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Class Information
Number: 257/E29.016
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For preventing surface leakage due to surface inversion layer (e.g., channel stop) (epo)
Description: This subclass is indented under subclass E29.007. This subclass is substantially the same in scope as ECLA classification H01L29/06B2C.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.017 With field relief electrodes acting on insulator potential or insulator charges (epo) 119


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8476685 Image sensor and method for fabricating the same Jul. 2, 2013
8138581 Semiconductor device with channel stop trench and method Mar. 20, 2012
8125036 Integrated circuit having an edge passivation and oxidation resistant layer and method Feb. 28, 2012
7893469 Image sensor and method for fabricating the same Feb. 22, 2011
7834406 High-voltage metal-oxide-semiconductor device and method of manufacturing the same Nov. 16, 2010
7829420 Method of forming a channel termination region using a trench and a channel stopper ring Nov. 9, 2010
7816229 Semiconductor device with channel stop trench and method Oct. 19, 2010
7781838 Integrated circuit including a body transistor and method Aug. 24, 2010
7745908 Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, Jun. 29, 2010
7709906 Semiconductor device and method of fabricating the same May. 4, 2010
7642597 Power semiconductor device Jan. 5, 2010
7638368 Reverse blocking semiconductor device and a method for manufacturing the same Dec. 29, 2009
7525178 Semiconductor device with capacitively coupled field plate Apr. 28, 2009
7482220 Semiconductor device having deep trench charge compensation regions and method Jan. 27, 2009
7425752 Semiconductor device channel termination Sep. 16, 2008
7307330 Reverse blocking semiconductor device and a method for manufacturing the same Dec. 11, 2007
7049669 LDMOS transistor May. 23, 2006
7049674 Reverse blocking semiconductor device and a method for manufacturing the same May. 23, 2006
6818536 Semiconductor device and method of manufacturing the same Nov. 16, 2004
6686641 Semiconductor device and method for driving the same Feb. 3, 2004
6596615 Semiconductor device and method of manufacturing the same Jul. 22, 2003
6388308 Semiconductor device and method for driving the same May. 14, 2002
6221724 Method of fabricating an integrated circuit having punch-through suppression Apr. 24, 2001
6191015 Method for producing a Schottky diode assembly formed on a semiconductor substrate Feb. 20, 2001
6168981 Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices Jan. 2, 2001
6124622 MIS transistor with a three-layer device isolation film surrounding the MIS transistor Sep. 26, 2000
6054752 Semiconductor device Apr. 25, 2000
6025629 Element isolation structure of a semiconductor device to suppress reduction in threshold voltage of parasitic MOS transistor Feb. 15, 2000
5907179 Schottky diode assembly and production method May. 25, 1999
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices May. 4, 1999
5864167 Semiconductor device Jan. 26, 1999
5798562 Semiconductor device having an isolation layer and two passivation layers with edges that are not aligned with each other Aug. 25, 1998
5789269 Field implant for semiconductor device Aug. 4, 1998
5747354 Semiconductor device having an improved anti-radioactivity and method of fabricating the same May. 5, 1998
5723886 N channel MOSFET with anti-radioactivity Mar. 3, 1998
5723985 Clocked high voltage switch Mar. 3, 1998
5691233 Process of forming channel stopper exactly nested in area assigned to thick field oxide layer Nov. 25, 1997
5658811 Method of manufacturing a semiconductor device Aug. 19, 1997
5623154 Semiconductor device having triple diffusion Apr. 22, 1997
5604370 Field implant for semiconductor device Feb. 18, 1997
5571745 Fabrication method of semiconductor device containing n- and p-channel MOSFETs Nov. 5, 1996
5559356 Semiconductor device with large substrate contact region Sep. 24, 1996
5498553 Method of making a metal gate high voltage integrated circuit Mar. 12, 1996
5344789 Method of manufacturing vertical DMOS transistor with high off-breakdown-voltage and low on-resistance Sep. 6, 1994
5293056 Semiconductor device with high off-breakdown-voltage and low on resistance Mar. 8, 1994
5289029 Semiconductor integrated circuit device having wells biased with different voltage levels Feb. 22, 1994
5192993 Semiconductor device having improved element isolation area Mar. 9, 1993
5172198 MOS type semiconductor device Dec. 15, 1992
5043293 Dual oxide channel stop for semiconductor devices Aug. 27, 1991

1 2 3 4










 
 
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