 |
Apparatus and method for fabricating a high reverse voltage semiconductor device |
Sep. 28, 2004 |
| 6696705 |
Power semiconductor component having a mesa edge termination |
Feb. 24, 2004 |
| 6693308 |
Power SiC devices having raised guard rings |
Feb. 17, 2004 |
| 6635944 |
Power semiconductor component having a PN junction with a low area edge termination |
Oct. 21, 2003 |
| 6489666 |
Semiconductor device with improved heat suppression in peripheral regions |
Dec. 3, 2002 |
| 6396090 |
Trench MOS device and termination structure |
May. 28, 2002 |
| 6309929 |
Method of forming trench MOS device and termination structure |
Oct. 30, 2001 |
| 6168978 |
Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate |
Jan. 2, 2001 |
| 6040617 |
Structure to provide junction breakdown stability for deep trench devices |
Mar. 21, 2000 |
| 6037632 |
Semiconductor device |
Mar. 14, 2000 |
| 6020603 |
Semiconductor device with a beveled and chamfered outer peripheral portion |
Feb. 1, 2000 |
| 5981982 |
Dual gated power electronic switching devices |
Nov. 9, 1999 |
| 5970324 |
Methods of making dual gated power electronic switching devices |
Oct. 19, 1999 |
| 5952679 |
Semiconductor substrate and method for straightening warp of semiconductor substrate |
Sep. 14, 1999 |
| 5950068 |
Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics |
Sep. 7, 1999 |
| 5949124 |
Edge termination structure |
Sep. 7, 1999 |
| 5930660 |
Method for fabricating diode with improved reverse energy characteristics |
Jul. 27, 1999 |
| 5852381 |
Turbine engine ignition exciter circuit including low voltage lockout control |
Dec. 22, 1998 |
| 5831291 |
Insulated gate bipolar transistors |
Nov. 3, 1998 |
| 5773874 |
Semiconductor device having a mesa structure for surface voltage breakdown |
Jun. 30, 1998 |
| 5766973 |
Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates |
Jun. 16, 1998 |
| 5710442 |
Semiconductor device and method of manufacturing same |
Jan. 20, 1998 |
| 5686753 |
Schottky barrier diode having a mesa structure |
Nov. 11, 1997 |
| 5656966 |
Turbine engine ignition exciter circuit including low voltage lockout control |
Aug. 12, 1997 |
| 5592118 |
Ignition exciter circuit with thyristors having high di/dt and high voltage blockage |
Jan. 7, 1997 |
| 5399901 |
Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics |
Mar. 21, 1995 |
| 5346849 |
Method of making a groove structure for isolation between elements comprising a GTO thyristor |
Sep. 13, 1994 |
| 5313092 |
Semiconductor power device having walls of an inverted mesa shape to improve power handling capability |
May. 17, 1994 |
| 5281847 |
Groove structure for isolating elements comprising a GTO structure |
Jan. 25, 1994 |
| 5213994 |
Method of making high voltage semiconductor device |
May. 25, 1993 |
| 5164218 |
Semiconductor device and a method for producing the same |
Nov. 17, 1992 |
| 5132769 |
Semiconductor device with high withstand voltage |
Jul. 21, 1992 |
| 5110764 |
Method of making a beveled semiconductor silicon wafer |
May. 5, 1992 |
| 5100809 |
Method of manufacturing semiconductor device |
Mar. 31, 1992 |
| 5082793 |
Method for making solid state device utilizing ion implantation techniques |
Jan. 21, 1992 |
| 5081050 |
Method of making a gate turn-off thyristor using a simultaneous diffusion of two different acceptor impurities |
Jan. 14, 1992 |
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