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Class Information
Number: 257/E29.023
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by shape of semiconductor body (epo) > Adapted for altering junction breakdown voltage by shape of semiconductor body (epo)
Description: This subclass is indented under subclass E29.022. This subclass is substantially the same in scope as ECLA classification H01L29/06C4.

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8642987 Semiconductor device and manufacturing method thereof Feb. 4, 2014
8643112 Semiconductor device Feb. 4, 2014
8552414 Electronically scannable multiplexing device Oct. 8, 2013
8431460 Method for fabricating semiconductor device Apr. 30, 2013
8294235 Edge termination with improved breakdown voltage Oct. 23, 2012
8110494 Systems and methods for maximizing breakdown voltage in semiconductor devices Feb. 7, 2012
7964910 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Jun. 21, 2011
7923804 Edge termination with improved breakdown voltage Apr. 12, 2011
7893497 Semiconductor device Feb. 22, 2011
7888767 Structures of high-voltage MOS devices with improved electrical performance Feb. 15, 2011
7821014 Semiconductor device and manufacturing method thereof with a recessed backside substrate for breakdown voltage blocking Oct. 26, 2010
7800196 Semiconductor structure with an electric field stop layer for improved edge termination capability Sep. 21, 2010
7777292 Semiconductor device Aug. 17, 2010
7755142 Thin-film transistor and image display device Jul. 13, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7279768 Semiconductor device for overvoltage protection Oct. 9, 2007
7115946 MOS transistor having an offset region Oct. 3, 2006
7026668 High-breakdown-voltage semiconductor device Apr. 11, 2006
7009239 Vertical semiconductor device and manufacturing method thereof Mar. 7, 2006
6998315 Termination structure for trench DMOS device and method of making the same Feb. 14, 2006
6992363 Dielectric separation type semiconductor device and method of manufacturing the same Jan. 31, 2006
6927102 Semiconductor device and method of forming a semiconductor device Aug. 9, 2005
6921945 Semiconductor device with structure for improving breakdown voltage Jul. 26, 2005
6900518 Semiconductor device May. 31, 2005
6900523 Termination structure for MOSgated power devices May. 31, 2005
6855986 Termination structure for trench DMOS device and method of making the same Feb. 15, 2005
6855970 High-breakdown-voltage semiconductor device Feb. 15, 2005
6849918 Miniaturized dielectrically isolated solid state device Feb. 1, 2005
6825510 Termination structure incorporating insulator in a trench Nov. 30, 2004
6797992 Apparatus and method for fabricating a high reverse voltage semiconductor device Sep. 28, 2004
6696705 Power semiconductor component having a mesa edge termination Feb. 24, 2004
6693308 Power SiC devices having raised guard rings Feb. 17, 2004
6635944 Power semiconductor component having a PN junction with a low area edge termination Oct. 21, 2003
6489666 Semiconductor device with improved heat suppression in peripheral regions Dec. 3, 2002
6396090 Trench MOS device and termination structure May. 28, 2002
6309929 Method of forming trench MOS device and termination structure Oct. 30, 2001
6168978 Method for producing a power semiconductor component on a two-sided substrate that blocks on both sides of the substrate Jan. 2, 2001
6040617 Structure to provide junction breakdown stability for deep trench devices Mar. 21, 2000
6037632 Semiconductor device Mar. 14, 2000
6020603 Semiconductor device with a beveled and chamfered outer peripheral portion Feb. 1, 2000
5981982 Dual gated power electronic switching devices Nov. 9, 1999
5970324 Methods of making dual gated power electronic switching devices Oct. 19, 1999
5952679 Semiconductor substrate and method for straightening warp of semiconductor substrate Sep. 14, 1999
5949124 Edge termination structure Sep. 7, 1999
5950068 Method of fabricating semiconductor devices having a mesa structure for improved surface voltage breakdown characteristics Sep. 7, 1999
5930660 Method for fabricating diode with improved reverse energy characteristics Jul. 27, 1999
5852381 Turbine engine ignition exciter circuit including low voltage lockout control Dec. 22, 1998
5831291 Insulated gate bipolar transistors Nov. 3, 1998
5773874 Semiconductor device having a mesa structure for surface voltage breakdown Jun. 30, 1998
5766973 Method for manufacturing a semiconductor arrangement by introducing crystal disorder structures and varying diffusion rates Jun. 16, 1998

1 2 3

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