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Class Information
Number: 257/E29.009
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (epo) > Electrical characteristics due to properties of entire semiconductor body rather than just surface region (epo) > Characterized by specified shape or size of pn junction or by specified impurity concentration gradient within the device (epo) > Characterized by particular design considerations to control electrical field effect within device (epo) > For controlling surface leakage or electric field concentration (epo) > For controlling breakdown voltage of reverse biased devices (epo) > With field relief electrode (field plate) (epo)
Description: This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2.










Sub-classes under this class:

Class Number Class Name Patents
257/E29.01 With at least two field relief electrodes used in combination and not electrically interconnected (epo) 158


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5298789 Semiconductor component for a high blocking bias Mar. 29, 1994
5298442 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Mar. 29, 1994
5275961 Method of forming insulated gate field-effect transistors Jan. 4, 1994
5274259 High voltage transistor Dec. 28, 1993
5252848 Low on resistance field effect transistor Oct. 12, 1993
5246870 Method for making an improved high voltage thin film transistor having a linear doping profile Sep. 21, 1993
5242845 Method of production of vertical MOS transistor Sep. 7, 1993
5237193 Lightly doped drain MOSFET with reduced on-resistance Aug. 17, 1993
5233215 Silicon carbide power MOSFET with floating field ring and floating field plate Aug. 3, 1993
5187552 Shielded field-effect transistor devices Feb. 16, 1993
5179032 Mosfet structure having reduced capacitance and method of forming same Jan. 12, 1993
5126807 Vertical MOS transistor and its production method Jun. 30, 1992
5124763 Insulated-gate type integrated circuit Jun. 23, 1992
5121176 MOSFET structure having reduced gate capacitance Jun. 9, 1992
5113230 Semiconductor device having a conductive layer for preventing insulation layer destruction May. 12, 1992
5109266 Semiconductor integrated circuit device having high breakdown-voltage to applied voltage Apr. 28, 1992
5077589 MESFET structure having a shielding region Dec. 31, 1991
5072266 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Dec. 10, 1991
5055896 Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability Oct. 8, 1991
5040045 High voltage MOS transistor having shielded crossover path for a high voltage connection bus Aug. 13, 1991
5003372 High breakdown voltage semiconductor device Mar. 26, 1991
4994891 Shielded transistor device Feb. 19, 1991
4966858 Method of fabricating a lateral semiconductor structure including field plates for self-alignment Oct. 30, 1990
4924286 Semiconductor device May. 8, 1990
4920393 Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage Apr. 24, 1990
4916494 Monolithic integrated planar semiconductor system and process for making the same Apr. 10, 1990
4868921 High voltage integrated circuit devices electrically isolated from an integrated circuit substrate Sep. 19, 1989
4835416 V.sub.DD load dump protection circuit May. 30, 1989
4801995 Semiconductor device Jan. 31, 1989
4796070 Lateral charge control semiconductor device and method of fabrication Jan. 3, 1989
4764249 Method for producing a coating layer for semiconductor technology and also use of the coating layer Aug. 16, 1988
4757362 High voltage MOS transistor Jul. 12, 1988
4735914 FET for high reverse bias voltage and geometrical design for low on resistance Apr. 5, 1988
4727405 Protective network Feb. 23, 1988
4713681 Structure for high breakdown PN diode with relatively high surface doping Dec. 15, 1987
4695867 Monolithically integrated planar semiconductor arrangement Sep. 22, 1987
4682205 Semiconductor device Jul. 21, 1987
4659979 High voltage current source circuit and method Apr. 21, 1987
4654691 Semiconductor device with field plate Mar. 31, 1987
4649414 PNPN semiconductor switches Mar. 10, 1987
4646115 Semiconductor devices having field-relief regions Feb. 24, 1987
4618875 Darlington transistor circuit Oct. 21, 1986
4614959 Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect Sep. 30, 1986
4599638 Planar semiconductor structure breakdown voltage protection using voltage divider Jul. 8, 1986
4590664 Method of fabricating low noise reference diodes and transistors May. 27, 1986
4553125 High voltage resistance element Nov. 12, 1985
4468686 Field terminating structure Aug. 28, 1984
4443812 High-breakdown-voltage semiconductor device Apr. 17, 1984
4437107 Self-igniting thyristor with a plurality of discrete, field controlled zener diodes Mar. 13, 1984
4429237 High voltage on chip FET driver Jan. 31, 1984

1 2 3 4 5 6 7 8










 
 
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