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Class Information
Number: 257/E29.01
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With field relief electrode (field plate) (epo) > With at least two field relief electrodes used in combination and not electrically interconnected (epo)
Description: This subclass is indented under subclass E29.009. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2C.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.011 With one or more field relief electrode comprising resistance material (e.g., semi insulating material, lightly doped poly-silicon) (epo) 95


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8476736 Low leakage diodes Jul. 2, 2013
8384076 Transistors, semiconductor devices and methods of manufacturing the same Feb. 26, 2013
8349668 Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers Jan. 8, 2013
8278715 Electrostatic discharge protection device Oct. 2, 2012
7985977 Sacrificial pillar dielectric platform Jul. 26, 2011
7884396 Method and structure for self-aligned device contacts Feb. 8, 2011
RE41866 Semiconductor device and method of fabricating same Oct. 26, 2010
7781809 High voltage depletion layer field effect transistor Aug. 24, 2010
7750399 MOS transistors having recessed channel regions and methods of fabricating the same Jul. 6, 2010
7723801 Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device May. 25, 2010
7696535 Gallium nitride high electron mobility transistor having inner field-plate for high power applications Apr. 13, 2010
7663175 Semiconductor integrated circuit device Feb. 16, 2010
7622742 III-nitride compound semiconductor light emitting device Nov. 24, 2009
7598616 Interconnect structure Oct. 6, 2009
7413973 Method for manufacturing nano-gap electrode device Aug. 19, 2008
7179706 Permeable capacitor electrode Feb. 20, 2007
7180087 Spin filter and a memory using such a spin filter Feb. 20, 2007
7109562 High voltage laterally double-diffused metal oxide semiconductor Sep. 19, 2006
7075125 Power semiconductor device Jul. 11, 2006
7061066 Schottky diode using charge balance structure Jun. 13, 2006
6991977 Method for forming a semiconductor structure with improved smaller forward voltage loss and higher blocking capability Jan. 31, 2006
6956249 Termination of semiconductor components Oct. 18, 2005
6911692 Semiconductor device Jun. 28, 2005
6894319 Semiconductor device May. 17, 2005
6870219 Field effect transistor and method of manufacturing same Mar. 22, 2005
6833726 SOI-LDMOS device with integral voltage sense electrodes Dec. 21, 2004
6833583 Edge termination in a trench-gate MOSFET Dec. 21, 2004
6828645 Voltage withstanding structure for a semiconductor device Dec. 7, 2004
6765266 Semiconductor device with peripheral portion for withstanding surge voltage Jul. 20, 2004
6762440 Semiconductor component and corresponding test method Jul. 13, 2004
6750506 High-voltage semiconductor device Jun. 15, 2004
6717230 Lateral device with improved conductivity and blocking control Apr. 6, 2004
6717214 SOI-LDMOS device with integral voltage sense electrodes Apr. 6, 2004
6699775 Manufacturing process for fast recovery diode Mar. 2, 2004
6677641 Semiconductor structure with improved smaller forward voltage loss and higher blocking capability Jan. 13, 2004
6677642 Field effect transistor structure and method of manufacture Jan. 13, 2004
6677657 High-voltage periphery Jan. 13, 2004
6661036 Semiconductor switches with evenly distributed fine control structures Dec. 9, 2003
6642551 Stable high voltage semiconductor device structure Nov. 4, 2003
6617652 High breakdown voltage semiconductor device Sep. 9, 2003
6603176 Power semiconductor device for power integrated circuit device Aug. 5, 2003
6603185 Voltage withstanding structure for a semiconductor device Aug. 5, 2003
6525389 High voltage termination with amorphous silicon layer below the field plate Feb. 25, 2003
6512268 Super-junction semiconductor device Jan. 28, 2003
6472722 Termination structure for high voltage devices Oct. 29, 2002
6462376 Power MOS element and method for producing the same Oct. 8, 2002
6426540 Optimized border of semiconductor components Jul. 30, 2002
6424014 Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength Jul. 23, 2002
6407413 Semiconductor device with guard ring and Zener diode layer thereover Jun. 18, 2002
6365930 Edge termination of semiconductor devices for high voltages with resistive voltage divider Apr. 2, 2002

1 2 3 4










 
 
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