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Class Information
Number: 257/E29.014
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With breakdown supporting region for localizing breakdown or limiting its voltage (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710589 Semiconductor device Apr. 29, 2014
8686508 Structures, methods and applications for electrical pulse anneal processes Apr. 1, 2014
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8541862 Semiconductor device with self-biased isolation Sep. 24, 2013
8471337 Integrated circuit Jun. 25, 2013
8264015 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Sep. 11, 2012
8232601 Transient voltage suppressors Jul. 31, 2012
8217462 Transient voltage suppressors Jul. 10, 2012
8134210 Master, pixel array substrate, electro-optical device and methods of manufacturing the same Mar. 13, 2012
8124981 Rugged semiconductor device architecture Feb. 28, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8063412 Semiconductor device with dummy pattern within active region and method of manufacturing the same Nov. 22, 2011
8013393 Electrostatic discharge protection devices Sep. 6, 2011
7964931 Semiconductor device Jun. 21, 2011
7944017 Semiconductor device and manufacturing method of the same May. 17, 2011
7936020 Dual-directional electrostatic discharge protection device May. 3, 2011
7915676 Integrated circuit Mar. 29, 2011
7846800 Avoiding plasma charging in integrated circuits Dec. 7, 2010
7829898 Power semiconductor device having raised channel and manufacturing method thereof Nov. 9, 2010
7816688 Semiconductor device and production method therefor Oct. 19, 2010
7714407 Semiconductor device and method of forming a semiconductor device May. 11, 2010
7667254 Semiconductor integrated circuit device Feb. 23, 2010
7649223 Semiconductor device having superjunction structure and method for manufacturing the same Jan. 19, 2010
7638848 Semiconductor apparatus with improved ESD withstanding voltage Dec. 29, 2009
7615826 Electrostatic discharge protection semiconductor structure Nov. 10, 2009
7579632 Multi-channel ESD device and method therefor Aug. 25, 2009
7508038 ESD protection transistor Mar. 24, 2009
7473973 Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit Jan. 6, 2009
7449751 High voltage operating electrostatic discharge protection device Nov. 11, 2008
7427800 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics Sep. 23, 2008
7355261 Thin film device, thin film device module, and method of forming thin film device module Apr. 8, 2008
7291888 ESD protection circuit using a transistor chain Nov. 6, 2007
7279768 Semiconductor device for overvoltage protection Oct. 9, 2007
7256460 Body-biased pMOS protection against electrostatic discharge Aug. 14, 2007
7112828 Semiconductor device Sep. 26, 2006
6893926 Manufacturing method of semiconductor device with protection against electrostatic discharge May. 17, 2005
6376321 Method of making a pn-junction in a semiconductor element Apr. 23, 2002
6225662 Semiconductor structure with heavily doped buried breakdown region May. 1, 2001
6218226 Method of forming an ESD protection device Apr. 17, 2001
5883413 Lateral high-voltage DMOS transistor with drain zone charge draining Mar. 16, 1999
5747853 Semiconductor structure with controlled breakdown protection May. 5, 1998
5656843 Semiconductor device having a vertical insulated gate field effect device and a breakdown region remote from the gate Aug. 12, 1997
5635743 Semiconductor device having an increased withstand voltage against an inverse surge voltage Jun. 3, 1997
5627387 Overvoltage self-protection semiconductor device, method of fabrication thereof and semiconductor circuit using the same May. 6, 1997
5614752 Semiconductor device containing external surge protection component Mar. 25, 1997
5552625 Semiconductor device having a semi-insulating layer Sep. 3, 1996
5527720 Method of forming a semiconductor device having a vertical insulated gate FET and a breakdown region remote from the gate Jun. 18, 1996
5510634 Insulated gate bipolar transistor Apr. 23, 1996
5274253 Semiconductor protection device against abnormal voltage Dec. 28, 1993

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