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Class Information
Number: 257/E29.014
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With breakdown supporting region for localizing breakdown or limiting its voltage (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3C.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8710589 |
Semiconductor device |
Apr. 29, 2014 |
| 8686508 |
Structures, methods and applications for electrical pulse anneal processes |
Apr. 1, 2014 |
| 8587071 |
Electrostatic discharge (ESD) guard ring protective structure |
Nov. 19, 2013 |
| 8575694 |
Insulated gate bipolar transistor structure having low substrate leakage |
Nov. 5, 2013 |
| 8541862 |
Semiconductor device with self-biased isolation |
Sep. 24, 2013 |
| 8471337 |
Integrated circuit |
Jun. 25, 2013 |
| 8264015 |
Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor |
Sep. 11, 2012 |
| 8232601 |
Transient voltage suppressors |
Jul. 31, 2012 |
| 8217462 |
Transient voltage suppressors |
Jul. 10, 2012 |
| 8134210 |
Master, pixel array substrate, electro-optical device and methods of manufacturing the same |
Mar. 13, 2012 |
| 8124981 |
Rugged semiconductor device architecture |
Feb. 28, 2012 |
| 8093676 |
Semiconductor component including an edge termination having a trench and method for producing |
Jan. 10, 2012 |
| 8063412 |
Semiconductor device with dummy pattern within active region and method of manufacturing the same |
Nov. 22, 2011 |
| 8013393 |
Electrostatic discharge protection devices |
Sep. 6, 2011 |
| 7964931 |
Semiconductor device |
Jun. 21, 2011 |
| 7944017 |
Semiconductor device and manufacturing method of the same |
May. 17, 2011 |
| 7936020 |
Dual-directional electrostatic discharge protection device |
May. 3, 2011 |
| 7915676 |
Integrated circuit |
Mar. 29, 2011 |
| 7846800 |
Avoiding plasma charging in integrated circuits |
Dec. 7, 2010 |
| 7829898 |
Power semiconductor device having raised channel and manufacturing method thereof |
Nov. 9, 2010 |
| 7816688 |
Semiconductor device and production method therefor |
Oct. 19, 2010 |
| 7714407 |
Semiconductor device and method of forming a semiconductor device |
May. 11, 2010 |
| 7667254 |
Semiconductor integrated circuit device |
Feb. 23, 2010 |
| 7649223 |
Semiconductor device having superjunction structure and method for manufacturing the same |
Jan. 19, 2010 |
| 7638848 |
Semiconductor apparatus with improved ESD withstanding voltage |
Dec. 29, 2009 |
| 7615826 |
Electrostatic discharge protection semiconductor structure |
Nov. 10, 2009 |
| 7579632 |
Multi-channel ESD device and method therefor |
Aug. 25, 2009 |
| 7508038 |
ESD protection transistor |
Mar. 24, 2009 |
| 7473973 |
Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit |
Jan. 6, 2009 |
| 7449751 |
High voltage operating electrostatic discharge protection device |
Nov. 11, 2008 |
| 7427800 |
Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
Sep. 23, 2008 |
| 7355261 |
Thin film device, thin film device module, and method of forming thin film device module |
Apr. 8, 2008 |
| 7291888 |
ESD protection circuit using a transistor chain |
Nov. 6, 2007 |
| 7279768 |
Semiconductor device for overvoltage protection |
Oct. 9, 2007 |
| 7256460 |
Body-biased pMOS protection against electrostatic discharge |
Aug. 14, 2007 |
| 7112828 |
Semiconductor device |
Sep. 26, 2006 |
| 6893926 |
Manufacturing method of semiconductor device with protection against electrostatic discharge |
May. 17, 2005 |
| 6376321 |
Method of making a pn-junction in a semiconductor element |
Apr. 23, 2002 |
| 6225662 |
Semiconductor structure with heavily doped buried breakdown region |
May. 1, 2001 |
| 6218226 |
Method of forming an ESD protection device |
Apr. 17, 2001 |
| 5883413 |
Lateral high-voltage DMOS transistor with drain zone charge draining |
Mar. 16, 1999 |
| 5747853 |
Semiconductor structure with controlled breakdown protection |
May. 5, 1998 |
| 5656843 |
Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate |
Aug. 12, 1997 |
| 5635743 |
Semiconductor device having an increased withstand voltage against an inverse surge voltage |
Jun. 3, 1997 |
| 5627387 |
Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same |
May. 6, 1997 |
| 5614752 |
Semiconductor device containing external surge protection component |
Mar. 25, 1997 |
| 5552625 |
Semiconductor device having a semi-insulating layer |
Sep. 3, 1996 |
| 5527720 |
Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate |
Jun. 18, 1996 |
| 5510634 |
Insulated gate bipolar transistor |
Apr. 23, 1996 |
| 5274253 |
Semiconductor protection device against abnormal voltage |
Dec. 28, 1993 |
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