| |
 |
|
Class Information
Number: 257/E29.014
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With breakdown supporting region for localizing breakdown or limiting its voltage (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615826 |
Electrostatic discharge protection semiconductor structure |
Nov. 10, 2009 |
| 7579632 |
Multi-channel ESD device and method therefor |
Aug. 25, 2009 |
| 7508038 |
ESD protection transistor |
Mar. 24, 2009 |
| 7473973 |
Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit |
Jan. 6, 2009 |
| 7449751 |
High voltage operating electrostatic discharge protection device |
Nov. 11, 2008 |
| 7427800 |
Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
Sep. 23, 2008 |
| 7355261 |
Thin film device, thin film device module, and method of forming thin film device module |
Apr. 8, 2008 |
| 7291888 |
ESD protection circuit using a transistor chain |
Nov. 6, 2007 |
| 7279768 |
Semiconductor device for overvoltage protection |
Oct. 9, 2007 |
| 7256460 |
Body-biased pMOS protection against electrostatic discharge |
Aug. 14, 2007 |
| 7112828 |
Semiconductor device |
Sep. 26, 2006 |
| 6893926 |
Manufacturing method of semiconductor device with protection against electrostatic discharge |
May. 17, 2005 |
| 6376321 |
Method of making a pn-junction in a semiconductor element |
Apr. 23, 2002 |
| 6225662 |
Semiconductor structure with heavily doped buried breakdown region |
May. 1, 2001 |
| 6218226 |
Method of forming an ESD protection device |
Apr. 17, 2001 |
| 5883413 |
Lateral high-voltage DMOS transistor with drain zone charge draining |
Mar. 16, 1999 |
| 5747853 |
Semiconductor structure with controlled breakdown protection |
May. 5, 1998 |
| 5656843 |
Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate |
Aug. 12, 1997 |
| 5635743 |
Semiconductor device having an increased withstand voltage against an inverse surge voltage |
Jun. 3, 1997 |
| 5627387 |
Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same |
May. 6, 1997 |
| 5614752 |
Semiconductor device containing external surge protection component |
Mar. 25, 1997 |
| 5552625 |
Semiconductor device having a semi-insulating layer |
Sep. 3, 1996 |
| 5527720 |
Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate |
Jun. 18, 1996 |
| 5510634 |
Insulated gate bipolar transistor |
Apr. 23, 1996 |
| 5274253 |
Semiconductor protection device against abnormal voltage |
Dec. 28, 1993 |
| 5184204 |
Semiconductor device with high surge endurance |
Feb. 2, 1993 |
| 5160990 |
MIS-FET with small chip area and high strength against static electricity |
Nov. 3, 1992 |
| 5144389 |
Insulated gate field effect transistor with high breakdown voltage |
Sep. 1, 1992 |
| 4972249 |
Semiconductor component increasing the breakdown voltage |
Nov. 20, 1990 |
| 4972247 |
High energy event protection for semiconductor devices |
Nov. 20, 1990 |
| 4881111 |
Radiation hard, high emitter-base breakdown bipolar transistor |
Nov. 14, 1989 |
| 4825266 |
Semiconductor diode |
Apr. 25, 1989 |
| 4803532 |
Vertical MOSFET having a proof structure against puncture due to breakdown |
Feb. 7, 1989 |
| 4686551 |
MOS transistor |
Aug. 11, 1987 |
| 4267557 |
Semiconductor device |
May. 12, 1981 |
| 4225874 |
Semiconductor device having integrated diode |
Sep. 30, 1980 |
| 4105901 |
Monostable circuit |
Aug. 8, 1978 |
| 4085432 |
Voltage limiter circuit |
Apr. 18, 1978 |
| 4071852 |
Transistor having improved junction breakdown protection integrated therein |
Jan. 31, 1978 |
|
|
|
