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Class Information
Number: 257/E29.013
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with pn or schottky junction) (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3B.

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6566709 Semiconductor device May. 20, 2003
6563169 Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer May. 13, 2003
6558996 Edge structure for relaxing electric field of semiconductor device having an embedded type diffusion structure May. 6, 2003
6551868 Vertical power component manufacturing method Apr. 22, 2003
6551909 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Apr. 22, 2003
6537860 Method of fabricating power VLSI diode devices Mar. 25, 2003
6534829 Semiconductor device and method for fabricating the same Mar. 18, 2003
6534830 Low impedance VDMOS semiconductor component Mar. 18, 2003
6512267 Superjunction device with self compensated trench walls Jan. 28, 2003
6509625 Guard structure for bipolar semiconductor device Jan. 21, 2003
6509617 Semiconductor device and fabrication method thereof Jan. 21, 2003
6507050 Thyristors having a novel arrangement of concentric perimeter zones Jan. 14, 2003
6504230 Compensation component and method for fabricating the compensation component Jan. 7, 2003
6498368 Power semiconductor device Dec. 24, 2002
6476458 Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element Nov. 5, 2002
6465304 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer Oct. 15, 2002
6459102 Peripheral structure for monolithic power device Oct. 1, 2002
6455911 Silicon-based semiconductor component with high-efficiency barrier junction termination Sep. 24, 2002
6445054 Semiconductor device Sep. 3, 2002
6445048 Semiconductor configuration having trenches for isolating doped regions Sep. 3, 2002
6445038 Silicon on insulator high-voltage switch Sep. 3, 2002
6441455 Low dosage field rings for high voltage semiconductor device Aug. 27, 2002
6433385 MOS-gated power device having segmented trench and extended doping zone and process for forming same Aug. 13, 2002
6426520 Semiconductor device Jul. 30, 2002
6404010 MOS technology power device Jun. 11, 2002
6404037 Insulated gate bipolar transistor Jun. 11, 2002
6400003 High voltage MOSFET with geometrical depletion layer enhancement Jun. 4, 2002
6380569 High power unipolar FET switch Apr. 30, 2002
6376890 High-voltage edge termination for planar structures Apr. 23, 2002
6369424 Field effect transistor having high breakdown withstand capacity Apr. 9, 2002
6362036 VDMOS transistor protected against over-voltages between source and gate Mar. 26, 2002
6342709 Insulated gate semiconductor device Jan. 29, 2002
6326656 Lateral high-voltage transistor Dec. 4, 2001
6313482 Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein Nov. 6, 2001
6310365 Surface voltage sustaining structure for semiconductor devices having floating voltage terminal Oct. 30, 2001
6309952 Process for forming high voltage junction termination extension oxide Oct. 30, 2001
6300171 Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure Oct. 9, 2001
6294818 Parallel-stripe type semiconductor device Sep. 25, 2001
6284620 Method for fabricating an SOI wafer for low-impedance high-voltage semiconductor components Sep. 4, 2001
6274904 Edge structure and drift region for a semiconductor component and production method Aug. 14, 2001
6252279 DMOS transistor having a high reliability and a method for fabricating the same Jun. 26, 2001
6236100 Semiconductor with high-voltage components and low-voltage components on a shared die May. 22, 2001
6236099 Trench MOS device and process for radhard device May. 22, 2001
6218714 Insulated gate semiconductor device and method of manufacturing the same Apr. 17, 2001
6204097 Semiconductor device and method of manufacture Mar. 20, 2001
6198141 Insulated gate semiconductor device and method of manufacturing the same Mar. 6, 2001
6198127 MOS-gated power device having extended trench and doping zone and process for forming same Mar. 6, 2001
6198129 Vertical type insulated gate transistor Mar. 6, 2001
6194741 MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistance Feb. 27, 2001
6194761 VDMOS transistor protected against over-voltages between source and gate Feb. 27, 2001

1 2 3 4 5 6 7 8 9

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