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Class Information
Number: 257/E29.013
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with pn or schottky junction) (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3B.

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6787437 Method of making a high-voltage transistor with buried conduction regions Sep. 7, 2004
6784465 Vertical power component manufacturing method Aug. 31, 2004
6777749 High-voltage transistor with multi-layer conduction region Aug. 17, 2004
6768172 High-voltage transistor with multi-layer conduction region Jul. 27, 2004
6768147 Semiconductor device and method of fabricating the same Jul. 27, 2004
6768138 Diode element Jul. 27, 2004
6762455 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component Jul. 13, 2004
6747294 Guard ring structure for reducing crosstalk and latch-up in integrated circuits Jun. 8, 2004
6734496 Semiconductor device May. 11, 2004
6727527 Reverse blocking IGBT Apr. 27, 2004
6724040 Semiconductor device Apr. 20, 2004
6724041 Method of making a high-voltage transistor with buried conduction regions Apr. 20, 2004
6724042 Super-junction semiconductor device Apr. 20, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6717229 Distributed reverse surge guard Apr. 6, 2004
6713794 Lateral semiconductor device Mar. 30, 2004
6707128 Vertical MISFET transistor surrounded by a Schottky barrier diode with a common source and anode electrode Mar. 16, 2004
6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Mar. 9, 2004
6699775 Manufacturing process for fast recovery diode Mar. 2, 2004
6700157 Semiconductor device Mar. 2, 2004
6693338 Power semiconductor device having RESURF layer Feb. 17, 2004
6693323 Super-junction semiconductor device Feb. 17, 2004
6693308 Power SiC devices having raised guard rings Feb. 17, 2004
6683347 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Jan. 27, 2004
6677210 High voltage transistors with graded extension Jan. 13, 2004
6677626 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Jan. 13, 2004
6673681 Process for forming MOS-gated power device having segmented trench and extended doping zone Jan. 6, 2004
6670685 Method of manufacturing and structure of semiconductor device with floating ring structure Dec. 30, 2003
6670688 Semiconductor device including at least one schottky metal layer surrounding PN junction Dec. 30, 2003
6667515 High breakdown voltage semiconductor device Dec. 23, 2003
6657273 Termination for high voltage schottky diode Dec. 2, 2003
6649539 Semiconductor contact fabrication method Nov. 18, 2003
6649459 Method for manufacturing a semiconductor component Nov. 18, 2003
6646304 Universal semiconductor wafer for high-voltage semiconductor components Nov. 11, 2003
6642558 Method and apparatus of terminating a high voltage solid state device Nov. 4, 2003
6639277 High-voltage transistor with multi-layer conduction region Oct. 28, 2003
6635906 Voltage sustaining layer with opposite-doped islands for semi-conductor power devices Oct. 21, 2003
6633065 High-voltage transistor with multi-layer conduction region Oct. 14, 2003
6630698 High-voltage semiconductor component Oct. 7, 2003
6627948 Vertical layer type semiconductor device Sep. 30, 2003
6624494 Method for fabricating a power semiconductor device having a floating island voltage sustaining layer Sep. 23, 2003
6620669 Manufacture of trench-gate semiconductor devices Sep. 16, 2003
6617652 High breakdown voltage semiconductor device Sep. 9, 2003
6617647 Insulated gate semiconductor device and method of manufacturing the same Sep. 9, 2003
6607972 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation Aug. 19, 2003
6586798 High voltage MOS-gated power device Jul. 1, 2003
6579782 Vertical power component manufacturing method Jun. 17, 2003
6580123 Low voltage power MOSFET device and process for its manufacture Jun. 17, 2003
6573550 Semiconductor with high-voltage components and low-voltage components on a shared die Jun. 3, 2003
6570185 Structure to reduce the on-resistance of power transistors May. 27, 2003

1 2 3 4 5 6 7 8 9

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