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Class Information
Number: 257/E29.011
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With field relief electrode (field plate) (epo) > With at least two field relief electrodes used in combination and not electrically interconnected (epo) > With one or more field relief electrode comprising resistance material (e.g., semi insulating material, lightly doped poly-silicon) (epo)
Description: This subclass is indented under subclass E29.01. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2C2.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8530877 Non-volatile semiconductor device Sep. 10, 2013
8314471 Trench devices having improved breakdown voltages and method for manufacturing same Nov. 20, 2012
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7391088 Integrated circuit with multi-length output transistor segments Jun. 24, 2008
7335944 High-voltage vertical transistor with a multi-gradient drain doping profile Feb. 26, 2008
7253059 Method of forming an integrated circuit with multi-length power transistor segments Aug. 7, 2007
7220629 Method of manufacturing an integrated circuit with multilength power transistor elements May. 22, 2007
7135748 Integrated circuit with multi-length output transistor segment Nov. 14, 2006
7119415 Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof Oct. 10, 2006
7112867 Resistive isolation between a body and a body contact Sep. 26, 2006
7067870 Power semiconductor switching element Jun. 27, 2006
6879005 High withstand voltage semiconductor device Apr. 12, 2005
6803626 Vertical charge control semiconductor device Oct. 12, 2004
6777780 Trench bipolar transistor Aug. 17, 2004
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6770917 High-voltage diode Aug. 3, 2004
6765239 Semiconductor device having junction-termination structure of resurf type Jul. 20, 2004
6750508 Power semiconductor switching element provided with buried electrode Jun. 15, 2004
6724021 Semiconductor devices and their peripheral termination Apr. 20, 2004
6680515 Lateral high voltage transistor having spiral field plate and graded concentration doping Jan. 20, 2004
6660570 Method of fabricating a high voltage semiconductor device using SIPOS Dec. 9, 2003
6624472 Semiconductor device with voltage sustaining zone Sep. 23, 2003
6614088 Breakdown improvement method and sturcture for lateral DMOS device Sep. 2, 2003
6608351 Semiconductor device comprising a high-voltage circuit element Aug. 19, 2003
6608350 High voltage vertical conduction superjunction semiconductor device Aug. 19, 2003
6605862 Trench semiconductor devices Aug. 12, 2003
6462377 Insulated gate field effect device Oct. 8, 2002
6452230 High voltage mosgated device with trenches to reduce on-resistance Sep. 17, 2002
6445019 Lateral semiconductor device for withstanding high reverse biasing voltages Sep. 3, 2002
6353252 High breakdown voltage semiconductor device having trenched film connected to electrodes Mar. 5, 2002
6320205 Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode Nov. 20, 2001
6201279 Semiconductor component having a small forward voltage and high blocking ability Mar. 13, 2001
6100572 Amorphous silicon combined with resurf region for termination for MOSgated device Aug. 8, 2000
6040219 Method of fabricating power semiconductor device using semi-insulating polycrystalline silicon (SIPOS) film Mar. 21, 2000
5945692 Semiconductor device and method of fabricating same Aug. 31, 1999
5844293 Semiconductor device with improved dielectric breakdown strength Dec. 1, 1998
5640040 High breakdown voltage semiconductor device Jun. 17, 1997
5637908 Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction Jun. 10, 1997
5627385 Lateral silicon carbide transistor May. 6, 1997
5592014 High breakdown voltage semiconductor device Jan. 7, 1997
5578859 Semiconductor structure having one or more lateral, high-blocking semiconductor components Nov. 26, 1996
5536961 High breakdown voltage semiconductor device Jul. 16, 1996
5498899 Spiral resistor integrated on a semiconductor substrate Mar. 12, 1996
5486718 High voltage planar edge termination structure and method of making same Jan. 23, 1996
5475238 Thin film transistor with a sub-gate structure and a drain offset region Dec. 12, 1995
5438220 High breakdown voltage semiconductor device Aug. 1, 1995
5434444 High breakdown voltage semiconductor device Jul. 18, 1995
5407844 Process for simultaneously fabricating an insulated gate field-effect transistor and a bipolar transistor Apr. 18, 1995
5382825 Spiral edge passivation structure for semiconductor devices Jan. 17, 1995
5382826 Stacked high voltage transistor unit Jan. 17, 1995

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