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Class Information
Number: 257/E29.013
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > By doping profile or shape or arrangement of the pn junction, or with supplementary regions (e.g., guard ring, ldd, drift region) (epo) > With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with pn or schottky junction) (epo)
Description: This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3B.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710595 Semiconductor device Apr. 29, 2014
8686508 Structures, methods and applications for electrical pulse anneal processes Apr. 1, 2014
8686531 Structure and method for forming a guard ring to protect a control device in a power semiconductor IC Apr. 1, 2014
8618618 Semiconductor device Dec. 31, 2013
8587058 Lateral diffused metal-oxide-semiconductor device Nov. 19, 2013
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8581344 Laterally diffused metal oxide semiconductor transistors Nov. 12, 2013
8575690 Super-junction trench MOSFET having deep trenches with buried voids Nov. 5, 2013
RE44547 Semiconductor device having deep trench charge compensation regions and method Oct. 22, 2013
8564058 Super-junction trench MOSFET with multiple trenched gates in unit cell Oct. 22, 2013
8552476 Schottky barrier diode and MOSFET semiconductor device Oct. 8, 2013
8525272 High-frequency switching transistor and high-frequency circuit Sep. 3, 2013
8508002 Semiconductor device Aug. 13, 2013
8471332 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout Jun. 25, 2013
8450828 Semiconductor device May. 28, 2013
8445370 Trench junction barrier controlled Schottky May. 21, 2013
8435873 Unguarded Schottky barrier diodes with dielectric underetch at silicide interface May. 7, 2013
8415765 Semiconductor device including a guard ring or an inverted region Apr. 9, 2013
8362585 Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging Jan. 29, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8349666 Fused buss for plating features on a semiconductor die Jan. 8, 2013
8274128 Semiconductor device with buffer layer Sep. 25, 2012
8268693 Method for fabricating a radiation hardened device Sep. 18, 2012
8264056 Schottky diode Sep. 11, 2012
8264015 Semiconductor device wherein a first insulated gate field effect transistor is connected in series with a second field effect transistor Sep. 11, 2012
8247876 Semiconductor device Aug. 21, 2012
8217394 Probe pad on a corner stress relief region in a semiconductor chip Jul. 10, 2012
8212323 Seal ring structure for integrated circuits Jul. 3, 2012
8188578 Seal ring structure for integrated circuits May. 29, 2012
8183638 Dual triggered silicon controlled rectifier May. 22, 2012
8153481 Semiconductor power device with passivation layers Apr. 10, 2012
8138047 Super junction semiconductor device Mar. 20, 2012
8110853 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication Feb. 7, 2012
8089127 Dual triggered silicon controlled rectifier Jan. 3, 2012
8049276 Reduced process sensitivity of electrode-semiconductor rectifiers Nov. 1, 2011
8039898 Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device Oct. 18, 2011
8018021 Schottky diode and method of fabricating the same Sep. 13, 2011
7999345 Semiconductor device and manufacturing method thereof Aug. 16, 2011
7994589 Semiconductor device and method for fabricating the same Aug. 9, 2011
7977762 Effective shield structure for improving substrate isolation of analog circuits from noisy digital circuits on a system-on-chip (SOC) Jul. 12, 2011
7973381 Thick field oxide termination for trench schottky device Jul. 5, 2011
7968976 Guard ring extension to prevent reliability failures Jun. 28, 2011
7952139 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout May. 31, 2011
7948039 Semiconductor device and method for fabricating the same May. 24, 2011
7944035 Double sided semiconduction device with edge contact and package therefor May. 17, 2011
7911020 Semiconductor device having breakdown voltage maintaining structure and its manufacturing method Mar. 22, 2011
7902601 Semiconductor device having deep trench charge compensation regions and method Mar. 8, 2011
7888708 Examination apparatus for biological sample and chemical sample Feb. 15, 2011
7843019 Seal ring for mixed circuitry semiconductor devices Nov. 30, 2010
7825467 Semiconductor component having a drift zone and a drift control zone Nov. 2, 2010

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