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Class Information
Number: 257/E29.015
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (epo)
Description: This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B4.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8466492 Semiconductor device with edge termination structure Jun. 18, 2013
8441104 Electrical overstress protection using through-silicon-via (TSV) May. 14, 2013
8373232 Device to detect and measure static electric charge Feb. 12, 2013
8314465 Dielectric layer for semiconductor device and method of manufacturing the same Nov. 20, 2012
8217457 Electrostatic discharge (ESD) protection device for use with multiple I/O standards Jul. 10, 2012
8084304 Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop Dec. 27, 2011
8058711 Filler for filling a gap and method for manufacturing semiconductor capacitor using the same Nov. 15, 2011
8053859 Semiconductor device and the method of manufacturing the same Nov. 8, 2011
7939904 Semiconductor device and method of manufacturing the same May. 10, 2011
7919804 Power distribution for high-speed integrated circuits Apr. 5, 2011
7898035 Semiconductor device Mar. 1, 2011
7893497 Semiconductor device Feb. 22, 2011
7863667 Zirconium titanium oxide films Jan. 4, 2011
7825431 Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection Nov. 2, 2010
7795663 Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof Sep. 14, 2010
7750407 Strapping contact for charge protection Jul. 6, 2010
7728385 Trench MOSFET with an ONO insulating layer sandwiched between an ESD protection module atop and a semiconductor substrate Jun. 1, 2010
7709874 Semiconductor device having a split gate structure with a recessed top face electrode May. 4, 2010
7638824 Field effect transistor having a crank-shaped multigate structure Dec. 29, 2009
7619272 Bi-axial texturing of high-K dielectric films to reduce leakage currents Nov. 17, 2009
7579658 Devices without current crowding effect at the finger's ends Aug. 25, 2009
7550397 Method of manufacturing a semiconductor device having a pre-metal dielectric liner Jun. 23, 2009
7547572 Method of protecting semiconductor chips from mechanical and ESD damage during handling Jun. 16, 2009
7525171 Semiconductor device and a method of manufacturing the same Apr. 28, 2009
7518199 Insulating film containing an additive element and semiconductor device Apr. 14, 2009
7382013 Dielectric thin film, dielectric thin film device, and method of production thereof Jun. 3, 2008
7378310 Method for manufacturing a memory device having a nanocrystal charge storage region May. 27, 2008
7375403 Semiconductor device and method of manufacturing the same May. 20, 2008
7372114 Semiconductor device, and method of fabricating the same May. 13, 2008
7067870 Power semiconductor switching element Jun. 27, 2006
7061094 Multilayer printed circuit board including first and second signal traces and a first ground trace Jun. 13, 2006
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures Feb. 14, 2006
6972436 High voltage, high temperature capacitor and interconnection structures Dec. 6, 2005
6949798 Semiconductor device Sep. 27, 2005
6936907 Lateral high-voltage semiconductor devices with surface covered by thin film of dielectric material with high permittivity Aug. 30, 2005
6900523 Termination structure for MOSgated power devices May. 31, 2005
6803626 Vertical charge control semiconductor device Oct. 12, 2004
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6756270 Semiconductor device and fabrication method thereof Jun. 29, 2004
6750508 Power semiconductor switching element provided with buried electrode Jun. 15, 2004
6734520 Semiconductor component and method of producing it May. 11, 2004
6724021 Semiconductor devices and their peripheral termination Apr. 20, 2004
6700180 Rectifying diode Mar. 2, 2004
6624472 Semiconductor device with voltage sustaining zone Sep. 23, 2003
6608350 High voltage vertical conduction superjunction semiconductor device Aug. 19, 2003
6605862 Trench semiconductor devices Aug. 12, 2003
6558983 Semiconductor apparatus and method for manufacturing the same May. 6, 2003
6528373 Layered dielectric on silicon carbide semiconductor structures Mar. 4, 2003
6495864 High-voltage semiconductor component, method for the production and use thereof Dec. 17, 2002
6489213 Method for manufacturing semiconductor device containing a silicon-rich layer Dec. 3, 2002

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