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Class Information
Number: 257/E29.021
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > Comprising internal isolation within devices or components (epo) > Isolation by dielectric regions (epo) > For source or drain region of field-effect device (epo)
Description: This subclass is indented under subclass E29.02. This subclass is substantially the same in scope as ECLA classification H01L29/06B3C2.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8680608 Power semiconductor device with a low on resistence Mar. 25, 2014
8643136 High voltage device and manufacturing method thereof Feb. 4, 2014
8598670 Semiconductor device with increased breakdown voltage Dec. 3, 2013
8436403 Semiconductor device including transistor provided with sidewall and electronic appliance May. 7, 2013
8405153 Semiconductor device Mar. 26, 2013
8377767 Insulated gate field effect transistor having passivated schottky barriers to the channel Feb. 19, 2013
8362522 Semiconductor device and method for manufacturing the same Jan. 29, 2013
8202775 Process of forming an electronic device including a trench and a conductive structure therein Jun. 19, 2012
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same May. 15, 2012
8076716 Electronic device including a trench and a conductive structure therein Dec. 13, 2011
8049251 Semiconductor device and method for manufacturing the same Nov. 1, 2011
8022483 Semiconductor and manufacturing method for the same Sep. 20, 2011
7964910 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Jun. 21, 2011
7939881 Semiconductor device May. 10, 2011
7902017 Process of forming an electronic device including a trench and a conductive structure therein Mar. 8, 2011
7902606 Double gate depletion mode MOSFET Mar. 8, 2011
7884441 Semiconductor device having polysilicon bit line contact Feb. 8, 2011
7883980 Insulated gate field effect transistor having passivated schottky barriers to the channel Feb. 8, 2011
7875511 CMOS structure including differential channel stressing layer compositions Jan. 25, 2011
7868379 Electronic device including a trench and a conductive structure therein Jan. 11, 2011
7816756 Power semiconductor device Oct. 19, 2010
7808055 Methods and apparatus for semiconductor memory devices manufacturable using bulk CMOS process manufacturing Oct. 5, 2010
7791163 Semiconductor device and its manufacturing method Sep. 7, 2010
7772671 Semiconductor device having an element isolating insulating film Aug. 10, 2010
7755114 Semiconductor device and manufacturing method thereof Jul. 13, 2010
7737504 Well isolation trenches (WIT) for CMOS devices Jun. 15, 2010
7687847 Semiconductor device and fabricating method thereof Mar. 30, 2010
7687878 MOSFET device having screening layers formed between main gate and passing gate and method for manufacturing the same Mar. 30, 2010
7678641 Semiconductor device and fabrication process thereof Mar. 16, 2010
7678665 Deep STI trench and SOI undercut enabling STI oxide stressor Mar. 16, 2010
7589377 Gate structure with low resistance for high power semiconductor devices Sep. 15, 2009
7586151 Insulated gate semiconductor device Sep. 8, 2009
7554164 Semiconductor device having a gap between a gate electrode and a dummy gate electrode Jun. 30, 2009
7541645 Metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions Jun. 2, 2009
7531871 Power semiconductor switching element May. 12, 2009
7528453 Field effect transistor with local source/drain insulation and associated method of production May. 5, 2009
7507622 Semiconductor device and manufacturing method thereof Mar. 24, 2009
7485921 Trench gate type MOS transistor semiconductor device Feb. 3, 2009
7482656 Method and structure to form self-aligned selective-SOI Jan. 27, 2009
7411251 Self protecting NLDMOS, DMOS and extended voltage NMOS devices Aug. 12, 2008
7400031 Asymmetrically stressed CMOS FinFET Jul. 15, 2008
7262447 Metal oxide silicon transistor and semiconductor apparatus having high .lamda. and .beta. performances Aug. 28, 2007
7262471 Drain extended PMOS transistor with increased breakdown voltage Aug. 28, 2007
7074681 Semiconductor component and method of manufacturing Jul. 11, 2006
7074658 Structure for an LDMOS transistor and fabrication method for thereof Jul. 11, 2006
7067876 Semiconductor device Jun. 27, 2006
7067870 Power semiconductor switching element Jun. 27, 2006
7064385 DMOS-transistor with lateral dopant gradient in drift region and method of producing the same Jun. 20, 2006
7061066 Schottky diode using charge balance structure Jun. 13, 2006
7061048 Power MOSFET device Jun. 13, 2006

1 2 3 4 5 6 7

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