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Class Information
Number: 257/E29.017
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For preventing surface leakage due to surface inversion layer (e.g., channel stop) (epo) > With field relief electrodes acting on insulator potential or insulator charges (epo)
Description: This subclass is indented under subclass E29.016. This subclass is substantially the same in scope as ECLA classification H01L29/06B2C2.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8592284 Semiconductor device and manufacturing method thereof Nov. 26, 2013
8563960 Phase change random access memory and method for manufacturing the same Oct. 22, 2013
8319273 Self-aligned charge storage region formation for semiconductor device Nov. 27, 2012
8212318 High-voltage transistor with improved high stride performance Jul. 3, 2012
8188567 Semiconductor device and method for manufacturing May. 29, 2012
7994006 Manufacturing method of semiconductor device Aug. 9, 2011
7924603 Resistance variable memory with temperature tolerant materials Apr. 12, 2011
7915644 Wide bandgap HEMTs with source connected field plates Mar. 29, 2011
7879686 Semiconductor device and method for manufacturing Feb. 1, 2011
7829457 Protection of conductors from oxidation in deposition chambers Nov. 9, 2010
7800176 Electronic circuit for controlling a power field effect transistor Sep. 21, 2010
7682992 Resistance variable memory with temperature tolerant materials Mar. 23, 2010
7649223 Semiconductor device having superjunction structure and method for manufacturing the same Jan. 19, 2010
7564107 Power semiconductor device including a terminal structure Jul. 21, 2009
7126193 Metal-oxide-semiconductor device with enhanced source electrode Oct. 24, 2006
7061060 Offset-gate-type semiconductor device Jun. 13, 2006
7026214 Offset-gate-type semiconductor device Apr. 11, 2006
7005347 Structures of and methods of fabricating trench-gated MIS devices Feb. 28, 2006
7005351 Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration Feb. 28, 2006
6992362 Semiconductor with high-voltage components and low-voltage components on a shared die Jan. 31, 2006
6929988 Method of making an ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller charge Aug. 16, 2005
6909142 Semiconductor device including a channel stop structure and method of manufacturing the same Jun. 21, 2005
6891223 Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell May. 10, 2005
6870219 Field effect transistor and method of manufacturing same Mar. 22, 2005
6838722 Structures of and methods of fabricating trench-gated MIS devices Jan. 4, 2005
6831332 Microwave field effect transistor structure Dec. 14, 2004
6815769 Power semiconductor component, IGBT and field-effect transistor Nov. 9, 2004
6784486 Vertical power devices having retrograded-doped transition regions therein Aug. 31, 2004
6764889 Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes Jul. 20, 2004
6744117 High frequency semiconductor device and method of manufacture Jun. 1, 2004
6707102 Semiconductor device including an insulated gate type field effect transistor and method for fabricating the same Mar. 16, 2004
6690062 Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance Feb. 10, 2004
6683346 Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge Jan. 27, 2004
6664593 Field effect transistor structure and method of manufacture Dec. 16, 2003
6653691 Radio frequency (RF) power devices having faraday shield layers therein Nov. 25, 2003
6649975 Vertical power devices having trench-based electrodes therein Nov. 18, 2003
6621121 Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes Sep. 16, 2003
6586833 Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines Jul. 1, 2003
6573550 Semiconductor with high-voltage components and low-voltage components on a shared die Jun. 3, 2003
6552389 Offset-gate-type semiconductor device Apr. 22, 2003
6545316 MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same Apr. 8, 2003
6525372 Vertical power devices having insulated source electrodes in discontinuous deep trenches Feb. 25, 2003
6521923 Microwave field effect transistor structure on silicon carbide substrate Feb. 18, 2003
6479330 Semiconductor device and method for manufacturing the same Nov. 12, 2002
6468878 SOI LDMOS structure with improved switching characteristics Oct. 22, 2002
6424010 Method of manufacturing a semiconductor device having reduced power consumption without a reduction in the source/drain breakdown voltage Jul. 23, 2002
6388286 Power semiconductor devices having trench-based gate electrodes and field plates May. 14, 2002
6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode Feb. 12, 2002
6346444 Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof Feb. 12, 2002

1 2 3










 
 
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